T20 46 DIODE Search Results

1SS133 T-77

Abstract: T84 5pin
Contextual Info: Introduction Product packaging and availability Leaded diodes on tape Product availability for the leaded diodes is shown in the following tables and is ranked as standard (★), or semi-standard (☆). • Standard (★) means that the part is kept in stock and is readily available.

simple 5.1 home theater circuit diagram with usb port

Contextual Info: high performance low power computing Colibri T20 Datasheet Toradex AG l Altsagenstrasse 5 l 6048 Horw l Switzerland l +41 41 500 48 00 l www.toradex.com l info@toradex.com Colibri T20 Datasheet Page | 2 Revision History Date Doc. Rev. Colibri T20 Version Changes

TE-5001

Abstract: MARKING W16 SOT23 HBM W20 rnx w16 DNA 1002 TVC 2 HB IEEE resistor color code RDA Q20 W16 sot 23 acd marking code
Contextual Info: NETWORKS Resistors / capacitors / diodes 3 THIN FILM ON SILICON TFOS INTEGRATED PASSIVE COMPONENTS KPC 2 1 STRUCTURE 1 2 3 4 5 6 7 Die pad Silicon substrate Circuit Bonding pad Lead Mold resin Gold wire bonding 6 5 4 IDENTIFICATION TYPE COATING COLOR MARKING

marking t17

Abstract: ZENER 89A T29 marking DZ89-C51 T20 MARKING
Contextual Info: Dual Zener Diodes DZ89 Series 800 mW Dual Zener Diodes SOT-89A Plastic Package TA = 25 °C Two Zener diodes with common cathodes in one package. The common cathodes and the two anodes are each connected to a seperate pin. Type Marking Code DZ89-C3V9 DZ89-C4V3

SBA10Q-O4Y

Abstract: 2SK2439 2SJ40 SK2555 FW106
Contextual Info: • Application Examples Synchronous rectifier Mounted Photos Synchronous Rectifier) ■ Electrical Connections ■ SOP8 Guaranteed Source-Wire Fusing Current I d (A.) ■ Device Lineup ♦ Schottky Barrier Diodes Absolute maximum ratings (Ta = 25 C) Package

DZ89-C91

Abstract: c3v9 C82 diode DZ89-C3V9 DZ89-C4V3 DZ89-C4V7 DZ89-C5V1 DZ89-C5V6 DZ89-C6V2 T29 marking
Contextual Info: DZ89. Dual Silicon Planar Zener Diodes 10° The Zener voltages of the types -C3V9 to -C100 are graded according to the international E 24 standard, the Zener voltages of the types -C120 to -C180 are graded according to the international E 12 standard. ! * £

PS-3PF-S4T1-PKL1

Abstract: CT3528 HTD12 PS-10PF-D4T1-PKL1 NEC c157 lcd power board schematic APS 254 CBD49 htd11 CRML08W TEMSV
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: VIS Preliminary VG3664802 4 1(2)AT VG3664162(4)1(2)AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152-word x 8-bit x 4-bank, 4,194,304-word x 8-bit x 2-bank, 1,048,576-word x 16-bit x 4-bank, and 2,097,152-word x 16-bit x 2-bank,

smd glass zener diode color codes

Abstract: KA 511 common anode alphanumeric display 5252 F 1108 ANSI C78.377 2011 F1109 5252 F led D1060 F1060 TLOH16CP H1032
Contextual Info: 2011-3 PRODUCT GUIDE LED Lamps SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g High-Brightness LED Lamps Overview of Toshiba’s Visible LED Lamp Family 1. New Product Digest 1. 2. 3. 4. 5. High-Luminous-Flux White LED Lamps for General Lighting See-Through Type : TL19W01 Series . 4

Contextual Info: VIS Preliminary VG3664802 4 1(2)AT VG3664162(4)1(2)AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152-word x 8-bit x 4-bank, 4,194,304-word x 8-bit x 2-bank, 1,048,576-word x 16-bit x 4-bank, and 2,097,152-word x 16-bit x 2-bank,

dynamic ram binary cell

Contextual Info: VIS Preliminary VG3664321 4 1(2)BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 524,288 - word x 32 - bit x 4 bank, and 1,048,576 - word x 32 - bit x 2 - bank, respectively. lt is fabricated with an advanced

Contextual Info: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

Contextual Info: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

Contextual Info: VIS N Grade 64Mb CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

Contextual Info: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

Contextual Info: VIS Preliminary VG36648041BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 - word x 8-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

Contextual Info: MLL5913 thru MLL5956 Microsemi Corp. ? A-IV/I tub ftotiti experts 1V4 f t SCO rrSD ALE , 4 / h>i im*ie information call (61 2) 941-6300 D E S C R IP T IO N / F E A T U R E S LEADLESS GLASS ZENER DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT TECHNOLOGY • IDEAL FOR HIGH DENSITY MOUNTING

VG36641641

Contextual Info: VIS VG366480 16 41CT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 2,097,152 words x 8 bits x 4 banks and 1,048,576 words x 16 bits x 4 banks, repectively. It is fabricated with an advanced submicron CMOS

dynamic ram binary cell

Abstract: QBA-1 qab1
Contextual Info: VIS Preliminary VG36643241AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 524,288 words x 32 bits x 4 banks. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

VG36641641

Abstract: VG36641641BT
Contextual Info: VIS Preliminary VG36641641BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 1,048,576 - word x 16-bit x 4-bank. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

VG36641641

Abstract: VG36641641BT VG36648041BT vg36644041
Contextual Info: VIS VG36644041BT / VG36648041BT / VG36641641BT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 4,194,304 words x 4 bits x 4 banks, 2,097,152 words x 8 bits x 4 banks and 1,048,576 words x 16 bits x 4 banks, respectively. It is fabricated with

AD8389

Abstract: ADSY8401 adi clx LCD VCOM
Contextual Info: LCD Level Shifters with VCOM, NRS Buffers, and High Voltage Edge Detector ADSY8401 FEATURES Complete suite of level shifters Eight inverting and three complementary level shifters for LCD timing High voltage edge detector Integrated low offset buffer for VCOM drives high capacitive

Contextual Info: LCD Level Shifters with VCOM, NRS Buffers, and High Voltage Edge Detector ADSY8401 FUNCTIONAL BLOCK DIAGRAM FEATURES Complete suite of level shifters Eight inverting and three complementary level shifters for LCD timing High voltage edge detector Integrated low offset buffer for VCOM drives high capacitive

marking t12 sot-23

Abstract: 56z5 BZX84B15LT1 301 marking code sot-23 BZX84C2V4LT1 BZX84C2V7LT1 BZX84CxxxLT1G BZX84C3V3LT1 BZX84C3V6LT1 BZX84C4V3LT1
Contextual Info: BZX84B4V7LT1, BZX84C2V4LT1 Series Zener Voltage Regulators 225 mW SOT-23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT-23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well