T2 DIODE 16 Search Results

13lt 01 g

Abstract: 13lt SUB50P05-13LT
Contextual Info: SUB50P05-13LT Vishay Siliconix P-Channel 55-V D-S MOSFET with Sensing Diode PRODUCT SUMMARY V(BR)DSS (V) –55 rDS(on) (W) ID (A) 0.0135 @ VGS = –10 V –50a 0.019 @ VGS = –4.5 V –50a S D2PAK-5L T1 D1 G D2 T2 1 2 3 4 5 D G D T1 P-Channel MOSFET S T2

Contextual Info: Steering Diode Array-TVS Suppressors CSRS065V0-G/CSRS045V0-G/CSRS085V0-G Working Voltage: 5Volts RoHS Device Features SO T2 SO 36 -Fast Reverse Recovery Time. -Fast Turn on Time. -Low Capacitance SMD Packages. -16kV IEC61000-4-2 capable. 14 IC SO 3 -8 SOT-23-6

6R SMD MARKING CODE

Abstract: NXP PESD2CAN
Contextual Info: SO T2 3 PESD2CAN CAN bus ESD protection diode Rev. 2 — 27 September 2012 Product data sheet 1. Product profile 1.1 General description PESD2CAN in a small SOT23 Surface-Mounted Device SMD plastic package designed to protect two automotive Controller Area Network (CAN) bus lines from the damage

c125t

Abstract: C1303 C2090 MCT270
Contextual Info: "û fl d e T I 3 0 ^ 0 1 5 0 O O O a iT S t - H GENERAL M I - 8 3 PHOTOTRANSISTOR OPTOCOUPLER INSTRUMENT MCT270 PACKAGE DIMENSIONS D ESCRIPTION The M C T2 7 0 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN

DS0137

Contextual Info: & FEATURES • 2 0 -4 0 0 MHz ■ Small 16 Pin DIP ■ Low Cost MODEL NO. DS0137 PIN Diode SP7T ■ Low Current Consumption RF1 3 RF2 1 RF3 16 Ò Ò Ó 15 CONTI CO N T2 CO N T3 RF4 14 RF5 RF6 RF7 12 10 8 Ó Ô CO N T6 CO N T 7 Ó Ò Ò 13 CO N T4 SP7T 5 11

Contextual Info: FEATURES . J CEr 2 0 - 4 0 0 MHz • Small 16 Pin DIP MODEL NO. DS0137 ■ Low Cost PIN Diode SP7T ■ Low Current Consumption SP7T RF1 3 RF2 RF3 16 RF4 14 RF5 1 CO N TI CO N T2 CO N T3 CO N T4 CONT 5 RF6 12 10 CO N T6 CO N T7 6 GND RF COM .X X .X X X = .02

PC817 zener diode

Abstract: diode zener 1N4148 BC337 pc817 PC817 PIn L5991 C6 PC817 15V zener PC817 STP10NK60Z con20A
Contextual Info: 5 3 1 T2 T3 10mH D1 2 4 100n + 2 1 10 C3 220u D3 D2 STPS30H100 C4 4.7n R1 3 NTC - 16 +9V TRNSFMR PLT20 C2 t 1 4 C18 100n 100n D 3 T1 20mH 4 C1 2 3 2.5A FUSE N 2 DIODE BRIDGE F1 1 F 4 D L2 1 33K C19 2 47uH 1n C5 220u 14 D4 Q1 STX715 1N4148 R19 C6 220u R20 100

Contextual Info: V23990-K239-F-PM MiniSKiiP 2 PACK 1200V/50A MiniSKiiP® 2 housing Features ● Solder less interconnection ● Designed for motor drives up to 7 kW ● Temperature sensor ● Standard 6.5mm and thin (2.8mm) lids,16mm housing ● Optional with pre-applied thermal grease

Contextual Info: KSM10N50CF/KSMF10N50CF 500V N-Channel MOSFET Features TO-220F TO-220 • 10A, 500V, RDS on = 0.61 Ω @VGS = 10 V • Low gate charge (typical 43 nC) • Low Crss (typical 16pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode

fire alarm with 8085

Contextual Info: AQY212GS.fm1 y [ W Q O O Q N U S œ @ ˛ j œ @ ª P Q Q U “ GU General Use Type SOP Series 1-Channel (Form A) High Capacity 4-Pin Type 4.3 .169 4.4 .173 2.1 .083 mm inch 1 4 2 3 cUL VDE pending pending PhotoMOS RELAYS FEATURES TYPICAL APPLICATIONS 1. Greatly increased load current in the

Contextual Info: RGT40NS65D Data Sheet 650V 20A Field Stop Trench IGBT lOutline VCES 650V IC 100°C 20A VCE(sat) (Typ.) 1.65V PD 161W lFeatures LPDS (TO-263S) (2) (1) (3) lInner Circuit 1) Low Collector - Emitter Saturation Voltage (2) (1) Gate (2) Collector (3) Emitter 2) Low Switching Loss

si9950

Abstract: Si9950DY Si9948DY SI9945 Si9945DY
Contextual Info: Si9950DY Complementary MOSFET Half-Bridge Product Summary VDS V N- or P-Channel 50 rDS(on) (W) ID (A) 0.3 @ VGS = 10 V "2.0 1.0 @ VGS = 5 V "1.2 Alternate Solution: one Si9948DY and one Si9945DY V+ V+ SO-16 GND 1 16 GND OUTPUT 2 15 OUTPUT OUTPUT 3 14 OUTPUT

wiring diagram electric

Abstract: AQS225S AQS225SX AQS225SZ AQS225
Contextual Info: PhotoMOS RELAYS RF Radio Frequency Type SOP Series 4-Channel (Form A) 16-pin Type FEATURES 4.4 .173 2.1 .083 10.37 .408 mm inch The capacitance between output terminals is small, typically 4.5pF. This enables for a fast operation speed of 0.1ms(typ.). 5. Low-level off state leakage current

SI9950DY

Abstract: si9950 6V25V SI9945 Si9948DY Si9945DY
Contextual Info: Si9950DY Complementary MOSFET Half-Bridge Product Summary VDS V N- or P-Channel 50 rDS(on) (W) ID (A) 0.3 @ VGS = 10 V "2.0 1.0 @ VGS = 5 V "1.2 Alternate Solution: one Si9948DY and one Si9945DY V+ V+ SO-16 GND 1 16 GND OUTPUT 2 15 OUTPUT OUTPUT 3 14 OUTPUT

STU314D

Abstract: A47-16 4716B
Contextual Info: STU314D Green Product S a mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor N and P Channel PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) R DS(ON) (m Ω) Max V DSS ID 30V 16A V DSS ID -30V -14A R DS(ON) (m Ω) Max

ac dc distribution boards diagram

Abstract: IC 8085 pin diagram IR LED infrared led AQY221N2S AQY221N2SX AQY221N2SZ
Contextual Info: RF Radio Frequency C (by) x R 10 Type FEATURES 4.3±0.2 .169±.008 1. In addition to lower output capacitance between terminals than ever before, the PhotoMOS relay achieves low ON-resistance. Output capacitance(C): 1.0pF (typ.) ON resistance(R): 9.5Ω (typ.)

STB416D

Contextual Info: STB416D Green Product S a mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor N and P Channel PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) R DS(ON) (m Ω) Max V DSS ID 40V 18A 28 43 V DSS ID -40V -16A R DS(ON) (m Ω) Max

Contextual Info: FDD1600N10ALZD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 6.8 A, 160 mΩ Features Description • RDS(on) = 124 mΩ (Typ.) @ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior

Contextual Info: FDD1600N10ALZD BoostPak N-Channel PowerTrench MOSFET + Diode 100 V, 6.8 A, 160 mΩ Features Description • RDS(on) = 124 mΩ ( Typ.)@ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching

Contextual Info: CED4060AL/CEU4060AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 16A, RDS ON = 75mΩ @VGS = 10V. RDS(ON) = 90mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

CEM3128

Contextual Info: CEM3128 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 9A, RDS ON = 16mΩ @VGS = 10V. RDS(ON) = 23mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

CEM8809

Contextual Info: CEM8809 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 16A, RDS ON = 6.2mΩ @VGS = 10V. RDS(ON) = 9 mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.

Contextual Info: FCP16N60N / FCPF16N60NT N-Channel SupreMOS MOSFET 600 V, 16 A, 199 mΩ Features Description • RDS on = 170 mΩ (Typ.) @ VGS = 10 V, ID = 8 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology

E78240

Abstract: EM X100 M6 CD61 CD611616A CS61 K1 module powerex cd61
Contextual Info: CD61_16A CN61 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 OUTLINE DRAWING B F G 1 2 TM POW-R-BLOK Dual/Single Diode Isolated Modules Up to 165 Amperes & 1600 Volts Powerex Dual Diode & Single Diode Modules are designed for use in