T1P TRANSISTOR Search Results

RT1N234X

Abstract: RT1P234C RT1P234M RT1P234T2 RT1P234U RT1P234X
Contextual Info: T r a n s is to r RT1P234X SERIES Transistor With Resistor For Switching Application Silicon PNP Epitaxial Type DESCRIPTION HT1P234X is a OUTLINE one chip transistor RT1P234U with built-in bias resistor.NPN type Is RT1N234X UNIT mm DRAWING R T1P 234C 23

RT1N231X

Abstract: RT1P231C RT1P231M RT1P231S RT1P231T2 RT1P231U RT1P231X
Contextual Info: T r a n s is to r RT1P231X SERIES Transistor WïUi Resistor For Switching Application Silicon PNP Epitaxial Type OUT Li ME DESCRIPTION RT1P231X is a öriä chip transistor DRAWING RT1PÍ31U with built-in bias resistor.NPN type Is RT1N231X UNIT: mm R T1P 231C

RT1N434X

Abstract: RT1P434M RT1P434S TRANSISTOR 1J5 RT1P434C RT1P434T2
Contextual Info: R T - I P434X SERIES For Switching Application Silicon PNP Epitaxial Type DESCRIPTION HT1P434X is OUTLINE ä one chip transistor UNIT mm DRAWING R T1P 434C RT1P434U with b u ilt-in bias resistor.NPN type Is RT1N434X „ L5 0.35 0.$ 2 fl 03: 0JE5 15 Í.5& FEATURE

RT1P430M

Abstract: RT1N430X RT1P430C RT1P430S RT1P430U RT1P430X 10QW
Contextual Info: RT1P430X SERIES Tr, „ J 7" * For S w itch in g A pp lica tio n Silicon PNP Epitaxial Type DESCRIPTION HT1P430X is OUTLINE s one chip transistor w ith b u ilt-in bias resistor.N P N ty p e is RT1N430X UNIT m m DRAWING RT1P430U R T1P 430C 2£ OJS 5 l£ -

RT1P240T2

Abstract: RT1P240C 043B RT1N240X RT1P240M RT1P240S RT1P240U RT1P240X
Contextual Info: R T1P240X SERIES Tr, „ J 7" * F u r S w it c h in g A p p lic a tio n Silicon PNP Epitaxial T ype DESCRIPTION RT1P240X is a OUTLINE one chip transistor DRAWING U N IT m m RT1P240U with b u ilt-ir bias resistor.NPN type is RT1N240X R T1P 240C 2fl „ _ 1J5

P436X

Abstract: RT1N436X RT1P436C RT1P436M RT1P436S RT1P436T2 RT1P436U RT1P436X RT1P436
Contextual Info: R T1P 436X SERIES For S w itch in g A pp lica tio n Silicon PNP Epitaxial Type DESCRIPTION HT1P436X is OUTLINE s one chip tra n s is to r RT1P436U with built-in bias resistor.NPN type is RT1N436X UNIT m m DRAWING RT1P4M C 1+ M¡ 1.5 *1 0.6 J *- - V

ss125 transistor

Abstract: SS125 transistor WLM RT1N15BX RT1P15BC RT1P15BM RT1P15BU RT1P15BX TC236
Contextual Info: Transistor R T 1 P 1 5 B X S E R IE S Transi stor WïUi Resistor For Switching Application Silicon PNP Epitaxial Type OUT Li ME DESCRIPTION RT1P15BX is a one chip transistor RT1P15SC RT1P15BU with built-in bias resistor.NPN type is RT1N15BX UNIT: mm DRAWING

t06 marking sot23

Abstract: BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23
Contextual Info: Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER PACKAGE MARKING CODE PACKAGE 2PA1576Q FtQ SC-70 BC808W 5Ht SOT323 2PA1576R FtR SC-70 BC808-16 5Ep SOT23 2PA1576S FtS SC-70 BC808-16W

AN2521

Abstract: resolver sensor MPC500 HALL SENSOR
Contextual Info: Freescale Semiconductor, Inc. Application Note AN2521/D Rev.0 , 5/2003 BLDC Motor version II TPU Function Set BLDC Freescale Semiconductor, Inc. By Milan Brejl, Ph.D. Functional Overview BLDC Motor version II (BLDC) is an alternative realization of the algorithm

resolver sensor

Abstract: MPC500
Contextual Info: Freescale Semiconductor, Inc. Application Note AN2520/D Rev. 0, 5/2003 BLDC Motor version I TPU Function Set BLDCm Freescale Semiconductor, Inc. By Milan Brejl, Ph.D. Functional Overview BLDC Motor version I (BLDCm) TPU function drives a Brush less DC Motor by

BFR53

Abstract: transistor 1061 transistor h 1061
Contextual Info: • 1.1,S3 S 31 00251Mb MS3 H A P X Philips Semiconductors Product specification AflER P H I L I P S / D I S C R E T E b7E D NPN 2 GHz wideband transistor DESCRIPTION BFR53 PINNING NPN transistor in a plastic SOT23 envelope. It is intended for application In thick and thin-film

MOSFET ior 144

Contextual Info: International [ 3 Rectifier Provisional Data Sheet No. PD 9.1286 IRFY1 3 0 CM HEXFET POWER MOSFET : : Description N -C H A N N E L Product Summary HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very

RT1P431C

Abstract: RT1P431M RT1P431S RT1P431U RT1P431X
Contextual Info: S e m ic o n d u c t o r T r a n s is to r R T 1 P 4 3 1 X S E R IE S Transistor WïUi Resistor For Switching Application Silicon PNP Epitaxial Type OUTLINE DESCRIPTION HT1P431X is a o n e c h ip t r a n s is t o r UNIT mm DRAWING RT1P431U with b u ilt-in bias resistor.NPN type is RT1N431X

marking A4t sot23

Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM15HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM15HA-H Collector current. . 15A • V c e x Collector-emitter voltage. . 600V • hFE DC current gain. . 75 • Insulated Type

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

Contextual Info: mUERCX POUEREX INC 3TE T> m 72T4b21 000424Q b *P R X T -3 3 -3 S - KD4212Í0HB Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 High-Beta Dual Darlington

TRANSISTOR t1p

Abstract: BCX17 BCX18 BCX19 BCX20 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BCX17; BCX18 PNP general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Feb 28 Philips Semiconductors Product specification PNP general purpose transistors

transistor B 764

Abstract: P1D8 179502 P3003 T1P3003028-SP 012673 0823838
Contextual Info: TriQuint It TM PO W ER B A N D SEMICONDUCTOR T1P3003028-SP 30W, 28V, 500 MHz-2 GHz, Pulsed, Powerband pHEMT RF Power Transistor Introduction The T1P3003028-SP is a POWERBAND™ discrete pHEMT, depletion mode RF Power Transistor designed to operate from 500MHz to 2GHz in wide-band circuits.

RT1P432S

Abstract: RT1N432X RT1P432C RT1P432M RT1P432T2 RT1P432U RT1P432X VH-TW DJB 1
Contextual Info: RT1P432X SERIES For Switching Application Silicon PNP Epitaxial Type DESCRIPTION HT1P432X is OUTLINE ä one chip tra n s is to r UNIT mm DRAWING RT1P432U with b u ilt-ir bias resistor.NPN type is RT1N432X RT1P4Î2C l+ 0£5 1.5 * - - V FEATURE

RT1P144M

Abstract: RTIN44IU
Contextual Info: # T r a n s is to r w ith R e g is te r H igh d e n s ity m o u n tin g ty p e (C o n tin u e d ) Max. ratines Type No. m R TIW M U* LSS HTIPIUU * ★ LSS RTIN230U* LSS RTIP430U ★ * LSS s RTIN630U * * LSS s ,N P N , E RT1P140U ★ * LSS s R TIH U IU *

GRM188B11E104KA

Abstract: GRM219B31E684KA88D BD5426EFS 7G09B-220M HTSSOP-A44 GRM188R11H104KA93 GRM21BB31E GRM21BB11C105KA grm188r11h 7G09B
Contextual Info: Middle Power Class-D Speaker Amplifiers Analog Input / BTL Output Class-D Speaker Amplifier No.10075EBT05 BD5426EFS ●Description BD5426EFS is a 10W + 10W stereo class-D power amplifier IC, developed for space-saving and low heat-generation applications such as low-profile TV sets. The IC employs state-of-the-art Bipolar, CMOS, and DMOS BCD process

HTSSOP-A44

Abstract: ic audio 5w 8 pin RUBYCON CAPACITOR 220M BD5426EFS GRM188R11H104KA93 GRM219B31E684KA88D
Contextual Info: High Performance Class-D Speaker Amplifier Series 10W+10W Class-D Speaker Amplifier for Analog Input No.09075EAT05 BD5426EFS ●Overview BD5426EFS is a 10W + 10W stereo class-D power amplifier IC, developed for space-saving and low heat-generation applications such as low-profile TV sets. The IC employs state-of-the-art Bipolar, CMOS, and DMOS BCD process