T1651 Search Results

T1651N

Contextual Info: Technische Information / technical information Netz-Thyristor Phase Control Thyristor T1651N Key Parameters enndaten VDRM / VRRM 6000V … 7000V ITAVM 1670A TC=85°C ITSM vT0 50000A 3570A (TC=55°C) 1,22V rT 0,477mΩ RthJC 7,0K/kW Clamping Force 45 … 65kN

6k11

Abstract: T1651 ET-T1651 12by general electric
Contextual Info: 6K11 ET-T1651 6K11 Page 1 12-60 THREE-SECTION TRIODE ^TU BES DESCRIPTION AND RATING The 6K11 is a COMPACTRON device containing two high-mu triodes and one medium-mu triode. Features of the tube includeseparate pin connections for all three cathodes, grids, and plates; an internal shield between sections 1

Contextual Info: h iA R R is T16511T, CD74FCT162511T S E M I C O N D U C T O R Fast CMOS 16-Bit Registered/Latched Transceiver with Parity November 1996 Features Description • These Devices are High-speed, Low Power Devices with High Current Drive H arris’ C T16511T and C D74FCT162511T are pro­

Contextual Info: S C S e m ico n d ucto r C D D 7 7 4 4 F F C C T T 1 6 1 6 5 2 1 1 5 1 T 7, 1 T Fast CMOS 16-Bit Registered/Latched Transceivers with Parity December 1996 Features Description • These Devices are High-speed, Low Power Devices with High Current Drive H arris’ C T16511T and C D74FCT162511T are pro­

BLY25

Abstract: BLY26 CP430 B3631 2SC736 B145013 BUY14 B3547 T0111
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT

FS300R12OE4P

Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
Contextual Info: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in

T1081N

Abstract: T553N eupec igbt EUPEC T1503N kuka-2003-inhalt.qxd T2351N T2563 T1049 T1601 T1869N
Contextual Info: kuka-2003-inhalt.qxd 24.04.2003 IGBT 10:22 Uhr Seite 34 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 34 Overview Phase Control Thyristors in Disc Housings VDRM - Concept 8000 V T201N 7000 V 5200 V 5000 V 4800 V T501N T551N T553N

FS20R06XE3

Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
Contextual Info: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors

Contextual Info: h iA R R is C D 7 4 F C T 1 6 5 1 1 T, S E M I C O N D U C T O R C D 7 4 F C T 1 6 2 5 1 1 T Fast CMOS 16-Bit Registered/Latched Transceiver with Parity December 1996 Features Description • These Devices are High-speed, Low Power Devices with High Current Drive

EUPEC Thyristor

Abstract: Eupec Power Semiconductors rectifire diode rectifire D2601N T4301N d911sh design sine wave power inverter T1601 D1481N
Contextual Info: Application Note Date: 11.04.2005 AN-Number: AN2004-04 Page 1 Department:SM PHP Case non rupture current High power Semiconductors DIN IEC 60 747 – 2 Diodes and DIN IEC 747 – 6 (Thyristors) The case non rupture current is the current value by which the housing neither