T15J Search Results

T15J10

Contextual Info: 2SB1285 T15J10 PNP4f—lJ > h > h 7 > v X # / P N P Darlington Transistor Outline Dimensions Equivalent Circuit C ase : M T 0 -3 P Absolute Max. Ratings • m ■■ ■./•' Item \ ,ie 5t ■S y m b o l s S to r a g e T e m p e r a tu r e J u n c ti o n T e m p e r a tu r e

MG150N2YS40

Abstract: MG100J2YS45 mg75j2ys40 MG150J2YS40 MG15N6ES42 MG100G2YS1 mg75n2ys40 mg25n2ys40 MG200J2YS40 MG50J6ES40
Contextual Info: Connection Maximum Bating VCES V ICÌAÌ 8 15 25 G T15J101* eoo G T8J101* G T8J102(SM )* G T15J102* T15J103(SMJ* 50 75 G T60J101* <60A) G T 80J101* GT50J1Û2+ (80A) M G 50 J1B S 1 1 MG75J1SB11 100 150 200 300 400 500 G T50J101* Q T25J101* MG25J1BS11 MG100J1BS11 MG150J1BS11

Contextual Info: TOSHIBA T15J311,G T15J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT T15J311, T15J311(SM) U n it in mm HIGH PO W ER SWITCHING APPLICATIONS T15J311 MOTOR CONTROL APPLICATIONS The 3rd G eneration Enhancem ent-Mode H ig h Speed

2SB1285

Abstract: T15J10
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1285 Case : MTO-3P T15J10 Unit : mm -15A PNP RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

22a ic

Abstract: soa 01 2SB1285 T15J10
Contextual Info: SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1285 Case : MTO-3P T15J10 Unit : mm -15A PNP RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

kjd1

Abstract: t17c marking T18C UT63M125 application notes 1553B F801 UT1553B T16B 3F6 smd smd 3F9
Contextual Info: UT1553B RTR Remote Terminal with RAM FEATURES ❐ Complete MIL-STD-1553B remote terminal interface ❐ 1K x 16 of on-chip static RAM for message data, completely accessible to host ❐ Self-test capability, including continuous loop-back ❐ ❐ ❐ ❐ MCSA 4:0

T13G

Abstract: T18E t12j A6211 RTS-34 t18f 63M125 t17j UT176 RTS-28
Contextual Info: UTI760A RTS Remote Terminal for Stores FEATURES ❐ Complete MIL-STD-1760A Notice I through III ❐ ❐ ❐ ❐ ❐ ❐ ❐ remote terminal interface 1K x 16 of on-chip static RAM for message data, completely accessible to host Self-test capability, including continuous loop-back

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

j2y transistor

Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Contextual Info: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,

RTS34

Abstract: RTS20 kjd1 t17c SMD MARKING CODE k11 F801 UTI760A MIL-STD-1760A smd 3F9 marking code T16A
Contextual Info: UTI760A RTS Remote Terminal for Stores FEATURES ❐ Complete MIL-STD-1760A Notice I through III ❐ ❐ ❐ ❐ ❐ ❐ ❐ remote terminal interface 1K x 16 of on-chip static RAM for message data, completely accessible to host Self-test capability, including continuous loop-back

1553b rti

Abstract: marking t11g kjd1 t17c UT63M125 application notes T10E T19G UT1553B marking 43F T11G
Contextual Info: UT1553B RTI Remote Terminal Interface FEATURES ❐ Operational status available via dedicated lines or ❐ Complete MIL-STD-1553B Remote Terminal ❐ ASD/ENASC formerly SEAFAC tested and approved ❐ Available in ceramic 84-lead leadless chip carrier and

MG30H1BL1

Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
Contextual Info: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX

1553B

Abstract: F801 UT1553B 63M125 1553b rti t17c
Contextual Info: UT1553B RTR Remote Terminal with RAM FEATURES ❐ Complete MIL-STD-1553B remote terminal interface ❐ 1K x 16 of on-chip static RAM for message data, completely accessible to host ❐ Self-test capability, including continuous loop-back ❐ ❐ ❐ ❐ MCSA 4:0

MG100g2ys1

Abstract: mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1
Contextual Info: SUMMARY OF POWER MOS FET BY APPLICATIONS Applications of the Toshiba power MOS FETs are gouped to their rated voltages and currents as shown below. POWER MOS FET FAMILIES Q tt-MOS Series Standard ^-M OS family gained outstanding polurarity in the market Q tt-MOS II Series

UT1553B

Abstract: Biphase space decoder 144 pin pga
Contextual Info: UT1553B RTI Remote Terminal Interface FEATURES ❐ Operational status available via dedicated lines or ❐ Complete MIL-STD-1553B Remote Terminal ❐ ASD/ENASC formerly SEAFAC tested and approved ❐ Available in ceramic 84-lead leadless chip carrier and

TH3L10

Abstract: TK3L10 TH3L10 ic 2SA1679 T7K40 TH3L10 Z 2SD1788 2SC4148 TP10S4 TP10T4
Contextual Info: POWER TRANSISTORS SHINDENGEN ELECTRIC MFG • 021= 1307 0 0 0 0 0 2 1 ISHE J G to r Induction C o o k e t^ a aa * é ä Absolute Maximum Ratings E IA J Type No. No. — — 1 i M a £ V o bo *-T30G 40 VCEO V eb o Ic Ib PT [V ] [V ] [V ] [A ] [A ] [W ] 800

T10E

Abstract: t15j T18C T17C UT1553B
Contextual Info: UT1553B RTI Remote Terminal Interface FEATURES ❐ Operational status available via dedicated lines or ❐ Complete MIL-STD-1553B Remote Terminal ❐ ASD/ENASC formerly SEAFAC tested and approved ❐ Available in ceramic 84-lead leadless chip carrier and