T080 Search Results

hy62kt081e

Abstract: HY62VT08081E-DPC
Contextual Info: HY62K U,V T08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 2.7~3.3V / 3.0~3.6V / 2.7~3.6V Low Power Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Merged 3.0V/3.3V SPEC Jan.20.2000 Final 01 Revised - Marking Information Change : SOP Type

Contextual Info: HY62W T08081E Series 32K x8b it CMOS SRAM DESCRIPTION The T08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hyundai's high performance CMOS process technology. It Is suitable for use in low voltage operation and

SSO24

Abstract: T0800 ld1615
Contextual Info: T0800 5-Channnel Laser Driver with RF Oscillator and 2 Outputs Description The T0800 is a laser diode driver for the operation of two different, grounded laser diodes for DVD–RAM 650 nm and CD–RW (780 nm). It includes five channels for five different optical power levels which are controlled by a

T4302G

Contextual Info: V1.1 PART NO. CIRCUITS S P H d800-P t0102G f-0254-P S P H d800-P t0202G f-0254-P S P H d800-P t0302G f-0254-P S P H d800-P t0402G f-0254-P S P H d800-P t0502G f-0254-P S P H d800-P t0602G f-0254-P S P H d800-P t0702G f-0254-P S P H d800-P t0802G f-0254-P S P H d800-P t0902G f-0254-P

Contextual Info: WESTCODE An Date:- 14 July, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0800TB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.

1N4148

Abstract: PT3868 D0802 D0803 PT3877 C0804 1N4148 D0805 1n4148 t4 connector db15 equivalent components of 1N4148
Contextual Info: 1 2 3 4 5 6 7 8 A A 17 T0801 CLSN+ TRMT- 5 3 6 4 8 14 TRMT+ RCV- 7 2 11 CLSN- 1 RCV+ 1 1 T12 T7 T2 T11 T10 T15 T1 T16 T13 T9 12 13 9 RXDRXD+ 10 15 16 PE64104 F0801 TD~ 1 R0811 2 S1 S2 S3 S4 16 14 11 9 TD1 TD1~ RD1 RD1~ 1 R0812 2 15 10 7 G1 1 1 1 1 1 D0808

T0800EB

Abstract: 2008AN01 T0800 transistor P1 P 12 T0800EB45G MAR 208 transistor
Contextual Info: WESTCODE An Date:- 23 Dec, 2010 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0800EB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.

Contextual Info: T0805xH T0809xH  SENSITIVE GATE TRIACS FEATURES IT RMS = 8A VDRM = 400V to 800V IGT ≤ 5mA to ≤ 10mA A1 A2 G DESCRIPTION The T08xxxH series of triacs uses a high performance MESA GLASS technology. These parts are intended for general purpose applications where gate high sensitivity is

T0800TB45E

Abstract: T0800 D-68623 S200N d686 IGBT 800 cr 406 transistor E0900NC45C
Contextual Info: WESTCODE An Date:- 14 July, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0800TB45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.

Contextual Info: WESTCODE An Date:- 3 March, 2012 Data Sheet Issue: - 1 IXYS Company Insulated Gate Bi-Polar Transistor Type T0800EB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.

Contextual Info: V1.1 PART NO. CIRCUITS SPH d900-Pt010 2 G f-0 3 0 0 -P SPH d900-P t0202G f-0300-P SPH d900-P t0302G f-0300-P SPH d900-P t0402G f-0300-P SPH d900-P t0502G f-0300-P SPH d900-P t0602G f-0300-P SPH d900-P t0702G f-0300-P SPH d900-P t0802G f-0300-P SPH d900-P t0902G f-0300-P

HY62KT08081E-C

Abstract: HY62KT08081E-E HY62KT08081E-I HY62UT08081E-C HY62UT08081E-E HY62VT08081E-C HY62VT08081E-E HY62VT08081E-I t0808
Contextual Info: HY62K U,V T08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 2.7~3.3V / 3.0~3.6V / 2.7~3.6V Low Power Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Merged 3.0V/3.3V SPEC Jan.20.2000 Final 01 Revised - Marking Information Change : SOP Type

Contextual Info: T0800 5-Channnel Laser Driver with RF Oscillator and 2 Outputs Description The T0800 is a laser diode driver for the operation of two different, grounded laser diodes for DVD–RAM 650 nm and CD–RW (780 nm). It includes five channels for five different optical power levels which are controlled by a

Contextual Info: / I T SGS-THOMSON Ä 7# MÛIMSieratâMCS T0805xH T0809xH SENSITIVE GATE TRIACS FEATURES • It rms = 8A > VDrm= 400V to 800V ■ lQ i^5m A to^ 10mA DESCRIPTION T0220 non-insulated (Plastic) The T08xxxH series of triacs uses a high performance MESA GLASS technology. These

Contextual Info: T0800 5-Channnel Laser Driver with RF Oscillator and 2 Outputs Description The T0800 is a laser diode driver for the operation of two different, grounded laser diodes for DVD–RAM 650 nm and CD–RW (780 nm). It includes five channels for five different optical power levels which are controlled by a

Y62VT

Abstract: ATA 2388
Contextual Info: HY62K U.V T08081 E Series 32K x 8 b it C M O S SRAM FEATURES The HY62K(U,V)T08081 E is a high-speed, low power and 32,786 X 8-bits CM O S Static Random Access Memory fabricated using Hyundai's high performance CM OS process technology. It is suitable for use in low voltage operation and

IC500A

Abstract: t0800ta45e D-68623 T0800 transistor D 982
Contextual Info: Date:- 14 Dec, 2005 Data Sheet Issue:- 1 Provisional Data Insulated Gate Bi-Polar Transistor Type T0800TA45E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate

T0800EB

Contextual Info: WESTCODE An Date:- 3 March, 2012 Data Sheet Issue: - 1 IXYS Company Insulated Gate Bi-Polar Transistor Type T0800EB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.

SML-LXT0805IW-TR

Contextual Info: PART NUMBER REV. SM L-LX T0805IW -TR E UNCONTROLLED DOCUMENT 2.00 [0.079] - REV. CATHDDE MARK El 1.40 [0 ,05 5 ] A B 1.25 E0.049] 1,30 [0,051] E.C.N. NUMBER AND REVISION COMMENTS E.C.N. # 1 0 5 6 7. 12.B.99 1.8.01 C E.C.N. # 1 0 6 9 5. E.C.N. # 1 0 8 1 4 .

Contextual Info: UNCONTROLLED DOCUMENT 2.00 [0 .07 9 ] CATHDDE 1.40 [0 ,05 5 ] REV. MARK El PA R T N U M B E R REV. SM L-LX T0805S G W -TR B E.C.N. N U M B E R AN D R E V ISIO N C O M M EN TS DATE A E.C.N. # 1 0 5 6 7 . 12 .B.99 B E.C.N. # 1 0 6 9 5 . 1.8.01 1.25 E0.049] ELECTRO-OPTICAL CHARACTERISTICS Ta =25‘C

SML-LXT0805SIW-TR

Contextual Info: PART NUMBER REV. S M L-LX T0805S IW —TR c UNCONTROLLED DOCUMENT 2.00 [0.079] - REV. A B C CATHODE MARK 1.40 [0.055] 1.25 [0.049] E.C.N. E.C.N. E.C.N. E.C.N. NUMBER AND REVISION COMMENTS #10967. #11248. #11508. ELECTRO-OPTICAL CHARACTERISTICS Ta = 25'C 1.30 [0.051]

T080

Contextual Info: t080 Johnson Drive Buffalo Grove, IL 60089 C M h ic a g o in ia t u r e 708-459-3400 Fax 708-459-2708 WHERE INNOVATION COMES TO LIGHT F l a t Top C y l i n d r i c a l LE D L a m p s D E S C R I P T I O N A N D F E A T U R E S These flat top cylindrical LED lamps are tinted

Contextual Info: STI644004UD1-60VG 168-PIN DIMMS 4M X 64 Bit DRAM DIM M with EDO and without Buffers FEATURES • GENERAL DESCRIPTION Performance range: ^RAC I ^CAC 60ns 15ns I rC ^HPC 104ns 25ns The Simple Technology STI644004UD1-60VG is a 4M x 64 bit Dynamic RAM high density memory module. The Simple

Contextual Info: ALLEN A V I O N I C S INC S l4E ALLEN AVIONICS, INC. G5DSfl3fl 0 0 0 0 ^ 5 1 D7fl T> DIL 14 PIN SINGLE OUTPUT 3T DIL 14 PIN TRIPLE OUTPUT MECHANIC: SPECIFICATIONS: ‘ Operating temperature range 0 "C to + 70"C -55 °C to +125°C on request . • Supply voltage:5.0 ± 0.25VDC.