T033 Search Results

Contextual Info: t tecl1 InNET TECHNOLOGIES T0335S Electrical E L E C T R IC A L S P E C IF IC A T IO N S REV. 02 TURNS RATIO : 1 - 1 0 :2 - 9 :4 - 7 :5 - 6 1 : 1 : 1 : 1 ±3 % INDUCTANCE: 1 -1 0 = 2 -9 = 4 -7 = 5 -6 3.3 mH MIN. @ 0.01V, 100KHz 4.7 mH MIN. @ 0.01V, 100KHz

DCF1900-T0330

Contextual Info: DCF Drop-in Isolators & Circulators DCF1900-T0330 3.6 GHz to 4.3 GHz Specifications RF Frequency Isolation Insertion Loss VSWR Peak Power Average Power Power Forward Power Reverse Package Size 3.6 GHz to 4.3 GHz 20 dB min 0.4 dB (max) 1.25:1 100 Watts (max)

DCF1900-T0330

Contextual Info: DCF Drop-in Isolators & Circulators DCF1900-T0330 3.6GHz to 4.3GHz Specifications RF Frequency Isolation Insertion Loss VSWR Peak Power Average Power Power Forward Power Reverse Package Size 3.6GHz to 4.3GHz 20 dB min 0.4 dB (max) 1.25:1 100 Watts (max)

2DLF

Contextual Info: MIS DRAtflWÔ IS UNPUBLISHED. ftEVtSIONS AD 39 , r REV PER ECN 0010-0187-92 REV PER 0010-1752-93 T EC 0010-1601-95 A - i 03329-0 3 - i 0 3 3 2 9 -9 3 - i 0 3 3 2 9 -9 .025 ¿ .001 3-T03329-5 3 - i 0 3 3 2 9 -4 3 - i 0 3 3 2 9 -3 3 - i 0 3 3 2 9 -2 T Y P -i

L0252

Contextual Info: InNET TECHNOLOGIES t e c ll n o ^ ^ e j j T0339S 3 t Electrical (REV. X E L E C T R IC A L S P E C IF IC A T IO N S TURNS RATIO: (T X IN + )—(CTIN)—CTXIN—) : (T X O + ) -(C T O ) -(T X O -) 1CT : 1CT ± 3% (RXO+)—(RXO—) : (RXIN+)—(RXIN—) 1 : 1 ± 3%

Contextual Info: InN ET TE C H N O LO G IE S technologies 6 T0332S 1 WEBSITE innet-tech.com NORTH AMERICA tel 858-578-8094 ftx 858-578-5762 E-MAIL innel@mnet-tech.com HONG KONG tel 852-2690-1049 fix 852-2687-6441 CHINA tel 86-769-229-2901 ftx 86-769-225-0747

KHs-17D11-24

Abstract: potter and brumfield khs 17D11 potter and brumfield khs PB122-ND KHS-17D12-24 PB322-ND PB117-ND K10P-11D15-24 KHS-17A11-120 KUP-11A15-120
Contextual Info: * All relays are UL, CSA approved PC Mount and General Purpose Relays 10 10 Fig. 3 — K10 Series Fig. 2 — RE Series Fig. 1 — PE Series 28.17 19.99 19.99 42.72 21.84 21.69 A1 + S 11 14 34.93 A2 Ø1.3 10.59 1 3 2 4 5 6 A B 1 3 5 43.69 27.61 S+ ø1.3 10

Contextual Info: ADS5560 ADS5562 www.ti.com . SLWS207 – MAY 2008 16-BIT, 40/80 MSPS ADCs WITH DDR LVDS/CMOS OUTPUTS

M7707

Abstract: rd201 PLD-10 imv D6-11 BV 726 C 1 Converter w5753 fd187 sGCT function PR 161A RD202
Contextual Info: O K I Semiconductor MSM7707 Baseband integration LSI device for PHS GENERAL DESCRIPTION The MSM7707 is an LSI device with an ADPCM CODEC function, jt/4 shift QPSK modulation/ demodulation function and a TDMA-TDD function required for PHS Personal Handy phone

100-BT

Contextual Info: TLK100 www.ti.com SLLS931B – AUGUST 2009 – REVISED DECEMBER 2009 Industrial Temp, Single Port 10/100 Mb/s Ethernet Physical Layer Transceiver Check for Samples: TLK100 1 Introduction 1.1 Features 1 • • • • • • • • • • • • Temperature From –40°C to 85°C

b0350

Abstract: AZ62P48 ADS62P48IRGCT AZ62P49 b0349 ADS62P29IRGCR
Contextual Info: ADS62P49 / ADS62P29 ADS62P48 / ADS62P28 www.ti.com. SLAS635A – APRIL 2009 – REVISED JUNE 2009 Dual Channel 14-/12-Bit, 250-/210-MSPS ADC With DDR LVDS and Parallel CMOS Outputs

6bw11 tube

Abstract: 6BW11 6EW6 6ew6 tube E12-70 tube 6EW6 general electric
Contextual Info: — PRODUCT INFORMATION — Compactron Dissimilar Double Pentode TUBCS • COLOR TV TYPE Page 1 • MULTI-FUNCTION • FIRST VIDEO AMPLIFIER 6BW11 • BANDPASS AMPLIFIER The 6BW11 is a compactron containing two dissimilar sharp-cutoff pentodes. Section 1 is a medium performance video amplifier useful for reference frequency or first video

IEEE1588

Abstract: VD11
Contextual Info: TLK100 www.ti.com SLLS931B – AUGUST 2009 – REVISED DECEMBER 2009 Industrial Temp, Single Port 10/100 Mb/s Ethernet Physical Layer Transceiver Check for Samples: TLK100 1 Introduction 1.1 Features 1 • • • • • • • • • • • • Temperature From –40°C to 85°C

S03-400

Abstract: BMS-R 0X0043 TLK110PT s0340
Contextual Info: TLK110 SLLS901 – DECEMBER 2011 www.ti.com Industrial Temp, Single Port 10/100Mbs Ethernet Physical Layer Transceiver Check for Samples: TLK110 1 Introduction 1.1 Features 1 • Low Power Consumption: <205mW PHY and 275mW with Center Tap Typical • Cable Diagnostics

b0350

Abstract: SLAS635B P-0056 Audio Bandpass Filter b0349 AZ62P48
Contextual Info: ADS62P49 / ADS62P29 ADS62P48 / ADS62P28 www.ti.com SLAS635B – APRIL 2009 – REVISED JANUARY 2011 Dual Channel 14-/12-Bit, 250-/210-MSPS ADC With DDR LVDS and Parallel CMOS Outputs Check for Samples: ADS62P49 / ADS62P29, ADS62P48 / ADS62P28 FEATURES •

Contextual Info: TLK111 www.ti.com SLLSEF8A – AUGUST 2013 – REVISED NOVEMBER 2013 TLK111 PHYTER Industrial Temperature 10/100Mbs Ethernet Physical Layer Transceiver Check for Samples: TLK111 1 Introduction 1.1 Features 123456 • Fully Pin Compatible with the TLK110 Device

2N19A

Abstract: 2N1310 2n1408 2N1305 2N1100 2N404 transistor 2N1008 npn germanium 2N1378 2N1924
Contextual Info: T - Z 7 - O I discrete devices semitron hot line TOLL FREE NUMBER 800-777-3960 alloy-junction germanium transistors ' T t i n t h i a i : Polarity v 2843A Maximum Power <W Maximum V) VCB VCE Typical G lin HFE Frequency Reip. (MHz) Gau P o h iity Î v t V f * 5" ^

Contextual Info: REV DESCRIPTION DATE APPROVED SEE SHEET #1. TO—5 PART NO. TO—5 TO— 6 T0-9 10-13 .225 .250 .300 .225 I.D. 5.7mm 6.4mm 7.8mm 5.7mm .375 .375 .437 .310 O.D. 9.5mm 9.5mm) 11.1mm 7.9mm) TO-18 PART NO. TO-12 TO— 16 T0-17 T0-18 TO—20 TO—27 .125 .125

TIL78

Abstract: photo transistor til78 til78 phototransistor FPT100 phototransistor ft06 MRD100 OS13 phototransistor OCP71
Contextual Info: S Y M B O L S & C O D E S E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE

2SC631

Abstract: 2SC632 2SC634 2n7471 A608 transistor pnp 2N7481 ZA-14 FV918 2N625 J3030
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

MM2102

Abstract: BSW30 ft06 310M 200S A190 A192 A193 A390 T072
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. I I M IN . I DERATE J to C W /C M A X Pc T 6 T T FREE I'A E I

2SA430

Abstract: 987T1 988T1 989T1 2SA316 OC304 2SA315 transistor 2N222 2SA314 2SA348
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

U22 2.5A 250V

Abstract: P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C

TIL78

Abstract: SA2739 phototransistor OCP71 cm601 JAN2N491 photo transistor til78 til78 phototransistor CM602 FPN100 ft06
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C