T0261AA Search Results

fl9014

Abstract: LL014 fl9110 F5 sot223 LL110 fl014 261AA fl210 CT1F sot223 p-channel
Contextual Info: international ËëüRectifier H E X F E T Power M OSFETs Surface Mount SOT-223 The new S O T -2 2 3 is capable of dissipating m ore than 1 W in a typical printed circuit board application. Its unique package design allows fo r m axim um die size, optim um thermal perform ance and ease of surface-m ount m anufacturing; suitable for use with all soldering techniques.

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Contextual Info: MO TO RO LA SC X ST RS /R F b3 b 7 S S M 0 0 ^ 3 2 bfiE D MTT MOTb MOTOROLA SEMICONDUCTOR! TECHNICAL DATA Medium Power Field Effect Transistor M M FT1N 10T1 N-Channel Enhancem ent Mode Silicon G ate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device

zt751

Abstract: TRANSISTOR zt751 Zt-75
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZT751T1 PNP Silicon Planar Epitaxial Transistor Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package which is

FLO14

Abstract: PD-91368B
Contextual Info: PD-91368B International IOR Rectifier IRFL4310 HEXFET Power MOSFET • • • • • • V dss = 10 0 V Surface Mount Dynamic dv/dt Rating Fast Switching Ease of Paralleling Advanced Process Technology Ultra Low O n-Resistance RDS on = 0 .2 0 Q lD = 1.6A

Contextual Info: RFT1P06E HARRIS S E M I C O N D U C T O R 1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET March 1998 Description Features 1.4A, 60V rDS ON = 0-285i2 2kV ESD Protected Temperature Compensating PSPICE Model SPICE Thermal Model These products are

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Contextual Info: MMFT107T1* M AXIMUM RATINGS Te = 25CC Unless O therw ise Noted Rating D rain-to-Source Voltage Symbol Value Unit Vdss 200 Volts D rain-to-G ate Voltage Vd G 200 Volts G ate-to-Source Voltage — C ontinuous VGS ±20 Volts Drain C urrent — C ontinuous — Pulsed