T004404 Search Results

Contextual Info: m IS61SF12832 128K x 32 SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Fast access times: 7.5 ns, 8 ns, 8.5 ns, 10 ns, and 11 ns Internal self-timed write cycle Individual Byte Write Control and Global Write Clock controlled, registered address, data inputs and control signals

IS61C1024

Contextual Info: IS61C1024 IS61C1024L ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM august 1995 FEATURES DESCRIPTION • H igh-speed access tim e: 12, 15, 20, 25 ns • Low active pow er: 600 m W typical • Low stan dby pow er: 500 |aW (typical) C M O S sta n d b y The I S S I IS61C1024 and IS61C1024L are very high-speed,

Contextual Info: ISSP IS28F002BV/BLV 262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation A u to m a te d B y te W rite an d B lo c k E rase — In d u s try -S ta n d a rd C o m m a n d U ser

Contextual Info: ISSI IS29F010 1 MEGABIT 128K x 8-bit CMOS, 5.0V Only Sectored Flash Memory p r e l im in a r y O c t o b e r 1998 FEATURES • High-performance CMOS - 35, 45, 55, 70, and 90 ns max. access time • Single 5V-only power supply - 5V ± 10% for Read, Program, and Erase

Contextual Info: ISSI IS80C51 8-BIT MICROCONTROLLER ADVANCE INFORMATION OCTOBER 1995 FEATURES DESCRIPTION • 4K bytes of in-circuit ROM The IS S IIS80C51 is a low power, high-performance CMOS 8bit microcontroller and is compatible with the industry stan­ dard 80C51 instruction set and pinout. The IS80C51 is manu­

Contextual Info: ISSI IS24C04-3 1 4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM PRELIMINARY SEPTEMBER 1995 FEATURES • • • • • • • • • Low po w e r C M O S — A ctive cu rre n t less than 2 m A — S tan dby curre nt less than 8 ^ A Low vo lta g e opera tion

Contextual Info: ISSI - 4-i IS61C64AH 8K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 12,15, 20, 25 ns T he IS S I IS61C64AH is a ve ry high-speed, low power, 8 192-w ord by 8-bit static RAM. It is fabricated using FSSI's high-perform ance CM O S technology. T his highly reliable pro­

Contextual Info: 64K x 32 LOW VOLTAGE SYNCHRONOUS PIPELINE STATIC RAM ADVANCE INFORMATION MARCH 1997 FEATURES DESCRIPTION • Fast access time: The IS S I IS61LV6432 is a high-speed, low-power synchro­ nous static RAM designed to provide a burstable, highperformance, secondary cache for the Pentium , 680X0™,

Contextual Info: ISSI 32,768 X 8 HIGH-SPEED CMOS EPROM FEATURES DESCRIPTION • Fast read access time: 45 ns • Pin compatible with the IS 27C 256 • Low power consumption The I S S IIS27HC256 is a ultra-high-speed 256K-bit Ultravio­ let Erasable CMOS Programmable Read-Only Memory. It

Contextual Info: IS ffl 32K x 32 SYNCHRONOUS FAST STATIC RAM PRELIMINARY JUNE 1997 FEATURES DESCRIPTION • Fast access tim e: The ISSI IS61C632A is a high-speed, low-power synchro­ nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,

Contextual Info: ISSI 2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM PRELIMINARY SEPTEMBER 1995 FEATURES • Low power CMOS — Active current less than 2 mA — Standby current less than 8 ¡¿A • Hardware write protection — Write control pin • Internally organized as 256 x 8

MAX714

Contextual Info: IS5F ¡ IB 131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation ADVANCE INFORMATION JULY 1997 Industrial Temperature Operation 40°C to +85°C • High-Performance Read

Contextual Info: ISSI IS27C512_ 65,536 x 8 CMOS EPROM FEATURES DESCRIPTION • Fast acce ss tim e: 90 ns • JE D E C -ap prove d pinout • H igh-sp ee d w rite pro gra m m ing The ISSI IS27C512 is an 512K-bit CMOS 64K-word by 8-bit U ltraviolet Erasable CMOS Program m able Read-Only

T-con

Contextual Info: CMOS SINGLE CHIP 8-BIT MICROCONTROLLER PRELIM INARY JUNE 1997 FEATURES G ENERAL DESCRIPTION • 4K x 8 ROM IS80C51 only The ISSI IS80C51/31 is a high-performance micro­ controller fabricated using high-density CMOS technology. The CMOS IS80C51/31 is functionally

IS28F010

Abstract: IS28F010-45PL
Contextual Info: ISSI I S 2 8 F 0 1 0 131,072 x 8 CMOS FLASH MEMORY p r e l im in a r y NOVEMBER 1995 FEATURES • Flash electrica l bu lk chip-e ra se - O ne seco nd typica l chip-e ra se • C M O S low p o w e r con sum p tion - 30 m A m axim um active curre nt - 1 0 0 |iA m axim um sta n d b y curre nt

tdq4-M

Abstract: HP 2231 IS42S16128
Contextual Info: 28 i 256K x 16 4-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION JUNE 1997 FEATURES DESCRIPTION • Clock frequency: 100 MHz • Two Bank internal structure: ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance.

IS61SF6436

Contextual Info: ISSF 64K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM advance INFORMATION MARCH1997 FEATURES DESCRIPTION • Fast access times: 8.5 ns, 9 ns, 10 ns • Internal self-timed write cycle The ISSIIS61SF6436 is a high-speed, low-power synchro­ nous static RAM designed to provide a burstable, high­

T1IG

Abstract: IS61LV6432 D2259
Contextual Info: ISSP 64K x 32 LOW VOLTAGE SYNCHRONOUS PIPELINE STATIC RAM ADVANCE INFORMATION MARCH 1997 FEATURES DESCRIPTION • The IS S IIS61LV6432 is a high-speed, low-power synchro­ nous static RAM designed to provide a burstable, high­ performance, secondary cache for the Pentium , 680X0™,

IS61C632

Abstract: 5C-32
Contextual Info: ISSI IS61C632 32K x 32 SYNCHRONOUS FAST STATIC RAM septeT berims FEATURES DESCRIPTION • Fast access time: - 8.5 ns-66 MHz;10 ns-60 MHz; 12 ns-50 MHz • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and

Contextual Info: ISSF 32K x 8 LOW VOLTAGE STATIC RAM FEATURES • Access time: 45, 70, 100 ns • Low active power: 70 mW • Low standby power — 45 n-W CMOS standby • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 3.3V power supply

Contextual Info: IS$F 8K x 8 LOW POWER CMOS STATIC RAM FEATURES DESCRIPTION • The IS S I IS62C64 is a low power, 8,192-word by 8-bit static RAM. It is fabricated using IS S I's high-performance CMOS technology. C M O S low power operation — 4 0 0 m W m ax. operating

Contextual Info: ISSI 1 3 1 ,0 7 2 x 8 C M O S E P R O M FEATURES DESCRIPTION • The ISSI IS27C010 is a 1 megabit 128K-word by 8-bit Ultraviolet Erasable CMOS Program m able Read-Only Memory. It requires only a single 5V power supply in normal read mode operation. Any byte can be accessed in less than

Contextual Info: 524,288 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY ADVANCE INFORMATION DECEMBER 1996 • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation • Automated Byte Write and Block Erase — Industry-Standard Command User Interface

Contextual Info: ISSI I S 2 8 F 0 1 0 _ 131,072 x 8 CMOS FLASH MEMORY PRELIMINARY NOVEMBER 1995 FEATURES • Flash electrica l bu lk chip-e ra se - O ne seco nd typica l chip-e ra se H igh pe rfo rm an ce - 45 ns m axim um access tim e • C M O S low p o w e r con sum p tion