T0 880 Search Results

2SK1778

Abstract: 27.145 2SK1296 2SJ172 2SJ173 2SJ174 2SJ247 2SK1300 2SK1301 2SK1302
Contextual Info: HITACHI 9 Table 6 : DIII-L Series Typical Characteristics Cont'd Electrical Characteristics typ. Absolute Maximum Ratings Package TO-220AB TO-220FM T0-3P T0-3P-FM Type Number 2SJ172 2SJ173 2SJ174 2SK970 2SK971 2SK972 2SK1296 2SK1300 2SK1301 2SK1302 2SJ247

MIE-404L3

Contextual Info: GaAlAs HIGH POWER T0-46 PACKAGE INFRARED EMITTING DIODE Description MIE-404L3 Package Dimensions The MIE-404L3 is an infrared emitting diode with Unit : mm inches GaAlAs / GaAlAs die technology molded in a water ψ4.75 (.187) clear plastic package. 45°

1NS818

Contextual Info: SCHOTTKY RECTIFIER DIODES, AXIAL, GLASS Peak Forward Peak Surge Current Inverse $ 9 3ms Voltage Superimposed I . . £ -B - 3 *> M -1 — Maximum Average Rectified •> <A T„ *C) PtV |V) 1N5711 C 8 5 t0 C8St1 SD101A SDtO tB SD101C I. (Amps)

circuit diagrams retu 3.02

Abstract: APPLIED MICROSYSTEMS CORP 68020 a23 445-1 VMIVME DR11W 0000A018 Panduit 050-040-455 S43A MC68153 perkin
Contextual Info: VMIVME-DR11W-A VMEbus-T0-DR11W INTERFACE INSTRUCTION MANUAL DOCUMENT NO. 500-000121-000 E Revised 08 December 1993 VME MICROSYSTEMS INTERNATIONAL CORPORATION 12090 SOUTH MEMORIAL PARKWAY HUNTSVILLE, AL 35803-3308 205 880-0444 1-800-322-3616 N O T IC E The information in this document has been carefully checked and is

MAU250

Abstract: u225 MAU2
Contextual Info: •I H Enhanced Memory Systems Inc. Features T0 Q7 SH 7 GODÜOTO bTfi ■ DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32EnhancedDRAMSIMM Product Specification Architecture The DM1M36SJ achieves 1Mb x 36 density by mounting nine 1Mb x 4 EDRAMs, packaged in 28-pin plastic SOJ packages, on a

COP8SEC5

Abstract: COP888EG COP840C COP840CJ COP880C COP912C COP820C COP820CJ volt ref COP820CJ Family
Contextual Info: 10/16/2003 COP8 ROM SELECTION/FEATURE GUIDE Device ROM RAM Voltage / Max MHz BrownOut /POR Other Features 16-Bit uWIRE Idle WD / Timers / Internal PLUS Halt/ Timer Clock Reduced PWM RC SPI Idle (T0) Int Monitor EMI I/O Pins Pins/ Package Types Temp Range

COP87L88EGV-XE

Abstract: COP8SAC740N8 COP8SAC728N8 COPC822-xxx 820C 840C 880C COP8SAB728N9 COPC842 smd wm
Contextual Info: Analog On-Chip Features √ √ 912C 768 64 √ 3 1 √ 6 820C 1k 64 √ 3 1 √ 7 840C 2k 128 √ 3 1 √ 8 880C 4k 128 √ 3 1 √ 5 A/D Converter WATCHDOG 3 Timer T0 Brown-Out √ Reduced EMI Interrupts 128 840CJ IDLE 2k 4 32k OTP √ COP √ Page #

thyristor N 600 ch 14

Contextual Info: VDRM ITAVM ITRMS ITSM V T0 rT = = = = = = 1800 V 932 A 1464 A 13.7x103 A 0.936 V 0.341 mΩ Ω Phase Control Thyristor 5STP 09D1801 Doc. No. 5SYA1058-01 March 03 • Low on-state and switching losses • Designed for traction, energy and industrial applications

5SYA2034

Abstract: 5SYA2020 5STP 09D1801
Contextual Info: VDRM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = 1800 932 1464 13.7x103 0.936 0.341 V A A A V mΩ Phase Control Thyristor 5STP 09D1801 Doc. No. 5SYA1058-01 March 05 • Low on-state and switching losses • Designed for traction, energy and industrial applications

Contextual Info: Light Emitting Diodes • Red Light Emitting Diodes for Fiber, Control Po V F AL e tr.tf Appli­ Type No. Pac kage If min. max. typ. typ. typ. cation No. (mA) (mW) (V ) (nm) (deg.) (ns) For control For plastic fiber LN143 T0-18 (Small) MR02-1 40 4.5 2.2

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

m0970

Abstract: ST157 BT157 IEC134 m0356 BT157SERIES Gate Turn-Off Thyristors philips thyristors LG DVD BT157-1300R
Contextual Info: N AMER PHILIPS/DISCRETE □fciE D 1^53=131 D 0 1 1 Ö S 5 5 BT157 SERIES FAST GATE TURN-OFF THYRISTORS Thyristors in T0-220AB envelopes capable of being turned both on and off via the gate. They are suitable for use in high-frequency inverters, resonant power supplies, horizontal deflection systems etc.

Contextual Info: 6 .Characteristics List nfrared LEDs, Visible LEDs M axim um R a tin g s T a -=25°C Type No. TLN101A Features TO -18 (w ith lens can ) TLN102 T0-18(with flat can) TLN103A ¿3 TLN 104 Double-end TLN 104(LB ) TLN105B D o u b le e n d (D IP ) ¿5 TLN107A Side View

sfh462

Contextual Info: SFH483 SIEMENS GaAIAs INFRARED EMITTER FEATURES Maximum Ratings * Highly Efficient GaAIAs LED O p e ra tin g a n d S to ra g e T e m p e ra tu re R a n g e T0 p. T s t g - 4 0 to + 8 0 °C J u n c tio n T e m p e ra tu re ( T j) .100°C

Contextual Info: tfs125g.doc VI TELEFILTER Filter Specification version 1.2 05.11.2002 TFS 125 G 1/5 Measurement Condition 23 °C 0 dBm 200 Ω balanced 50 Ω single ended input: 880 Ω // -11,0 pF output: 890 Ω // -12,6 pF Ambient temperature: Input power level: Source impedance:

Contextual Info: □IXYS MD0 500 High Power Diode Module V RRM FRMS FAVM =1200-2200 V = 880 A = 560 A Preliminary Data V RRM V RSM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 Symbol Test Conditions ^FRMS ^FAVM "^"vj ^FSM TVJ= 45°C VR= 0 l2t Type 3 o MDO

Contextual Info: SAW Components SAW resonator Short range devices Series/type: Ordering code: R880 B39431R 880H210 Date: Version: February 04, 2013 2.0  EPCOS AG 2013. Reproduction, publication and dissemination of this data sheet, enclosures hereto and the information contained therein without EPCOS’ prior express consent is prohibited.

kds 9a

Abstract: C67078-A1609-A2 D880
Contextual Info: ÛÔD D • ÔSBSbOS 0014020 b H S I E 6 880 14828 D T ~ 3 Cî ~ / 3 BUZ 88 SIEMENS AKTIENGESELLSCHAF -Main ratings N-Channel = 800 V Drain-source voltage VDa = 4,3 A Continuous drain current Io Drain-source on-resistance ^D S on = 2,0 Q Description SIPMOS, N-channel, enhancement mode

buz 90 af

Contextual Info: ÖÖD D • ÔSBSbQS 0014ä2fl b m s i E G 880 14828 D BUZ 88 ' T ~ 3 Cf ~ / 3 S I E M E N S A K T I E N G E S E L L S C H A F -Main ratings N-Channel Drain-source voltage Continuous drain current Drain-source on-resistance Description Case «>s I0 = 800 V

DIP40

Abstract: CSP4 1X16 820C 840C 880C PLCC44 1x16-Bit pwm generator SPI interface DIP28
Contextual Info: N COP ROM/OTP 8-Bit Microcontroller Quick Reference Guide - 3/22/00 RAM A/D Converter Timers Serial Interfaces I/Os Temperature Range Additional Features/ Comments DIP20/SO20 commercial Lowest Price Package Options COP8 Basic Family: 3 Interrupt sources; Static Halt; programmable I/Os; Timer with 1x 16-Bit Capture/Autoreload register

HE8815VG

Contextual Info: HE8815VG Description GaAIAs IRED The HE8815VG is a 880 nm band GaAlAs infrared light emitting diode with a double heterojunction structure. It is suitable as a light source for VCR camera autofocus mechanisms. Features Package Type • HE8815VG: VG • High efficiency and high power output

TPM754

Abstract: 80C451 TS PQ4 24 87c652 SJA1000T sja1000
Contextual Info: Appendix 8XC51/80C31 pi.o T 40j v cc P11[ I 3 5Ij P 1 .2 [? PO.O/ADO PO.I/AD1 P 1 , 4 jjf 36 P0.3/AD3 pi5(T 35] P0.4/AD4 P0 5/ADS P 1 6 CZ [? PLASTIC DUAL IN-LINE PACKAGE [Tl Ml 11 cx r: = 23 I PO 7/AD7 Pin 30 J ALE/PROG § PSEN TRT17P3.3Q3 § 2 3 P2.7/A15

MD0500

Abstract: MDO 500-12N1
Contextual Info: □IXYS High Power Diode Module MD0 500 V RRM =1200-2200 V = 880 A FRMS FAVM = 560 A Preliminary Data v RSM V RRM Type Î V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 Symbol "^"v j ^FAVM Tc = 85°C; 180° sine l2t 500-12N1 500-14N1 500-16N1

SN74ABT7819

Abstract: SN74ACT7807 SCZA004A
Contextual Info: Metastability Performance of Clocked FIFOs First-In, First-Out Technology Chris Wellheuser Advanced System Logic – Semiconductor Group SCZA004A 1 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor