T-1 PHOTOTRANSISTOR Search Results

SG211V

Contextual Info: KODEIMSHI CORP. PHOTOINTERRUPTERS SG-211V DIMENSIONS Unit The S G -2 1 1 V photointerrupter type.combines h ig h - o u t p u t high-performance GaAs IRED w i t h standard high s e n s itiv e Cathode o— i f t phototransistor. l i t Ä : mm - 1 { - H Anode o— 1

VTT1222W

Abstract: VTT1223W
Contextual Info: SbE D • BOBGbDT 0 0 0 1 1 7 0 .025" NPN Phototransistors VTT1222W, 23W Clear T-1 3/4 Plastic Package E G 8c 377 » V C T T -4 1 -6 1 G VACTEC PACKAGE DIMENSIONS inch mm 1.0 0 CASE ZBW T-1 3/4 (WIDE ANGLE) CHIP TYPE: 25T ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION

Contextual Info: 3 G3 D b D T GDDllfiS ÔTÛ 5L.E D .050" NPN Phototransistors IVCT V T T 9 1 12, 9113 Epoxy Lensed TO-106 Ceramic Package T—41—61 E G & G VACTEC PACKAGE DIMENSIONS inch mm .50 (1 2 .7 ) .2 1 0 (5 .3 3 ) .065 (2 .1 6 ) .075 (1 .9 0 ) .100 (2 .5 4 ) 1 EMITTER

WSS ceramic package

Abstract: ST-1CL5 ST-315 stroboscop HI 1285-6
Contextual Info: T /^ _ DETECTORS ^ L \ PHQTOTRAMSISTQRS T ' £ * 1 ST-315 S T -3 1 5 li, DIMENSIONS (U n it:m m ) T 'IE — )l' K S t i t ¡ S i i J S « V <J =J > 7 * s h 7 > v 7 $ t ' t 0 » a , 'm T m m ^ M 7 t o The ST-315, a high-sensitivity NPN silicon phototransistor

VA1122

Abstract: VA1112
Contextual Info: OPTOELECTRONICS PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCHES C iap ! . t ,;'i it jm m ; N urnbt: ; 1 idM •JV f* o t ' r i ON W i ri M ? o n d i t i an 1 . 1 . 13,’ S t' n :-.ii ! ' y CL . x B V CfO ■' V! Ra i in q mu t im n T a b le n it ! O PB860N 11

t431

Abstract: c 4161
Contextual Info: SHARP ELEK/ MELEC DIV 1SE D I 01007^0 0005770 S I Phototransistors P T431/P T431F . P T • T-4 1 -6 1 4 3 1 / P T 4 3 _ N arrow Acceptance. High Sensitivity P hototransistor y.ifi 1 F Features 1. Narrow acceptance epoxy resin package : TY P. ± 1 3 ’

FPT100

Abstract: CECL 006 FPT110 Phototransistors fairchild semiconductors semico ftp-100 FPT100/A/B
Contextual Info: S e m ic o vtd tid o rs Fairchild Sem iconductors Opto-electronics - Silicon Phototransistors C O N N E C T I O N D I A G R A M & D I M E N S I O N S IN S F P T 100, F P T 1 1 0 S ilic o n P h oto T ran sisto rs G E N E R A L D E S C R IP T IO N T h e F P T 1 0 0 a n d F P T 1 1 0 are three term inal N P N

phototransistor FPT 100

Abstract: Optical tachometer design of Optical tachometer file lfpt100 fpt-100 FPT100
Contextual Info: 100 '✓ y ! / . . N pN FPT100A I p p j -¡gOB s il ic o n I I PHOTOTRANSISTOR MECHANICAL OUTLINE GENERAL DESCRIPTIONS TO -1 0 6 T h e F P T 1 0 0 , F P T 1 0 0 A & F P T 1 0 0 IB are thr«ee te rm in a l N P N silicon planar phototransistors. dark c u rre n t.

VTT7114

Abstract: VTT7113
Contextual Info: 5bE D VCT .040" NPN Phototransistors V T T 7 1 13, 7 1 1 4 Molded Lensed Lateral Package E G & G V A C TEC T -4 1 -6 1 PACKAGE DIMENSIONS inch mm .0 5 5 ( 1 .4 0 ) .7 0 ( 1 7 . 8 ) .0 4 5 ( 1. 1 4 ) MINIMUM .0 2 8 ( 0 . 7 1 ) MAX. Ì-.1 8 0 ( 4 .5 7 )

PT4110

Abstract: PT411
Contextual Info: SHARP P T 4 1 1 PT411<W>T4110F Q / P T 4 1 1 Side View and Thin Fiat Type Phototransistors F • Features ■ Outline Dimensions Unit : mm 1. C o m p act an d th in fla t package 5wno -o . cn c. 30 * OS T 2 W id e b eam angle (H alf intensity angle : ± 7 0 “ »

Contextual Info: SbE D • 3D3GbDIi GOGllVT STM .040" NPN Phototransistors IVCT V T T 7 1 13, 7114 Molded Lensed Lateral Package E G & G VACTEC T—41—61 PACKAGE DIMENSIONS inch mm .05 5 (1 .4 0 ) .70 (1 7 .8 ) .04 5 (1 .1 4 ) MINIMUM .02 8 (0 .7 1 ) MAX. £ Ì-.180 (4 .5 7 )

e26a

Abstract: E148-5V E149-12V E149-5V E150-5V E151-12V E151-5V E25A E304-12V E304-5V
Contextual Info: A B 2 7 MI N 1.5 5.9 8.6 1 CATHODE 2.54 5 .5 1 MAX T-1 and T-1¾, Infrared LEDs: 880nm, 940nm Size Lens Radiant Power at 20mA Minimum Typical INFRARED 1 E21 T-1 Clear 2.0mW/sr INFRARED 2 E22 T-1 Trans.Blue INFRARED 3 E23 T-1¾ Clear INFRARED 4 E24 T-1¾ Trans.Blue

E150-5V

Abstract: infrared 660nm* 20mw E151 E148-5V E149-12V E149-5V E151-12V E151-5V E304-12V E304-5V
Contextual Info: A B 2 7 MI N 1.5 5.9 8.6 1 CATHODE 2.54 5 .5 1 MAX T-1 and T-1¾, Infrared LEDs: 880nm, 940nm Size Lens Radiant Power at 20mA Minimum Typical INFRARED 1 E21 T-1 Clear 2.0mW/sr INFRARED 2 E22 T-1 Trans.Blue INFRARED 3 E23 T-1¾ Clear INFRARED 4 E24 T-1¾ Trans.Blue

Contextual Info: BOaObOl QQQ1176 bbfi H V C T SbE D .040" NPN Phototransistors VTT 1212, 1214 Clear T-1 3/4 Plastic Package T -4 1 -6 7 E G & G VACTEC PACKAGE DIMENSIONS inch mm 1.00 ( 25 . 4) Also available in Infrared transmitting/ visible blocking version. Q CASE 26 T-1 3/4

VTT1225

Abstract: VTT1226 VTT1227 VTE12xx
Contextual Info: SbE D • 303^0^ OODllb'i bSS * V C T .025" NPN Phototransistors V T T 1 2 2 5 , 26, 27 Clear T-1 3/4 Plastic Package E 6 & <S VACTEC PACKAGE D IM EN SIO N S inch mm 1 .0 0 ( 2 5 . 4 ) MINIM UM ■050 ( 1 . 2 7 ) 0 3 0 ( 0 .7 6 ) .2 4 0 ( 6 .1 0 ) .2 2 0 ( 5 . 5 9 )

transistor s07

Abstract: VTT1031 VTT1032 VTT1033
Contextual Info: SbE D aDaDbDT QO Q 11 Ô Ô .060" NPN Phototransistors VCT V T T 1 0 3 1 , 32 TO-46 Flat Window Package _ S07 • E Q 8. G V A C T E C PACKAGE DIMENSIONS an* nun ■ 1 5 « ( 3 .9 -1) ( 1 2 .7 ) .5 0 ( 0 .5 1 ) .2 0 5 CASE 2 ( 5 .2 1 ) TO-46 HERMETIC (FIAT)

transistor a950

Abstract: a950 transistor a950 o transistor A950 a950 y A950 O RJ450 BPX43 RJ45-0 8334A
Contextual Info: SIEMENS C M P N T S i OPTO -4ME D • a53b3Sb 0005223 b H S I E X SIEM ENS BPX43 SERIES PHOTOTRANSISTOR T -41-61 Package Dimensions in Inches mm .1 10 (2 .8 ) .1 10(2.8) Maximum Ratings Operating and Storage Temperature (T,^ T ^ J .

mct6 opto isolator

Abstract: MCT6 opto DIN57883 05033 "Direct Replacement" SIEMENS LN10
Contextual Info: SIEMENS CMPNTSi OPTO MME D • Û23b32b QQDS033 1 HISIEX r- m- *23 S IE M E N S ILCT6 DUAL PHOTOTRANSISTOR OPTOCOUPLER FEATURES T w o Isolated Channels Per Package 5 0 % T yp ical Current T ransfer Ratio 1 n A T yp ic al Leakage Current Direct Replacem ent For M C T 6

Contextual Info: SIEMENS C M P N T S t OPTO M4E D • Ô53b32h QGQS5S1 H « S I E X SIEM ENS BPX38 SERÍES PHOTOTRANSISTOR T -4 1 -6 1 Package Dimensions in Inches mm .113128} Maximum Ratings Operating and Storage Temperature T „ J . -55*C to +125”C

SG-212

Abstract: EE 45015 251C SG-213 SG-214 SG-212B
Contextual Info: T Z ^ Y ^ 1 jT , P H O T O iN T E R R U P T E R S J T r a n s im i ty p e SG -212 SG-212B, & 'J 'M r o a 5 I S 7 * DIMENSIONS U n it:m m ^ S T '-T o The SG-212 is a photointerrupter consisting of GaAs IRED and phototransistor. 1 # fi FEATURES • S /M l

VTT1112

Abstract: transistor T2S DDD11 VTT1113 VTT1114 0 205 001 040 transistor c 4161
Contextual Info: SbE 3030bCH D DDD11Ö3 .050" NPN Phototransistors VCT V T T 1 1 1 2 , 13, 14 TO-46 Lensed Package E G & G T2S T-41-61 VACTEC PAC KAG E DIMENSIONS inch mm CASE 3 T0-4G HERMETIC (LENSED) CHIP TYPE: 50T PRO D UCT DESCRIPTION AB SO LU T E MAXIMUM RATINGS (@ 25°C u n le s s otherw ise noted)

Vactec

Abstract: DDD11 VTT1112 VTT1113 VTT1114
Contextual Info: SbE 3030bCH D DDD11Ö3 .050" NPN Phototransistors VCT V T T 1 1 1 2 , 13, 14 TO-46 Lensed Package E G & G T2S T-41-61 VACTEC PAC KAG E DIMENSIONS inch mm CASE 3 T0-4G HERMETIC (LENSED) CHIP TYPE: 50T PRO D UCT DESCRIPTION AB SO LU T E MAXIMUM RATINGS (@ 25°C u n le s s otherw ise noted)

kb100

Contextual Info: SIEMENS CfIPNTSi OPTO 4ME D • ñ23L35b 0005033 1 « S I E X r- m- *23 S IE M E N S ILCT6 DUAL PHOTOTRANSISTOR OPTOCOUPLER FEATURES T w o Isolated Channels Per Package 5 0 % T yp ical Current T ransfer Ratio 1 n A T yp ical Leakage Current Direct Replacem ent For M C T 6

PC17T1-PC-17T1

Abstract: PC-17T1 PC-17T4 PC-17T2 PC17T1
Contextual Info: LUMEX O P T O / C O M P O N E N T S INC Sb lb ll B 0000fl?b T • LMX 41E D PHOTOCOUPLERS P C - 1 7 _ T - Y / - 8 3 T 1 , 2 , 4 DIMENSIONS Unit: mm PC-17T1, 2, 4, photocoupler, is an optically coupled pair employing a GaAs IRED and a silicon NPN phototransistor.