KB100 Search Results

Contextual Info: LM 4884 LM4884 2.1W Differential Input, BTL Output Stereo Audio Amplifier with RF Suppression and Shutdown Texa s In s t r u m e n t s Literature Number: SNAS267B Sem iconductor October 5, 2011 B O O m r Audio Power Am plifier Series 2 .1W D ifferential Input, BTL O u tp u t S tereo A u d io A m p lifie r

11AV1

Abstract: 11AV2 s415 RF M1E-H 11AV3 11AV-3
Contextual Info: MIE D PHILIPS INTERNATIONAL • 711002b Q030M24 1 M P H I N P h ilip s S e m ic o n d u c to rs Product sp ecification Heavy duty optocouplers CNW11AV-1/2/3 FEA TUR ES • Minimum 2 mm isolation thickness between emitter and receiver • A wide body encapsulation with a

453 optocoupler

Abstract: optocoupler a 454 optocoupler ic 102 Optocoupler OPTOCOUPLER dc output SL5505S
Contextual Info: Philips Semiconductors Product specification 7 ^ -V /- High-speed optocoupler flUALITY TECHNOLOGIES SL5505S CORP S7E D 74bb651 0004720 SST • 2TY FEATURES • Short propagation delay times • Low saturation voltage • High transient immunity • High degree of AC and DC

314 optocoupler

Abstract: 14CNP SOT-90B 453 optocoupler sot90b optocoupler 312 317 optocoupler transistor b73
Contextual Info: Philips Semiconductors Product specification 7 Optocoupler 2UALITY T E C H N O L O G I E S OF4114 CORP 57E D 74t.bfiSl G D O H b b b 773 » A T Y FEATURES • High current transfer ratio and low saturation voltage, making the device suitable for use with

Contextual Info: OTZ CONNECTOR Disconnectable Crimp style Wire-to-wire connectors Specifications ––––––––––––––––––– • Current rating: Signal circuit 1.0A AC, DC AWG #26 Power supply circuit 5A AC, DC (AWG #20) • Voltage rating: Signal circuit 50V AC, DC (AWG #26)

Contextual Info: PO40/44A _ OPTOCOUPLEh Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo­ transistor with accessible base in a SOT90B envelope. Designed for low input current and long life operation.

Contextual Info: Product specification Philips Semiconductors GaAIAs high-voltage optocouplers CNG82/CNG83 FEATURES • High output/input current transfer ratio at low input current • High degree of AC and DC insulation 3750 V (RMS and 5300 V (DC) • Input/output pin distance

Contextual Info: N AMER PHILIPS/DISCRETE aSE D • ^ 5 3 1 3 1 DOHIOO? _ JL_ CNX62 m r - - 8 5 HIGH-VOLTAGE OPTOCOUPLER The CNX62 is an optocoupler consisting o f an infrared emitting GaAs diode and a silicon npn phototransistor in a dual-in-line Dl L plastic envelope. The base is not connected.

SOT-90B

Contextual Info: SL5500 SL5501 SL5511 y v OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn photo­ transistor with accessible base. Plastic envelopes. Suitable fo r T TL integrated circuits. Features • High output/input DC current transfer ratio

optocoupler 357

Contextual Info: SL5504 J V O PTO C O U PLER Optically coupled isolator consisting of an infrared emitting GaAs diode and a high voltage silicon npn phototransistor w ith accessible base. Plastic envelope. Suitable for TTL integrated circuits Features • High output/input DC current transfer ratio

Contextual Info: MCT26 *1 OPTOCOUPLER A Optocoupler in a Dl L plastic envelope. The M CT26 comprises an infrared GaAs diode and a npn silicon phototransistor. UL — Covered under U L component recognition F IL E E 90700 V D E — Approved according to V D E 0883/6.80 Reference voltage V D E 0 1 10b Tab 4 : A C 380 V/DC 450 V — isolation group C

Contextual Info: H11B1 H11B2 H11B3 O P T O C O U P L E R S Optically coupled isolators consisting o f an infrared emitting GaAs diode and an npn silicon photoDarlington transistor. Features • Very high output/input DC current transfer ratio • Isolation voltage o f 2 kV RMS and 2.82 kV DC

Contextual Info: 4N38 4N38A J V ^ /^ E \ O PTO CO U PLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and an npn silicon photo­ transistor. They are suitable fo r use w ith TTL integrated circuits. Features • High maximum output voltage • Fast switching and low saturation voltage

CNX62

Abstract: BS415
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • ^53*131 GOHIOO? .1 ■ CNX62 r - 4 1 - g s HIGH-VO LTAGE O PTO CO U PLER T h e C N X 6 2 is an optocoupler consisting of an infrared emitting G aA s diode and a silicon npn phototransistor in a dual-in-line D IL plastic envelope. T h e base is not connected.

CBC 184 transistor

Abstract: S 354 OPTOCOUPLER CNX35U CNX36U CNX39U
Contextual Info: CNX35U CNX36U CNX39U T O OPTOCOUPLERS O ptically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn phototransistor w ith accessible base. Plastic envelopes. Suitable fo r T T L integrated circuits. Features • • • •

L1102

Abstract: "sot-90B" sot90b LF 428 4N38 4N38A IEC134 OPTOCOUPLER dc SOT-90B
Contextual Info: 4N38 4N38A » OPTOCOUPLERS 1— \ O ptically coupled isolators consisting o f an infrared em itting G aAs diode and an npn silicon photo­ transistor. They are suitable fo r use w ith T T L integrated circuits. Features • High maximum o u tp u t voltage

H11B255

Abstract: sot-90B OPTOCOUPLER dc
Contextual Info: H11B255 _ y \ _ OPTOCOUPLER O ptically coupled isolator consisting o f an infrared em itting GaAs diode and an npn silicon photo­ Darlington transistor. Features • High maxim um o u tp u t voltage • V ery high o u tp u t/in p u t DC current transfer ratio

MCA231

Abstract: MCA265 MCA230 MCA255 OPTOCOUPLER dc 231 transistor opto isolators
Contextual Info: MCA230 MCA231 MCA255 OPTOCOUPLERS O ptically coupled isolators consisting o f an infrared em itting GaAs diode and an npn silicon photo-D arlington transistor. Features o f these products: • • • • High o u tp u t/in p u t DC current transfer ratio

CNX71A

Abstract: CNX72A UBB033
Contextual Info: P rodu ct specification P h ilip s S e m ico n d u cto rs High-voltage optocouplers CNX71A/CNX72A FE A T U R E S • High current transfer ratio and a low saturation voltage, making the devices suitable for use with T TL integrated circuits • High degree of A C and D C

bt 44a

Abstract: 12945 WE VQE 11 E WE VQE 23 F WE VQE 24 E P041 P043A TI210 331 Optocoupler
Contextual Info: P040/44A _ OPTOCOUPLEh I » Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo­ transistor with accessible base in a SOT90B envelope. Designed for low input current and long life operation.

PHILIPS CNX38

Abstract: CBC 184 transistor CNX38 CNX38U 181 OPTOCOUPLER
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • fc.bS3tm Jl GG2GT51 T CNX38 OPTOCOUPLER O ptically coupled isolator consisting o f an infrared emitting G aAs diode and a silicon npn phototransistor w ith accessible base. Plastic envelope. Suitable fo r T T L integrated circuits.

Contextual Info: SL5500 SL5501 SL5511 , ÛUALITY TECHNOLOGIES CORP 57E D • 74bbô51 0GD4bûT 270 «fiTY OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn phototransistor with accessible base. Plastic envelopes. Suitable for T T L integrated circuits.

Contextual Info: Philips Semiconductors Product specification 7- H t - r j Optocouplers ÛUA L IT Y T E C H N O L O G I E S CNY17-1 to 4/CNY17F-1 to 4 CORP S7E D 74bbasi OOQMblM • Fast switching STANDARD REFERENCE • Low saturation voltage UL note 1 • High maximum output voltage

CNY17G-3

Abstract: CNY17G3
Contextual Info: Philips Semiconductors Product specification High-voltage optocouplers CNY17G/CNY17GF QUALITY TECHNOLOGIES CORP TMbböSl OOOMbEE M m S7E D IflTY FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with