T-04 TRANSISTOR Search Results

Contextual Info: REV. DESCRIPTION A B C D DATE APPROVED 04/05/04 11/04/04 07/12/11 03/13/12 Engineering Release Engineering Update Request for Quotation Dimensioned Bumps M. C. M. C. T. Y. T. Y. 0.20 [5.1mm] 0.22 [5.5mm] 0.035 [0.9mm] —«- r 0.015 [0.4mm] TYP. 0.071 [1.8mm]

Contextual Info: National Semiconductor MILITARY DATA SHEET Original Creation Date: 04/24/95 Last Update D a t e : 04/24/95 Last Major Revision D a t e : 04/24/95 MNLMl 5 78—X R E V OAO SWITCHING REGULATOR General Description The LM1578 is a switching regulator which can easily be set up for such DC-to-DC voltage

GMA14

Abstract: GMA64
Contextual Info: ISSUED DATE :2005/04/04 REVISED DATE : G M A6 4 P N P E P I TA X I A L P L A N A R T R A N S I S T O R Description The GMA64 is a darlington amplifier transistor designed for application requiring extremely high current gain. Features High DC current gain

2.45V PRECISION REFERENCE REGULATOR

Abstract: GQ2141
Contextual Info: ISSUED DATE :2006/04/04 REVISED DATE : GQ2141 C M O S P o s i t i v e Vo l t a g e R e g u l a t o r Description The GQ2141 of positive, linear regulator feature low quiescent current 50 A typ. with low dropout voltage and excellent PSRR, thus making them ideal for Telecommunications and other battery applications.

be5l

Abstract: CA3046 equivalent lg 15.6 pinout CA3046 CA3046M BE4L d143 T transistor
Contextual Info: CA3045' CA3046 H A R R 'S M S E M I C O N D U C T O R J M • W » W General Purpose NPN Transistor Arrays N o vem b er 1996 Features Description • Two Matched Transistors T he C A 3 04 5 and C A 3 04 6 each co n sist o f five general p u rpo se silicon NPN transisto rs on a com m on m on olithic

Contextual Info: STB80NF03L-04  N-CHANNEL 30V - 0.0035 Ω - 80A - D2PAK STripFET POWER MOSFET PRELIMINARY DATA T YPE V DSS R DS on ID STB80NF03L-04 30 V < 0.004 Ω 80 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.0035 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: STB80NF03L-04  N-CHANNEL 30V - 0.0035 Ω - 80A - D2PAK STripFET POWER MOSFET PRELIMINARY DATA T YPE V DSS R DS on ID STB80NF03L-04 30 V < 0.004 Ω 80 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.0035 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: GT60M104 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 6 0 M 1 04 Unit in mm HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf=0.4^s Max. Low Saturation Voltage : Vqe (sat) = 3.7V (Max.) Enhancement-Mode

Contextual Info: GT60M104 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 6 0 M 1 04 Unit in mm HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf=0.4^s Max. Low Saturation Voltage : Vqe (sat) = 3.7V (Max.) Enhancement-Mode

Contextual Info: T C I 04 3456 x 1 CCD LINEAR IMAGE SENSOR D 2 6 8 7 , FEBRUARY 1 9 8 3 -R E V IS E D JU LY 1 989 T C I 04 . . . D U A L -IN -L IN E P ACKAGE 3 4 5 6 x 1 Sensor Element Organization TOP V IE W Virtual-Phase N-Channei Silicon MOS KJ Technology High Quantum Efficiency

2N6758

Abstract: 6757
Contextual Info: UNITRODE CORP 9347963 t UNITRODE CORP ~~~ 92D POWER MOSFET TRANSISTORS 2 0 0 V o lt, 0 .4 o o i c mt , s 1 04 96 D j ; j t x , j t x v 2N6758 T - ' b l - i i O h m N -C h a n n e l " DESCRIPTION The Unltrode power MOSFET design utilizes the most advanced technology available.

SKN+26/04

Contextual Info: 51E D • âl3bb?l 0GG3T17 3T4 « S E K Û 5EMIKR0N SEMIKRON INC 41 A | Ifav sin. 1 8 0 ; T case 26 trr = V 400 Fast Recovery Rectifier Diodes —p Ifrms (maximum values for continuous operation V rsm V rrm A 150 ns SKN2F17/04 SKN 2 F 17/04 UNF SKN 2 F17/06

TLP504

Contextual Info: TOSHIBA PHOTOCOUPLER SEMICONDUCTOR TO SH IB A TECHNICAL TLP504A, TLP504A-2 DATA GaAs IRED & PHOTO-TRANSISTOR TLP504A PROGRAM M ABLE CONTROLLERS AC/DC-INPUT MODULE SOLID STATE RELAY The T O S H IB A T LP5 04 A and TLP504A-2 consists of a photo-transistor op tically coupled to a gallium

2N3867

Abstract: 2N3868 2N5147 2N5148 2N5149 2N5150 2N5151 2N5152 2N5153 2N5154
Contextual Info: DIODE T R A N S I S T O R CO INC rnr m-aa/iu-a Ö3 5 2 D’IODE T R A N S I S T O R C Ö “INC DE 12fl4S355 OODOlBt. 0 04 84D 00136 DIODE TRANSISTOR CU.M C. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call T O LL FR EE 800-526-4581 FA X No. 201-575-5803

Contextual Info: warn P H O 'TO T R A N S IS T O R ?*, ¡-x PHI 04 PHOTO TRANSISTOR - N E P O C SERIES — The PH 104 is a photo transistor in a plastic molded package, and PACKAGE DIMENSIONS very suitable for a detector of a photo interrupter. in millimeters inches 5.0

2EDL23N06

Abstract: trimble R8
Contextual Info: Eice DR IV ER High voltage gate driver IC BDTIC E valu atio n B oar d Application Note EV AL -2 E DL2 3N 06 PJ EV AL -2 E DL2 3N 06 PJ Applic atio n N ote Rev. 1.0 2014-04-11 Infin eon T echnol ogi es A G www.BDTIC.com/infineon BDTIC Edition 2014-04-11

jc5010

Contextual Info: 4684955 I T T S E MI CONDUCT ORS 87D 02324 D y . Q_j deJ 4^04^55 □□02324 □ § NPN AND PNP TRANSISTORS NPN Silicon Transistors with Center Collector Plastic Package TO-92 D Type Pin Config. VcEO VcEsat h FE fx Ices at at at V ce/ I c Ic / I b V ce C0b

D1803

Abstract: transistor d1803 Transistor 2SB1203 IC D1803 pa 2030a CAW 04 22E SD1803 2SB1203 NPN S2e d1803 transistor
Contextual Info: SA NY O S E M I C O N D U C T O R 2SB1203, 2SD1803 CORP TWOTb SSE D OdOTnG 3 T - 3 3 -IR T -3 3 • ♦ P N P /N P N Epitaxial Planar Silicon Transistors 2 04 4 High-Current Switching Applications 2085B A p p licatio n s • Relay drivers, high-speed inverters, converters, and other general high-current switching applications

sot-223 body marking D K Q F

Contextual Info: MOTOROLA Order this document by MMFT108T1/D SEMICONDUCTOR TECHNICAL DATA T Field Effect Transistor N-Channel Enhancement-Mode Logic Level SOT-223 MMFT108T1 TM OS 2 ,4 DRAIN TMOS FET TRANSISTOR N-CHANNIEL — ENHANCEMENT CASE 318E-04, STYLE 3 SOT-223 TO-261AA

GMA14

Contextual Info: ISSUED DATE :2001/10/04 REVISED DATE :2006/05/10C G M A1 4 NP N E PITAX I AL PLANAR T RANSI STOR Description The GMA14 is a Darlington amplifier transistor designed for applications requiring extremely high current gain. Package Dimensions SOT-89 Millimeter

M4410A

Abstract: tm4410a STM4410A
Contextual Info: S T M4410A S amHop Microelectronics C orp. J an 04 2005 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.

G8050S

Abstract: G8550S
Contextual Info: CORPORATION G8050S ISSUED DATE :2004/04/22 REVISED DATE :2004/11/29B N P N E P I TA X I A L T R A N S I S T O R LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR Description The G8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio

ulm 2003

Abstract: ulm 2004 ULN2003 current buffer ULN2003 PIN configuration uln2003 buffer ULN2003N ULN2003 equivalent ULN2003 ULN2003 ac ULN2004N
Contextual Info: ULN2003/04 Signetics High V o lta g e /H ig h Current Darlington Transistor Arrays Product Specification L in e a r P r o d u c t s D E S C R IP T IO N These high voltage, high current Darling­ ton transistor arrays are comprised of seven silicon NPN Darlington pairs on a

EN4094

Contextual Info: SA NY O S E M I C O N D U C T O R CORP Ordering number: EN4094 b3E D • 7n7D7b D Q l E M ô b 04Ô * T S A J I Monolithic Digital 1C SÄWO LB1741 No. 4094 Octal NPN Darlington-pair Transistor Array PINOUT OVERVIEW The LB1741 is a high-current Darlington-pair transistor