T 5A Search Results

Contextual Info: NPN EPITAXIAL SILICO N DARLINGTON T R A N SIST O R T IPI 40T/141T/142T HIGH DC CURRENT GAIN - MIN hFE = 1000 @ VCE = 4V, IC = 5A M O N O L IT H IC C O N S T R U C T IO N IN B A S E -E M IT T E R S H U N T R E S IS T O R S IN D U S T R IA L U S E C o m p le m e n t to T IP 1 4 5 T /1 4 6 T /1 4 7 T

Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 45T/146T/147T HIGH DC CURRENT GAIN - MIN hFE = 1000 @ VCE = - 4V, IC = - 5A T O -2 2 0 M O N O L IT H IC C O N S T R U C T IO N IN B A S E -E M IT T E R S H U N T R E S IS T O R S IN D U S T R IA L U S E C o m p le m e n t to T IP 1 4 0 T /1 4 1 T /1 4 2 T

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 40T/141T/142T HIGH DC CURRENT GAIN - MIN hFE = 1000 @ VCE = 4V, IC = 5A T O -2 2 0 M O N O L IT H IC C O N S T R U C T IO N IN B A S E -E M IT T E R S H U N T R E S IS T O R S IN D U S T R IA L U S E C o m p le m e n t to T IP 1 4 5 T /1 4 6 T /1 4 7 T

10A5002

Abstract: TIP142T TIP140T TIP141T NPN Transistor VCEO 80V 100V hfe 100
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTO R T IP I 40T/141T/142T HIGH DC CURRENT GAIN - MIN hFE = 1000 @ VCE = 4V, IC = 5A M O N O L IT H IC C O N S T R U C T IO N IN B A S E -E M IT T E R S H U N T R E S IS T O R S IN D U S T R IA L U S E C o m p le m e n t to T IP 1 4 5 T /1 4 6 T /1 4 7 T

Contextual Info: S p e c if ic a t io n s 1. C u r r e n t R a t in g Q.5A AC/DC 2. V o l t a g e R a t in g 5 0 V AC/DC 3. C o n t a c t R e s i s t a n c e > 30m o h n . max, 4. I n s u l a t i o n R e s i s t a n c e : 100M ohm, min.a t 1 0 0 V DC 5. W i t h s t a n d i n g V o l t a g e ì 1 0 0 V AC f o r o n e m in u t e

Contextual Info: REV ECN. NO. A EDIQÁO INICIAL B NOVO CÓDIGO APP DATE SPECI FI CATI ON V o l t a g e R a t i n g : 2 5 0 V AC/ DC C u r r e n t R a t i n g : 5A AC/ DC T e m p e r a t u r e Range: - 2 5 * 0 t o + 8 5 *0 C o n t a c t R e s i s t a n c e : 10 Milliohms Max,

Contextual Info: Alle Bechle inrbehallen/ i l l rights r ts tr n i 3 25, A 2 , 5A |x6=115. 2A 1, 27 1, 27 2 , 5A ln r tafaf CsJ CM <T> - l£ > ] YYY P r i n t e d board l ay ou t Component r YY 1, 27 i L 01 j 1. Kon t o k t 1st contact 1er c o n t a c t 2 , 5A 1. Ko n t a k t

T30 rectifier

Abstract: 10FWJ2C11 5GWJ2C41 5FWJ2C41 10GWJ2C11
Contextual Info: 9 0 9 7 2 5 0 T O S H IB A C D IS C R E T E /O P T O " 3 9 C 0 2 3 4 4 d T 1 5 2 s - 0 6 " ' T" RECTIFIER STA CK SQjHOTTKY BARRIER DIODE STACK) "~ 1 h » e I ^ D T T E S O DDQS3 4 H t. | | : Unit in nn 5GWJ2C41 40V 5A ' / MAXIMUM RATINGS / CHARACTERISTIC

Contextual Info: REV ECN. NO. A EDIQÁO INICIAL B NOVO CÓDIGO APP DATE 4,90 SPECIFICATIO N V o l t a g e R a t in g : 2 5 0 V A C/DC C u r r e n t R a t in g : 5A A C/DC T e m p e r a t u r e R a n g e : - 2 5 ° C t o + 8 5 °C C o n t a c t R e s i s t a n c e : 10 M illio h n s Max,

Contextual Info: SGS-THOMSON L6202 IM 0.3Q DMOS FULL BRIDGE DRIVER P R E L IM IN A R Y D A T A • S U P P L Y V O L T A G E UP T O 4 8 V • 5A M A X PEAK C U R R E N T • T O T A L R M S C U R R E N T UP T O 1.5A • R d s o n 0 .3 i2 (T Y P IC A L V A L U E A T 25°C )

5AS4A

Abstract: OF til 81 5AS4
Contextual Info: 5AS4A T E N T A T I V E DATA TUII0-301 - - N TW I N - D I O D E - '£-1 MAX. COATED FILAMENT FI LAMENT 5 VOL TS 3 16 MAX T — 12 3 AMP. AC OR DC VERTICAL MOUNTI NG P O S I T I O N HORI ZONTAL OPERATI ON PER MI T T E D IF

Contextual Info: Data Sheet • Current transformer Current transformer CMA 100/5A Current transformer CMA 250/5A Current transformer CMA 500/5A NEW T h e c u r re n t t r a n s f o r m e r t r a n s f o r m s l a r g e r a l t e r n a t i n g c u r re n t s t o a p ro p o r t i o n a l s e c o n d a r y c u r re n t .

A4661

Abstract: 6an8 tube 6An8 tube data
Contextual Info: TENTATIVE DATA 5A N8 TUNO-SOL TRIODE-PENTODE M IN IA T U R E T Y PE r 8 - C O A T E D UN I P O T E N T I A L — CAT HOD E MAX HEATER !£' 1 16 MAX T-6± 4.7 VOLTS 0.6 AMP. AC OR DC 2 ^ ’ 16 ANY M O U N T IN G P O S I T I O N GLASS BULB MINIATURE BUTTON

regulator ic st 20 pins

Abstract: lour 6MV1500GX LX8384A-XX LX8384B-XX lx838400
Contextual Info: LIN Doc #: 8384 U \F l\I T Y M I C R O E L E C T R O N I C S T H I n f i n i t e P o w e r o f I 5A Low D r o p o u t P o s i t i v e R e g u l a t o r s n n o v a t i o n P r o d u c t i o n DESCRIPTION T h e L X 8384/84A /84B s e rie s ICs a r e p o s i­

Contextual Info: 5 ADP- CATHODE-RAY TUBES T h e T y p e 5A D P- C athode-ray T ub es are flat­ faced electrostatically focused and deflected cath­ ode-ray tubes, designed for applications w here tig h t tolerances and high sensitivity are im por­ tan t. T h e high sensitivity is achieved by th e use

Contextual Info: 2S D 1 8 9 7 Transistors I 2SD 1757K Power Transistor 100V, 5A 2SD1897 •F e a tu re s 1 ) •A b s o lu te maximum ratings (T a = 25Ì5) L o w V c E ( sa t). ( T y p — 0 .3 V a t lc /lB= 3 / 0 .3 A ) 2 ) E x c e l l e n t Fi f e c u r r e n t c h a r a c t e r i s t i c s .

1 watt diode

Abstract: rs tube
Contextual Info: 5AS8 TUNO-SOL DIODE PENTODE M IN IA T U R E T Y P E O U T LIN E DRAWING BASING DIAGRAM J E D E C 6-2 J E D E C 9DS . 675 FOR 750~ GENERAL PURPOSE A P P L IC A T IO N S T- 6 j 1 .9 3 8 MAX C O A TE D U N IP O T E N T IA L C A TH O D E A N Y M O U N T IN G PO S ITIO N

Contextual Info: I SGS-THOM SON G 7 . L6203 iy 0.3 ù DMOS FULL BRIDGE DRIVER P R E L IM IN A R Y D A T A • SUPPLY V O L T A G E UP TO 48V • 5A M A X PE AK C U R R E N T • T O T A L RMS C U R R E N T UP TO 4A • Rd s io n 0.3i2 T Y P IC A L V A L U E A T 25°C) •

Contextual Info: 2. 5 1 3 +0. 5 Insu I a1or Fresh Green 4. 5 ±0 . 1 J V _^ - = * -H Osi CO o '' 0 . 2 to. 0 5 1 0 ±0. 5 De t a 1 o f /T i n / Non - T i n am e t he t i p p l a t i n g p l a t ino BRI 2 2 5A/HB rcl U Matsushita P S - B 12 5Ô2 ( 2)

BUW41B

Abstract: BUW41 2N6771 2N6686 2N6675 BUX31B npn 1000V 100a 2N6671 2N6674 2N6676
Contextual Info: MAXIVOLT SERIES H IGH V O L T A G E /H IG H C U R R E N T S W IT C H IN G T R A N S IS T O R S M AXIVO LT - A series of power transistors fully designed for high voltage switching application. M A X IV O L T S E LE C T O R C H A R T 1A 5A 5A 10A 15A 20A 25A

Contextual Info: Electrical characteristics: REQUIREMENTS Max c u r r e n t rat in g : 2 . 5A Test voltage: 750V R a t e d vo I t a g e : 3 0 0 V C o n t a c t r e s i s t a n c e : < I5 m O h m Shell r e s i s t a n c e : <5 m O h m Insulation resistance>5000 MOhm Technical characteristics:

mxl 5007

Abstract: SR flip flop pr clr table MTL ICC 311 MTL ICC 301 1N3064
Contextual Info: IQ U AL IF I C A T I O N I ! ! , e J K “ de " t s 5A ^ 421A w REMO VE D- [ n i ï ï ï l t i ï ! 3 - MIL-M-38510/42KUSAF 21 Ma rc h 1979 M I L I T A RY S P EC IF IC AT IO N MICROCIRCUITS, DIGITAL, S C HO TT KY TLL, I N PU T/ O U T P U T PORT WITH

Contextual Info: LIN Doc #; 8554 iMFMTYm 5A E x t r e m e l y L ow D r o p o u t P o s i t i v e R e g u l a t o r s M I C R O E L E C T R O N I C S T H I n f i n i t e P o w e r I o f n n o v a t i o n P D r o d u c t i o n DESCRIPTION The LX8554 series ICs are very low drop­

T151

Abstract: TH25 A406
Contextual Info: YG801C04 5A SCHOTTKY BARRIER DIODE I t t J t : Features Insulated package by fully m olding. ><£Vf Low V f * U :» i' Connection Diagram Super high speed sw itching. »T V - * - a W l U S f c f S l i t t High reliability by planer design. i Applications