SY10E404JCTR Search Results

Contextual Info: SY10E404 SY100E404 FINAL QUAD DIFFERENTIAL AND/NAND DESCRIPTION FEATURES • Differential D and Q ■ Extended 100E VEE range of –4.2V to –5.5V 700ps max. propagation delay High frequency outputs Internal 75KΩ input pull-down resistors Fully compatible with Motorola 10E/100E404

SY100E404

Abstract: SY100E404JC SY100E404JCTR SY10E404 SY10E404JC SY10E404JCTR
Contextual Info: * QUAD DIFFERENTIAL AND/NAND SYNERGY SY10E404 SY100E404 SEMICONDUCTOR FEATURES • ■ Differential D and Q ■ Extended 100E V ee range of -4.2V to -5.5V The SY 10/100E404 are 4-bit differential AND/NAND devices. The differential operation of these devices make

Contextual Info: * QUAD DIFFERENTIAL AND/NAND SYNERGY SY10E404 SY100E404 SEMICONDUCTOR FEATURES • ■ Differential D and Q The S Y 10/100E404 are 4-bit differential AND/NAND devices. The differential operation of these devices make them ideal for pulse shaping applications where duty cycle

Z27D

Contextual Info: FEATURES • ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Differential D and Q Extended 100E V e e range of -4.2V to -5.5V 700ps max. propagation delay High frequency outputs Internal 75KQ input pull-down resistors ESD protection of 2000V Fully compatible with Motorola 10E/100E404

100E404

Abstract: SY100E404 SY100E404JC SY100E404JCTR SY10E404 SY10E404JC SY10E404JCTR
Contextual Info: QUAD DIFFERENTIAL AND/NAND DESCRIPTION FEATURES • Differential D and Q ■ Extended 100E VEE range of –4.2V to –5.5V The SY10/100E404 are 4-bit differential AND/NAND devices. The differential operation of these devices make them ideal for pulse shaping applications where duty cycle

Contextual Info: * QUAD DIFFERENTIAL AND/NAND SYNERGY SY10E404 SY100E404 SEMICONDUCTOR FEATURES • ■ Differential D and Q The S Y 10/100E404 are 4-bit differential AND/NAND devices. The differential operation of these devices make them ideal for pulse shaping applications where duty cycle

Contextual Info: * QUAD DIFFERENTIAL AND/NAND SYNERGY SY10E404 SY100E404 SEMICONDUCTOR FEATURES DESCRIPTION Differential D and Q Extended 100E V ee range of -4.2V to -5.5V 700ps max. propagation delay High frequency outputs Internal 75K£i input pull-down resistors ESD protection of 2000V

Contextual Info: * QUAD DIFFERENTIAL AND/NAND SYNERGY SY10E404 SY100E404 SEMICONDUCTOR FEATURES • ■ Differential D and Q The S Y 10/100E404 are 4-bit differential AND/NAND devices. The differential operation of these devices make them ideal for pulse shaping applications where duty cycle

PART MARKING D0B

Abstract: MARKING d2b marking diode D2B SY100E404 SY100E404JC SY10E404 SY10E404JC SY10E404JZ
Contextual Info: • Differential D and Q ■ Extended 100E VEE range of –4.2V to –5.5V The SY10/100E404 are 4-bit differential AND/NAND devices. The differential operation of these devices make them ideal for pulse shaping applications where duty cycle skew is critical. Special design techniques were

SY100E404

Abstract: SY100E404JC SY10E404 SY10E404JC SY10E404JCTR
Contextual Info: * OUAD DIFFERENTIAL AND/NAND SYNERGY S E M IC O N D U C TO R FEATURES W 1„c „ . SY100E404 DESCRIPTION Differential D and Q Extended 100E V e e range of -4 .2 V to - 5 .5 V 700ps max. propagation delay High frequency outputs Internal 7 5 K ii input pull-down resistors