SY10474 Search Results

sy-10

Abstract: SY100474
Contextual Info: SY10/100/101474-3 SY10/100/101474-4 SY10/100/101474-5 SY10474-3/4/5/7 SY10/100/101474-7 SY100474-3/4/5/7 SY101474-3/4/5/7 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3/4/5/7ns max.

Contextual Info: * SY10474-2.5/3/4/5/7 SY100474-2.5/3/4/5/7 SY101474-2.5/3/4/5/7 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION • Address access time, tAA: 2.5/3/4/5/7ns max. ■ Chip select access time, tAC: 2ns max. ■ Write pulse width, tww: 3ns min. ■ Edge rate, tr/tf: 500ps typ.

Contextual Info: * SY10474-5 SY10474-7 1K x 4 ECL RAM SYN ER G Y SEMICONDUCTOR PRELIMINARY 1 FEATURES" •DESCRIPTION! The Synergy SY10474 is a 4096-bit Random Access Memory RAM , designed with advanced Emitter Coupled Logic (ECL) cir­ cuitry. The SY10474 is organized as 1024 words by 4 bits and

SA WA

Abstract: SY101474-4 SY100474 1024-words-by-4-bits
Contextual Info: SY10/100/101474-3 SY10/100/101474-4 SY10/100/101474-5 SY10474-3/4/5/7 SY10/100/101474-7 SY100474-3/4/5/7 SY101474-3/4/5/7 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3/4/5/7ns max.

Contextual Info: * SY10474-3/4/5/7 SY100474-3/4/5/7 SY101474-3/4/5/7 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • Address access time, DESCRIPTION tAA: ■ Chip select access time, 3/4/5/7ns max. tA c : 2ns max. ■ Write pulse width, tww: 3ns min. ■ Edge rate, tr/tf: 500ps typ.

Contextual Info: * SY10474-3/4/5/7 SY100474-3/4/5/7 SY101474-3/4/5/7 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • Address access time, DESCRIPTION tAA: ■ Chip select access time, 3/4/5/7ns max. tA c : 2ns max. ■ Write pulse width, tww: 3ns min. ■ Edge rate, tr/tf: 500ps typ.

tu 20 c synergy

Abstract: 4096 bit RAM nec 10474 SY10474 SY10474-5DCF SY10474-5DCS SY10474-5FCF
Contextual Info: * SY10474-5 SY10474-7 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR PRELIMINARY •DESCRIPTION ■ FEATURES" Address access time, U a : 5/7 ns max. Chip select access time, Uc: 3/5 ns max. Write pulse width, tww: 5/8 ns min. Choice of two edge rates, 800/1500 ps typ.

Contextual Info: * SY10474-3/4/5/7 SY100474-3/4/5/7 SY101474-3/4/5/7 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION • Address access time, tAA: 3/4/5/7ns max. T he S ynergy S Y 10 /1 00 /1 01 47 4 are 4 09 6 -b it Random A ccess M em ories RAM s , designed w ith advanced Em itter

Contextual Info: * SYNERG Y 1KX 4 ECL RAM SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Address access time, U a : 5/6ns max. Chip select access time, tAc: 3/5ns max. Write pulse width, tww: 5/8ns min. Choice of two edge rates: 800 or I500ps typ.

21A95

Abstract: DL3242 3dd237 50-i2
Contextual Info: * S Y 10 474-3/4/5/7 S Y 1 00474-3/4/5/7 S Y 1 0 1474-3/4/5/7 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR F E A TU R E S D E S C R IP T IO N • Address access time, tAA: 3/4/5/7ns max. ■ Chip select access time, tAC: 2ns max. ■ Write pulse width, tww: 3ns min.

Contextual Info: Y ’ 0 4 7 '1 - 3 ' 4 ' 5 / 7 K * 4 ECL ,v -o n 4 M _ 3 /n /5 /7 R A iu ? ¥ 1 n -1 7 /] 3 ;4 /5 /7 F EA TU R E S m Address access time, tAA: 3/4/5/7ns max. Chip select access time, tAC: 2ns max. Write pulse width, tww: 3ns min. Edge rate, tr/tf: 500ps typ.

3DL2

Contextual Info: * 1K SYNERGY S Y 1 0474-3/4/5/7 S Y 1 00474-3/4/5/7 S Y 1 01474-3/4/5/7 4 EC L RAM X S E M IC O N D U C T O R FE A T U R E S • Address access time, D E S C R IP T IO N tA A : ■ Chip select access time, 3/4/5/7ns max. tA C : 2ns max. ■ Write pulse width, tww: 3ns min.

Contextual Info: * S Y N E R G Y 1 K x 4 E C L R A M s î m SEMICONDUCTOR DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Address access time, tAA: 3ns max. Chip select access time, tA c: 2ns max. Write pulse width, tww: 3ns min. Edge rate, tr/tf: 500ps typ.

100474

Abstract: SY100474 SY101474 Y1047
Contextual Info: * SYNERGY SY 10474-3/4/5/7 S Y 1 00474-3/4/5/7 S Y 101474-3/4/5/7 1K X 4 E C L R A M S E M IC O N D U C T O R FEA TU R E S D E S C R IP T IO N • Address access time, tAA: 3/4/5/7ns max. ■ Chip select access tim e, tAC: 2ns max. ■ Write pulse width, tww: 3ns min.