SY 165 Search Results

SMC - SY5120

Abstract: SMC SY313 omron G71-OD16 SY7120 G71-OD16 SY340 431a1 diode sy GVVZS3000-21A-2 19n marking 2 pin diode
Contextual Info: High Capacity & Simple Choices Series SY 5 Port Rubber Seal Solenoid Valve SV SY SYJ SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD VFS VS VS7 VQ7 Series SY9000 newly realased 1.2-1 CE Marking Compliant Products The SY series complies with the EMC Directive and the Low Energy Directive based

Contextual Info: TC74VHC161 F/FN/FS TC74VHC163F/FN/FS SY N C H R O N O U S PRESETTABLE 4 - BIT COUNTER TC74VH C161F / FN / FS BIN ARY, A SY N C H R O N O U S CLEAR TC 74VH C163F/ FN / FS BIN ARY. SY N C H R O N O U S CLEAR The TC74VHC 161 and 163 are advanced high speed CMOS

d1415

Contextual Info: MITSUBISHI LSIs MH64S72AVJG-5,-6 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72AVJG is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard 64M x 4 Sy nchronous DRAMs in TSOP.

MH32S72AVJA-5

Contextual Info: MITSUBISHI LSIs MH32S72AVJA-5,-6 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72AVJA is 33554432 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard 32M x 4 Sy nchronous DRAMs in TSOP.

ICS5311

Abstract: ICODE SLI-S
Contextual Info: NXP ICODE SLI-SY HF RFID smart label IC When long-term data integrity and tailored security counts National archives, university libraries and museums need an identification solution that will last for decades. Offering a guaranteed 40 years data retention, NXPs’ ICODE SLI-SY answers

D1415

Abstract: MH64S72VJG-5
Contextual Info: MITSUBISHI LSIs MH64S72VJG-5,-6 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72VJG is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard 64M x 4 Sy nchronous DRAMs in TSOP.

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS SY Low Impedance & Long Life Series • Features : Low Impedance , high permissible ripple current at high frequency SY and long life than SC Long Life ■ Recommended Applications: SC Used switching requlator applications in computers. Especially for high frequency.

Contextual Info: MEMORY Unbuffered 4 M x 72 BIT r .SY N<'Nil ^rlrÎONOUS> DYNAM IC RAWIIDIMM MB¡8?¡ndç¡072BZ-75/-1QÎ 168-pin, 4 Clock, 2-bank, based on 2 M x 8 Bit SDRAMs with SPD • DESCRIPTION The Fujitsu MB8504S072BZ is afully decoded, CMOS Sy nc hro no usJDynam ic Random Access Memory SDRAM

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT RELEASED FOR PUBLICATION 6 5 4 3 2 2006 LOC ES ALL RIGHTS RESERVED. 2006 1 REVISIONS DIST 00 P LTR B1 57.25 4.1 D DESCRIPTION REVISED ECR-08-013764 DWN APVD 04JUN08 AZ SY C ECR-08-028454 11NOV2008 AL SY D REVISED PER ECO-10-023688

Contextual Info: O K I Semiconductor MSM7510_ 300 bps Full Duplex FSK Modem - ITU-T V.21 GENERAL DESCRIPTION T he M S M 7510 is u sefu l for the IT U -T V .21 m o d em , for exam p les, low co st b uilt-in m o d em s, teleco n tro l sy ste m s, h o m e se cu rity sy stem s, etc.

F100K

Abstract: SY100S304 SY100S304DC SY100S304FC SY100S304JC
Contextual Info: * S Y N E R G Y q u in t a n d /n a n d g a t e sy-io o s304 S E M IC O N D U C T O R FEATURES DESCRIPTION I Max. propagation delay of 1050ps I I e e min. o f-60m A The SY 100S 304 is an ultra-fast quint AN D /N AN D gate designed fo r use in high-perform ance ECL system s. This

Contextual Info: Yageo corporation ELECTROLYTIC CAPACITORS Miniature Aluminum Electrolytic Capacitors SY [ For Low Impedance and Low ESR Suitable for Motherboard Output Termination ] 105°C Single-Ended Lead Aluminum Electrolytic Capacitors for High Frequency Applications

5906 TUBE

Abstract: 5840 TUBE Sylvania 5840 Electron Tubes SVLVAHIA engineering data service 5906 SVLVAHIA engineering data service 5840 subminiature tubes
Contextual Info: SYLVANIA sY iA A M v ^ engineering data service 5906 QUICK REFERENCE DATA M ECHANICAL DATA B u l b . T-3 B a s e .E8-10, Subm iniature B utton Flexible Leads

Contextual Info: Yageo corporation ALUMINUM electrolytic capacitors Miniature Aluminum Electrolytic Capacitors SY [ For Low Impedance and Low E.S.R Suitable for Output of Mother Board ] 105°C Single-Ended Lead Aluminum Electrolytic Capacitors For High Frequency Applications

Contextual Info: YAGEO CORPORATION ALUMINUM ELECTROLYTIC CAPACITORS Miniature Size Aluminum Electrolytic Capacitors SY [ For Low Impedance and Low E.S.R Suitable for Output of Mother Board ] 105qC Single-Ended Lead Aluminum Electrolytic Capacitors For High Frequency Applications

MH64S72QJA

Abstract: MH64S72QJA-6
Contextual Info: MITSUBISHI LSIs MH64S72QJA -6 4,831,838,208-BIT 64,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72QJA is 64108864 - word x 72-bit Sy nchronous DRAM stacked structural module. This consist of thirty -six industry standard 32M x 4

MH32S72BBFA

Abstract: MH32S72BBFA-6
Contextual Info: MITSUBISHI LSIs MH32S72BBFA -6 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72BBFA is 33554432 - word x 72-bit Sy nchronous DRAM stacked structural module. This consist of thirty -six industry standard 16M x 4

MH32S72DBFA

Abstract: MH32S72DBFA-6
Contextual Info: MITSUBISHI LSIs Preliminary Spec. Some contents are subject to change without notice. MH32S72DBFA -6 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72DBFA is 33554432 - word x 72-bit Sy nchronous DRAM stacked structural module. This

MH32S72DBFA

Abstract: MH32S72DBFA-6
Contextual Info: MITSUBISHI LSIs Preliminary Spec. Some contents are subject to change without notice. MH32S72DBFA -6 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72DBFA is 33554432 - word x 72-bit Sy nchronous DRAM stacked structural module. This

MH32S72DBFA

Abstract: MH32S72DBFA-7 MH32S72DBFA-8 D2930
Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH32S72DBFA -7,-8 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72DBFA is 33554432 - word x 72-bit Sy nchronous DRAM stacked structural module. This

DXT170-71-1

Abstract: SYJ314R-5G-Q DXT170 SYJ300-9-1-Q SYJ512M SYJ314R solenoid valve 24v ss3yj3 diode sy 171 sy 171
Contextual Info: 3 Port Solenoid Valve Rubber Seal Series SYJ300/500/700 SY Low power consumption: 0.5W Without light (Current draw: 21mA at 24V DC) Completely interchangeable with the previous series VJ300/500/700 and VZ300/500. Series VZ SYJ300 VJ300 — SYJ500 VJ500 VZ300

ba 663

Abstract: D1112 120k dynamic RAM
Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH28S72PJG -5,-6,-7 9,663,676,416-BIT 134,217,728-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH28S72PJG is 134,217,728 - word x 72-bit Sy nchronous DRAM stacked structural module. This

MH16S72DCFA-6

Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH16S72DCFA-6 1,207,959,552-BIT 16,777,216-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH16S72DCFA is 16777216 - word x 72-bit Sy nchronous DRAM module. This consist of eighteen industry standard

MH8S72DCFD-6

Contextual Info: MITSUBISHI LSIs Preliminary Spec. Some contents are subject to change without notice. MH8S72DCFD-6 603,979,776-BIT 8,388,608-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH8S72DCFD is 8388608 - word x 72-bit Sy nchronous DRAM module. This consist of nine industry standard