SWITHING Search Results

marking a7

Abstract: A7 DIODE marking A7 diode DIODE A7 MA147 swithing
Contextual Info: MA147 SWITHING DIODE Package:SOT-23 High Switching Speed ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Reverse Voltage VR 80 Vdc Peak Repetitive Reverse Voltage VRM 80 V IF 100 Forward Current Single Series Forward Continuous Single Current

2SK2150

Abstract: k2150
Contextual Info: TOSHIBA SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 2 150 SILICON N CHANNEL MOS TYPE TECHNICAL DATA t i -M O STT HIGH SPEED.HIGH CURRENT SWITHING APPLICATIONS. CHOPPER REGULATOR. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS

Contextual Info: TOSHIBA SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 2 150 SILICON N CHANNEL MGS TYPE t i -M O S T T TECHNICAL DATA HIGH SPEED. HIGH CURRENT SWITHING APPLICATIONS. CHOPPER REGULATOR. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS

1SS300

Contextual Info: TOSHIBA 1SS300 1 SS300 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITHING APPLICATION. • • • • Small Package Low Forward Voltage Fast Reverse RecoveryTime Small Total Capacitance 2.1 ± 0.1 : SC-70 : Vjt 3 = 0.92V (Typ.)

SEMTECH MARKING

Abstract: 1SS390
Contextual Info: 1SS390 SILICON EPITAXIAL PLANAR DIODE Band swithing diode PINNING FEATURES Extremely small surface mounting type. ● 1 Cathode 2 Anode High reliability. ● DESCRIPTION PIN 2 1 . WC Top View Marking Code: "WC" Simplified outline SOD-523 and symbol APPLICATIONS

RTGN14BAP

Abstract: 4503 swithing rtgn14
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN14BAP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN14BAP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R2=10kΩ） ● High collector current IC=1A

RTGN131AP

Abstract: 4503 rtgn131
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN131AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN131AP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=1kΩ,R2=1kΩ） ● High collector current IC=1A

Contextual Info: Ordering number:EN5051 FX208 N-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Very high-speed switching. · 2.5V drive. unit:mm 2121 [FX208] Swithing Time Test CIrcuit 1:No Contact 2:Gate

morocco tip32c

Abstract: TIP32C malaysia tip32c TIP31c PNP Transistor st 393 JESD97 TIP31C
Contextual Info: TIP32C Power transistor Applications • . Linear and swithing industrial equipment Description The TIP32C is a silicon Epitaxial-base PNP power transistor in Jedec TO-220 plastic package. It is intented for use in medium power linear and switching applications.

2N6493

Abstract: npn DARLINGTON 10A
Contextual Info: Inchange Semiconductor Product Specification 2N6493 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·High DC current gain ·DARLINGTON APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 2SA1012 TRANSISTOR Plastic-Encapsulate Transistors PNP FEATURES HIGH CURRENT SWITCHING APPLICATIONS. . Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A . High Speed Swithing Time : tstg = 1.0us (Typ.)

2N6492

Contextual Info: SavantIC Semiconductor Product Specification 2N6492 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·High DC current gain ·DARLINGTON APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications

2N6494

Contextual Info: SavantIC Semiconductor Product Specification 2N6494 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·High DC current gain ·DARLINGTON APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications

1SS270

Abstract: marking code 2 SOD523
Contextual Info: 1SS270 SILICON EPITAXIAL PLANAR DIODE Band Swithing Diode Features • Extremely small surface mounting type • High reliability PINNING DESCRIPTION PIN Applications • High frequency switching 1 Cathode 2 Anode 2 1 K Top View Marking Code: "K" Simplified outline SOD-523 and symbol

Contextual Info: GI910 THRU GI917 SOFT RECOVERY, MEDIUM-SWITHING PLASTIC RECTIFIER VOLTAGE - 50 to 800 Volts CURRENT - 3.0 Amperes FEATURES D 0 -2 0 1 A D . 2 1 0 5 . 3 .190 ( 4 . 8 ) D IA . L 1 . 0 ( 2 5 .4 ) M IN. ♦ High surge current capability ♦ Plastic package has Underwriters Laboratory

1N4148 1206

Abstract: 1N4148 0603 1N4148 0805 1n4148 LL34 RM 1206 FHD4148 DIODE CHIP 1N4148 DIODE 1N4148 LL-34
Contextual Info: THICK FILM CHIP SWITHING DIODE THICK FILM CHIP SWITCHING DIODE FEATURES ROHS RoHS compliant 1N4148 The electrical performance is equal as that of 1N4148. Available for mass production,can help to reduce cost. With improved chip shape which can effectively reduce the pick up error during high speed SMT.

MA2DF22

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA2DF22 Silicon mesa type For high frequency retification (Second rectification in swithing mode power supply) • Package  Features M Di ain sc te on na tin nc

MBR15200

Abstract: MBR15200CT MBR15150CT
Contextual Info: MBR15150CT-MBR15200CT Schottky Barrier Rectifiers Reverse Voltage: 150-200V Forward Current: 15A 2.8± 0.1 TO-220AB Features 1.4± 0.2 19.0± 0.5 Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop, low swithing losses

2SA1012

Abstract: 50V 1A PNP power transistor
Contextual Info: 2SA1012 PNP TO-220 Transistor TO-220 1. BASE 2. COLLECTOTR 3. EMITTER Features — 1 2 3 HIGH CURRENT SWITCHING APPLICATIONS. Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A High Speed Swithing Time : tstg = 1.0us (Typ.) Complementary to 2SC2562

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA2DF22 Silicon mesa type For high frequency retification (Second rectification in swithing mode power supply) • Package  Features  Code TO-220D-B1  Pin Name

on 222 transistor

Abstract: 4503 ISAHAYA Diagrams
Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 RTGN226AP TRANSISTOR WITH RESISTOR FOR SWITHING APPLICATION SILICON NPN EPITAXIAL TYPE DISCRIPTION RTGN226AP is a one chip transistor with built-in bias transistor. FEATURE ● Built-in bias resistor （R1=0.22kΩ,R2=2.2kΩ）

1SS390

Contextual Info: 1SS390 SILICON EPITAXIAL PLANAR DIODE Band swithing diode PINNING FEATURES Extremely small surface mounting type. ● High reliability. ● DESCRIPTION PIN 1 Cathode 2 Anode 2 1 . WC Top View Marking Code: "WC" Simplified outline SOD-523 and symbol APPLICATIONS

Contextual Info: 1SS300 TO SHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS300 ULTRA HIGH SPEED SWITHING APPLICATION. • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-70 : Vp 3 = 0.92V (Typ.) : trr = 1.6ns (Typ.)

d1609c

Abstract: SFT1203 d1609 A1403 ITR07218 ITR07219 ITR07220 ITR07221 ITR07222
Contextual Info: SFT1203 Ordering number : ENA1403 SANYO Semiconductors DATA SHEET SFT1203 NPN Triple Diffused Planar Silicon Transistor Swithing Regulator Applications Features • High breakdown voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage