SWITCHING TRANSISTOR 331 Search Results

Contextual Info: 2N5005 Silicon PNP Transistor Data Sheet Description Applications • High-speed power-switching • Power Transistor • PNP silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5005J

Contextual Info: 2N5002 Silicon NPN Transistor Data Sheet Description Applications Complement to the 2N5003 • High-speed power-switching • Power Transistor • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E

Contextual Info: 2N5004 Silicon NPN Transistor Data Sheet Description Applications • High-speed power-switching • Power Transistor • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5004J

Contextual Info: 2N5005 Silicon PNP Transistor Data Sheet Description Applications Complement to the 2N5004 • High-speed power-switching • Power Transistor • PNP silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E

2N5002

Abstract: 2N5002J 2N5002JV 2N5002JX 2N5003
Contextual Info: 2N5002 Silicon NPN Transistor Data Sheet Description Applications Complement to the 2N5003 • High-speed power-switching • Power Transistor • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E

2N5004

Abstract: 2N5005 2N5005J 2N5005JV 2N5005JX
Contextual Info: 2N5005 Silicon PNP Transistor Data Sheet Description Applications Complement to the 2N5004 • High-speed power-switching • Power Transistor • PNP silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E

2N5002

Abstract: switching transistor 331 2N5003 2N5003J 2N5003JV 2N5003JX
Contextual Info: 2N5003 Silicon PNP Transistor Data Sheet Description Applications Complement to the 2N5002 • High-speed power-switching • Power Transistor • PNP silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E

2N5004

Abstract: 2N5004 JANTXV NPN/transistor C 331 switching transistor 331 2N5004J 2N5004JV 2N5005
Contextual Info: 2N5004 Silicon NPN Transistor Data Sheet Description Applications Complement to the 2N5005 • High-speed power-switching • Power Transistor • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E

Contextual Info: 2N5003 Silicon PNP Transistor Data Sheet Description Applications • High-speed power-switching • Power Transistor • PNP silicon transistor SEMICOA Corporation offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5003J • JANTX level (2N5003JX)

CPH5516

Contextual Info: CPH5516 Ordering number : ENA0196 CPH5516 PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications • Relay drivers, Lamp drivers, Motor drivers, IGBT gate drive. Features • • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density

Contextual Info: NGTB30N120L2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited

transistor BU 102

Abstract: transistor application transistor K 903 T-33-13 br 903 t33-13 ZC125 AEG v 300
Contextual Info: A E G CORP 1?E D □ Q S T HS t a QGGTSQB T BU 903 electronic CreatviTechnotogies T- 33-13 Silicon NPN Power Transistor Application: Switching mode power supply Features: • In triple diffusion technique • Short switching time • Glass passivation • Power dissipation 125 W

Contextual Info: 2SC4521 Ordering number : EN3140B SANYO Semiconductors DATA SHEET 2SC4521 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.

Contextual Info: 2SA1730 Ordering number : EN3134A SANYO Semiconductors DATA SHEET 2SA1730 PNP Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.

Contextual Info: International pd-9.1628 IGR Rectifier IRG4 PC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

Contextual Info: SSM6P54TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P54TU ○ High-Speed Switching Applications ○ Power Management Switch Applications • : Ron = 555 mΩ max (@ VGS = -1.5 V) Pb free Characteristics Symbol Rating Unit Drain-Source voltage

2N5005 TO-59

Abstract: 2N5005
Contextual Info: Data Sheet No. 2N5005 Generic Part Number: 2N5005 Type 2N5005 Geometry 9702 Polarity PNP Qual Level: JAN - JANTXV REF: MIL-PRF-19500/512 Features: • • • • Silicon power transistor for use in high speed power switching applications. Housed in a TO-59 case.

SSM6P54TU

Contextual Info: SSM6P54TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P54TU ○ High-Speed Switching Applications ○ Power Management Switch Applications 2.1±0.1 1.5 V drive Suitable for high-density mounting due to compact package Low on-resistance : Ron = 228 mΩ max (@ VGS = -2.5 V)

SSM3J114TU

Contextual Info: SSM3J114TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J114TU ○ High-Speed Switching Applications ○ Power Management Switch Applications • • Unit: mm 1.5 V drive Low on-resistance 2.1±0.1 Ron = 526 mΩ max (@ VGS = -1.5 V) Ron = 149 mΩ (max) (@ VGS = -4.0 V)

TRANSISTOR C483

Abstract: IRGPH50MD2
Contextual Info: International S Rectifier PD - 9.1047A IRGPH50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces — 1200V Short circuit rated -1 0 j s @125°C, VGe= 15V Switching-loss rating includes all "tail" losses

2N3738

Abstract: 3302N
Contextual Info: * 2 N 3738 NPN SILICON TR AN SISTO R , D IFFU SED M ESA TRANSISTOR NPN SILICIUM, MESA DIFFUSE Preferred device Dispositif recommandé L F large signal power amplification Amplification B F grands signaux de puissance 225 V v C EO High voltage switching Commutation haute tension

bux23

Contextual Info: • 7 ^ 5 ^ 5 3 7 P O S A I S 7 ■ 5 S G S -T H O M S O N lailllBiQglLllETfBQHniES_ BUX23 S G S-THOMSON 3QE D NPN SILICON TRANSISTOR D E S C R IP T IO N High speed, high current, high power NPN transis­ tor intended for use in switching and amplifier appli­

Contextual Info: WL 4-2 W L 4-2 F 331 -E 331 W L 4-2 F 132 -E 132 F Range 2.8 m ¥ •M -12 Features: • Red light sender LED to assist with setting-up • Polarisation filte r which enables recognition o f objects w ith glossy surfaces Adjustment aided by LED signal strength indicator

transistor h 331

Abstract: c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm
Contextual Info: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features