SWITCH DIODE UHF Search Results

Contextual Info: SIEMENS Silicon RF Switching Diode BAT 18 . • Low-loss VHF/UHF switch above 10 MHz • Pin diode with low forward resistance Type Marking Ordering Code Pin Configuration Package1 BAT 18 A2 Q62702-A787 SOT 23 °- ^ ^ 1-ÍHA07002 BAT 18-04

Contextual Info: BAT18. Silicon RF Switching Diode • Low-loss VHF / UHF switch above 10 MHz • PIN diode with low forward resistance • Pb-free RoHS compliant package BAT18-04 BAT18-05 ! ,  ! ,  ,  ,  Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series

BAT18

Abstract: ASs infineon
Contextual Info: BAT18. Silicon RF Switching Diode • Low-loss VHF / UHF switch above 10 MHz • PIN diode with low forward resistance • Pb-free RoHS compliant package BAT18-04 BAT18-05 ! ,  ! ,  ,  ,  Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series

NTE583

Contextual Info: NTE583 Silicon Rectifier Diode Schottky, RF Switch Description: The NTE583 is a metal to silicon junction diode featuring high breakdown, low turn–on voltage and ultrafast switching. This device is primarly intented for high level UHF/VHF detection and pulse application with broad dynamic range.

bat18 diode

Abstract: BAT18 marking AUs BAT18-05 AUS SOT23 BAT18-04 BCW66 ASS infineon
Contextual Info: BAT18. Silicon RF Switching Diode • Low-loss VHF / UHF switch above 10 MHz • PIN diode with low forward resistance • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAT18-04 BAT18-05 ! ,  ! ,  ,  ,  Type BAT18-04 BAT18-05 Package

diode varactor mv201

Abstract: construction of varactor diode diode varactor mitsubishi MV201 3lu2 varactor diode parameter UJ103 D0154D5 "Varactor Diode" 50MHZ
Contextual Info: MITSUBISHI DISCRETE SC blE D • b E ^ H Û ^ 0015404 ITA « H I T S ANTENNA SWITCH MV 2 0 1 VARACTOR DIODE DESCRIPTION OUTLINE DRAWING The MV201 varactor diode is employing a high reliability glass, construction designed fo r AFC in VHF UHF. Dimension mm

EHA07005

Abstract: EHA07002
Contextual Info: SIEM ENS Silicon RF Switching Diode BAT 18. • Low-loss VHF/UHF switch above 10 MHz • Pin diode with low forward resistance Type Marking Ordering Code BAT 18 A2 Q62702-A787 Pin Configuration Package1 SOT 23 0- EH1-» EHA07002 BAT 18-04 AU Q62702-A938

hp11612a

Abstract: anzac power divider HP8565A HP83595A HP8565 HP436A HP8640B Microwave PIN diode pin diode microstrip 0805Z473
Contextual Info: A Low Distortion PIN Diode Switch Using Surface Mount Devices Application Note 1049 Abstract One of the practical applications of the surface mount‑ ed PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is gen‑

MI204

Contextual Info: b E M T fiS 1} GD1 7 7 2 7 222 • ANTENNA SWITCH MI204 PIN DIODE DESCRIPTION OUTLINE DRAWING The M I204 PIN diode is employing a high reliability glass construction designed for RF small signal attenuator in V H F UHF. FEATURES ] ii • Long carrier lifetime

1SS103

Contextual Info: NEC SILICON SWITCHING DIODE ELECTRON DEVICE I S S I 03 UHF/VHF Electronic Tuner & VHF Low, High Ch. Switch SILICON EPITAXIAL PLANAR DIODE FEATURES PACKAGE DIMENSIONS • Low series resistance rs. ¡n millimeters inches • Low leakage current. IR S 5 0 n A at V r = 3 0 V

A940

Abstract: a940 Transistor transistor a940 DIODE BAT Q62702-A940 BAT18 A938 A942 Q62702-A787 Q62702-A938
Contextual Info: BAT 18 Silicon RF Switching Diode BAT 18 … ● Low-loss VHF/UHF switch above 10 MHz ● Pin diode with low forward resistance Type Marking Ordering Code Pin Configuration Package1 BAT 18 A2 Q62702-A787 SOT 23 BAT 18-04 AU Q62702-A938 BAT 18-05 AS Q62702-A940

BAT18

Contextual Info: BAT18. Silicon RF Switching Diode • Low-loss VHF / UHF switch above 10 MHz • PIN diode with low forward resistance BAT18-04 BAT18-05 ! ! ,  ,  ,  ,  Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode Maximum Ratings at TA = 25°C, unless otherwise specified

HP8640B

Abstract: HP83595A HSMP-3880 HP11612A HP436A HSMP-3820 HSMP-3830 HSMP-3890 HP8565
Contextual Info: A Low Distortion PIN Diode Switch Using Surface Mount Devices Application Note 1049 Abstract One of the practical applications of the surface mounted PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is generally treated as a current controlled

hp11612a

Abstract: HP8640B HP8565A HP436A HP83595A HSMP-3820 Microwave PIN diode HSMP-3830 HSMP-3880 HSMP-3890
Contextual Info: A Low Distortion PIN Diode Switch Using Surface Mount Devices Application Note 1049 Abstract One of the practical applications of the surface mounted PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is generally treated as a current controlled

BAT18

Abstract: ASS infineon
Contextual Info: BAT18. Silicon RF Switching Diode
Low-loss VHF / UHF switch above 10 MHz
PIN diode with low forward resistance BAT18-04 BAT18-05 3 3 D 1 D 2 D 1 1 2 1 D 2 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS nH Marking

BAT18

Abstract: ASS infineon
Contextual Info: BAT18. Silicon RF Switching Diode
Low-loss VHF / UHF switch above 10 MHz
PIN diode with low forward resistance BAT18-04 BAT18-05 3 3 D 1 D 2 D 1 1 2 1 D 2 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS nH Marking

BAT18

Abstract: BAT18-05 BAT18-04
Contextual Info: BAT18. Silicon RF Switching Diode
Low-loss VHF / UHF switch above 10 MHz
PIN diode with low forward resistance BAT18-04 BAT18-05 3 3 D 1 D 2 D 1 1 2 1 D 2 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS nH Marking

VPS05604

Abstract: DIODE A3 C4 marking diode A4 marking diode diode marking a4 A4 SOT363 switch marking A3 A3 DIODE diode MARKING A3 marking 5a3
Contextual Info: BAT 18-04S Silicon PIN Diode Preliminary data 4 5
Low-loss VHF / UHF switch above 10 MHz 6
PIN diode with low forward resistance 2 3 1 C1/A2 C3 A4 6 5 4 D2 D1 VPS05604 D4 D3 1 2 3 A1 C2 A3/C4 EHA07464 Type Marking BAT 18-04S AVs Pin Configuration Package

Contextual Info: HSK110-Silicon Epitaxial Planar Diode for UHF/VHF Tuner Band Switch Features Outline • Low forward resistance, rf = 0.9Q max • LLD package is suitable for high density surface mounting and high speed assembly. Ordering Information

1SS277

Abstract: C 461
Contextual Info: 1SS277-Silicon Epitaxial Planar Diode for UHF/VHF Tuner Band Switch Features Outline • Low forward resistance, rf = 0.5Q max • Ultra small glass package (UMD) enables easy mounting and high reliability. = 2nd band Cathode band

top marking c2 sot23

Abstract: marking a2s sot-23 sot-23 Marking c1 AUS SOT23 sot23 marking a2 DIODE BAT EHA07002 top marking ATS sot23 marking 04 sot-23 marking a1 sot23
Contextual Info: BAT 18 . Silicon RF Switching Diode 3 • Low-loss VHF / UHF switch above 10 MHz • PIN diode with low forward resistance 2 1 BAT 18 BAT 18-05 BAT 18-04 1 3 1 2 3 1 2 EHA07005 EHA07002 BAT 18-06 3 3 VPS05161 1 2 EHA07006 EHA07004 Type Marking Pin Configuration

Contextual Info: HSC277-Silicon Epitaxial Planar Diode for UHF/VHF Tuner Band Switch Features Outline • Low forward resistance. rp0.7£l max • Ultra small Elat package (UFP) is suitable for surface mount design. Cathode mark c| Ordering Information

HSK277

Contextual Info: HSK277-Silicon Epitaxial Planar Diode for UHF/VHF Tuner Band Switch Features Outline • Low forward resisiance. rf = 0.5Q max Cathode band • LLD package is suitable for high density surface mounting and high speed assembly. 12nd. band

Contextual Info: HSU277 Silicon Epitaxial Planar Diode for UHF/VHF tuner Band Switch HITACHI Features • Low forward resistance. rf = 0.7i2max • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code