SW 7 N 60 Search Results

SW-7510

Abstract: SW 1010 7510A AD7510DI AD7511DI SW-7511 15V1
Contextual Info: - 284- SW-7510, SW-7511 S P S T JF E T .7 K SPST ¡tiffin JF E T » jg c 0 7 -» -n 7' •7 .-f S\V 751(1 (± •»Bif ( D y , n j : Low) M » . SW -7510 t ± Æiëf If] M Ï& « S ■* ^ -y ^-\ï 7> - 7 ■ ■/ -i 5 'íífF 'e , í v B t l í T + n 7~A/Jfa ç W sH 'C lïiï

SW-7510

Abstract: SW-7511B AD7510DI AD7511DI SW-7511
Contextual Info: - 284- SW-7510, SW-7511 S P S T JF E T .7 K SPST ¡tiffin JF E T » jg c 0 7 -» -n 7' •7 .-f S\V 751(1 (± •»Bif ( D y , n j : Low) M » . SW -7510 t ± Æiëf If] M Ï& « S ■* ^ -y ^-\ï 7> - 7 ■ ■/ -i 5 'íífF 'e , í v B t l í T + n 7~A/Jfa ç W sH 'C lïiï

Contextual Info: a/7 A M P com pany GaAs SPDT Terminated Switch DC - 2.5 GHz SW-337, SW-338, SW-339 V2.00 Features SO-8 PIN i H H H • V ery Low P o w er C onsum ption: 7 5 pW O rientation m ark PIN 1— • Low In sertio n Loss: 0 .5 dB • H igh Isolation: 33 dB up to 2 GH z SW -337, SW -338

Contextual Info: 3 .4 -3 .7 GHz A n te n n a In p u ts . All antenna V SW R values are specified with 7/8" EIA connectors. Other optional inputs may result in equal or slightly higher V SW R . Contact Andrew for details. P re s s u riza tio n . Feeds are pressurizable to 10 lb/in2 70 kPa .

Contextual Info: SW SW-313 Matched GaAs SPDT Switch, DC - 3 GHz with TTL/CMOS Control Input Features V 4.00 CR-9 n Integral TTL Driver n Low DC Power Consumption n Fast Switching Speed: 7 ns Typical n Surface Mount Package n 50 Ohm Nominal Impedance n MIL-STD-883 Screening Available

Contextual Info: r z 7 * 7 # S C S TH O M S O N ^ D i© [lL i g f[ 1@iD 0 i B Y T 3 0 P I-600/800 FAST RECOVERY RECTIFIER DIODES • ■ ■ . ■ HIGH REVERSE VOLTAGE CAPABILITY VERY LOW REVERSE RECOVERY TIME VERY LOW SW ITCHING LOSSES LOW NOISE T U R N -O F F SW ITCHING

50BO

Abstract: sje transistor
Contextual Info: 1DI5OMA-O5O 50a / < 7 \= 7 - POWER TRANSISTOR MODULE : Features • hF E *'' '-' High DC Current Gain • 7.4 y 7 KA^iSv.' • JfiiSifli Insulated Type High speed sw itching • E l i Ê : A p p lic a tio n s Power Sw itching • ?;/u— Mot or Brake in Inverter

VT04

Contextual Info: 1/2 VCOs For Cellular Phone QVC511752RT-5079 for N-CDMA(IS95/CDMA2000) SHAPES AND DIMENSIONS 8 5079 MA 6 5.0±0.2 2 4 7 7 3 8 6 3.4±0.2 1 2 3 4 5 6 7 8 Output GND SW (ON/OFF) GND Frequency tuning GND Power supply GND SWITCHING LOGIC 5 SW logic Low High

QVC5

Abstract: QVC502330RT-5019 QVC511752RT-5079 QVC511
Contextual Info: 1/2 VCOs For Cellular Phone QVC511752RT-5079 for N-CDMA(IS95/CDMA2000) SHAPES AND DIMENSIONS 8 5079 MA 6 5.0±0.2 2 4 7 7 3 8 6 3.4±0.2 1 2 3 4 5 6 7 8 Output GND SW (ON/OFF) GND Frequency tuning GND Power supply GND SWITCHING LOGIC 5 SW logic Low High

Contextual Info: r Z 7 SGS-THOMSON ^ 7# BYT 60-600/800 [»g^KÂBOTIHMOÛS FAST RECOVERY RECTIFIER DIODES . VERY LOW REVERSE RECOVERY TIME . VERY LOW SW ITCHING LOSSES • LOW NOISE TURN-O FF SW ITCHING S U IT A B L E A P P L IC A T IO N S ■ FREE W HEELING DIODE IN CONVERTERS

2SK294

Abstract: 2SK295
Contextual Info: HITACHI/{OPTOELECTRONICS} 73 149620b HI TACHI"/ ÖPTOELECTRÜM ICS — D e J M4'ikiED5 DDDTTTE 7 3 C 09992 D 2SK294,2SK295 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER • FEATURES -• • Low O n-Resistance. High Speed Sw itching.

wifi 2.4ghz DETECTOR CIRCUIT DIAGRAM

Abstract: SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER RFFM3482Q wifi amplifier circuit diagram
Contextual Info: RFFM3482Q 2.4GHz to 2.5GHz, Automotive WiFi Front End Module BT  RXBP GND ANT 11 RX SW 3 10 TX SW 9 5 VB 6 7 8 PDET PAEN 4 Automotive WiFi Diagnostic Data Infotainment 12 BTH SW GND 2 Applications  13 PABC Single Voltage Supply 3.3V to 4.2V Integrated 2.5GHz b/g/n

Contextual Info: r z 7 ^7# S G S - T H O M S O N [MStiftmiiOTMigS BYT 3 0 P I-2 0 0 ^ 4 0 0 FAST RECOVERY RECTIFIER DIODES VERY LOW REVERSE RECOVERY TIME VERY LOW SW ITCHING LOSSES LOW NOISE TURN-OFF SW ITCHING INSULATED : Capacitance 15pF SUITAB LE A P P L IC A T IO N S • FREE WHEELING DIODE IN CONVERTERS

BU326s

Contextual Info: S G S - T H O M S ON D7E » I J 1 2 i 2 3 7 Ü Q 1 7 Q 7 B ^ 1^ 67C 1^9 7 5 D 33 ^ J-Ì BU326S MULTIEPITAXIAL MESA NPN HIGH VO LTAGE POW ER SW ITCH The BU 3 2 6 S is a silicon multiepitaxiai N P N transistor in Jedec TO-3 metal case, par­ ticularly intended for sw itch-m ode C T V applications.

Si4830

Abstract: china lcd tv schematic diagram
Contextual Info: Si 4 8 2 7 - A10 B ROADCAST A N A L O G TUNING D IGITAL D ISPLAY AM/FM/SW R ADIO R ECEIVER Features  Worldwide FM band support  64–109 MHz Worldwide AM band support  (504–1750 kHz)  SW band support (2.3–28.5 MHz) Selectable support for all AM/FM/SW 

723 triac

Abstract: bta 116 Triac BTB12 600 B BTA12 BTB12 BTB12SW T0220AB btb 36
Contextual Info: Æ 7 S C S -m O M S O N M g[S EIUI(STr®s R3D i BTA12 SW BTB12 SW LOGIC LEVEL TRIACS FEATURES • LOW Ig t = 10mA max . HIGH EFFICIENCY SWITCHING ON COMMU­ TATION ■ BTA Family : INSULATING VOLTAGE = 2500V(rms) (UL RECOGNIZED : E81734) DESCRIPTION The BTA/BTB12 SW Triac family are high perform­

TFK 626

Abstract: 3 TFK 140 tfk 731 6MBP50NA060-01 T100 T151 TFK 03 BP50N
Contextual Info: FUJI B tB ts ir O Q O Ë ea = .3 .-7 n # < 7 h Fuji New Semiconductor Products 600V / 50A / 6 « I 6MBP50NA060-01 I i# H F e a tu re s 7 V 7 v • f& y I- — £ n m m ^ L w sw itching-surge and noise L )w pow er loss High reliability Maximum ratings and characteristics

buv51

Contextual Info: 7^537 0056751 S • " T 7 3>'3>"13 S C S -T H O M S O N IIL U m * ! S G S-TH0MS0N B U V 51 30E D FAST SWITCHING POWER TRANSISTOR ■ FAST SW ITCHING TIMES ■ LOW SW ITCHING LOSSES ■ VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERA­ TION

230P

Abstract: OA41
Contextual Info: r z 7 S C S -T H O M S O N ^ 7# B Y T 2 3 0 P I V - 2 0 0 - ^ 4 0 0 FAST RECOVERY RECTIFIER DIODES • . ■ ■ VER Y LOW REVERSE RECOVERY TIME VER Y LOW SW ITCHING LOSSES LOW NOISE TURN-OFF SW ITCHING INSULATED : Capacitance 45pF Insulating voltage 2500

SP249

Abstract: sgsp248 sgsp349 P249 P349 sgsp348 SGSP148
Contextual Info: S G S-TH O nSO N 73C 0 7 E 1 7 3 2 4" D D | 7 ^ 5 3 7 r - 3 ? - 0 0 1 7 0 2 7 0 7 > ^ Ì T l l Ì ? r'SGSP1487ÌP149 SGSP248/P249 SGSP348/P349 |*^ * N-CHANNEL POWER MOS TRANSISTORS " - ' - l i HIGH SPEED SW ITCHING APPLICATIONS ABSOLUTE M A X IM U M RATINGS

2SD1617

Abstract: 2sb111 2SB1116 2SB1116A 2SB1119 2SB1120 2SB1121 2SB1122 2SB1123 2SB1124
Contextual Info: - 76 - Ta=25^,*03{ÎTc=25t ít S Veso Vc e o (V) (V) IC(DC) (A) Pc* (W) (W) 2SB11Í5A a n L F PA -80 2SB1116 BU LF PA/ MS S W -60 - 50 -1 2SB1116A s LF PA/ MS SW - 80 -60 -1 2SB1U7 BM LF PA/ MS SW -30 -25 -3 1 2SB1U8 H # L F PA -20 -15 -0. 7 0. 5 n -60

SGSP157

Contextual Info: S G S-THOîISON D7E » | 7 ^ 5 3 7 001704b S ,. « 73C 1 7 3 4 3 D 7— 3 f ' O / i SGSP157 j SGSPI58 . ] N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field

Contextual Info: an A M P com pany GaAs SPDT Switch DC-4 GHz SW-226/227/228 V 2.01 CR-2 Features • M iniature C eram ic P ac k a g e 0.260 " 6 .6 0 ' • T e rm in a te d (SE-226), H igh Iso latio n (SW 227), Low Loss (SW -228) 0.005 t .002 TYP (0.13 ±0 .05) 7 Places

transistor BC 667

Abstract: TO-8-090 2N 6674 2N6675
Contextual Info: 2N6674, 2N6675 File N u m b e r 10-A Sw itchM ojr Power Transistors 1164.1 T E R M IN A L D E S IG N A T IO N S High-Voltage N -P -N Types for O ff-Line Power Supplies and O ther High-Voltage Sw itching Applications 2N6674 2N6675 »2CS- 2 7 5 I« J E D E C T Q -2 0 4 A A