SUSUMU MARKING Search Results

CPA2512

Contextual Info: CPA2512 Series Chip Power Resistors Using the Thermal Performance Plots CPA2512 Series Chip Power Resistors Using the Thermal Performance Plots SUSUMU CO., LTD. Rev. 1.0, Aug 2008 CPA2512 Series Chip Power Resistors A thermal performance plot is a detailed derating

IPC4101

Contextual Info: Product Family: RF Power Chip Resistor Part Number: CF*2512E50R0FS Susumu World Group Construction: • 99.5% BeO or High Purity Alumina • Nickel alloy thin-film resistive element • Epoxy-resin overcoat • Pre-tinned Sn100, matte terminations over Ni barrier is standard

2512E50R0JS

Contextual Info: Product Family: RF Power Chip Resistor Part Number: CF*2512E50R0JS Susumu World Group Construction: • BeO or High Purity Alumina • Nickel alloy thin-film resistive element • Epoxy-resin overcoat • Pre-tinned Sn100, matte terminations over Ni barrier is standard

IPC-4101

Abstract: ipc4101 B25-12 res chip 2w 2512 EIA-638 106G 208H 210F JESD22-B102D J-STD-002B
Contextual Info: Product Family: Chip Power Resistor Part Number Series: CP*2512*####FS Standard CP*2512, CP*2525 shown in image Susumu World Group Construction: • 99.5% BeO or High Purity Alumina • Nickel alloy thin-film resistive element • Epoxy-resin overcoat • Pre-tinned Sn100, matte terminations

RCR-2121

Abstract: Susumu Marking JIS C 5201-1 RR0306 quan-tech 315b
Contextual Info: 2/13 （Unit ）mm L a Code letter Dimension mm L 0.6±0.05 W 0.3±0.05 t 0.23±0.03 a 0.12±0.05 b 0.12±0.05 u1 0.03 max u2 0.03 max W a ② ③ t ① b ④ u1 b u2 W L Fig.1 Construction and dimensions NOTE : ① Resistive element ② Electrode ③ Protective coat

Susumu Marking

Abstract: Susumu Date Code SUSUMU Susumu Date Code ON THE PACKAGING bt5 marking code RCR-2121 RR0816 17 21 110 1102 marking
Contextual Info: 2/16 （Unit ）mm L a W a ② Dimension mm 1.60±0.2 0.80±0.2 0.4±0.1 0.3±0.2 0.3±0.2 ③ t ① Code letter Ｌ Ｗ ｔ ａ ｂ b ④ b Fig.1 Construction and dimensions NOTE : ① Resistive element ② Electrode ③ Protective coat ④ Substrate TITLE:

Susumu Date Code

Abstract: Susumu Date Code ON THE PACKAGING bt5 marking code Susumu Marking RCR-2121 RR0816 JIS adhesion glue S/Susumu Date Code
Contextual Info: 2/16 （Unit ）mm L a W a ② Dimension mm 1.60±0.2 0.80±0.2 0.4±0.1 0.3±0.2 0.3±0.2 ③ t ① Code letter Ｌ Ｗ ｔ ａ ｂ b ④ b Fig.1 Construction and dimensions NOTE : ① Resistive element ② Electrode ③ Protective coat ④ Substrate TITLE:

Susumu Marking

Abstract: RCR-2121 RR1220
Contextual Info: 2/14 （Unit ）mm L a W a ② Dimension L 2.0±0.2 W 1.25±0.2 t 0.4±0.1 a 0.4±0.2 b 0.4±0.2 ③ t ① Code letter b ④ b Fig.1 Construction and dimensions NOTE : ① Resistive element ② Electrode ③ Protective coat ④ Substrate Nichrome alloy thin film

RR1220

Abstract: Susumu Date Code Susumu Date Code ON THE PACKAGING RCR-2121 Susumu Marking
Contextual Info: 2/14 （Unit ）mm L a W a ② Dimension L 2.0±0.2 W 1.25±0.2 t 0.4±0.1 a 0.4±0.2 b 0.4±0.2 ③ t ① Code letter b ④ b Fig.1 Construction and dimensions NOTE : ① Resistive element ② Electrode ③ Protective coat ④ Substrate TITLE: Specification for

RCR-2121

Abstract: RR0510
Contextual Info: 2/13 （Unit ）mm L a Code letter Dimension mm L 1.0±0.05 W 0.5±0.05 t 0.35±0.05 a 0.20±0.10 b 0.25±0.05 u1 0.05 max u2 0.05 max W a ② ③ t ① b b ④ u1 u2 W L Fig.1 Construction and dimensions NOTE : ① Resistive element ② Electrode ③ Protective coat

Susumu Marking

Contextual Info: 1/13 1. Scope This specification applies to 3 .7 5 X 2 .0 0 m m 1 /2 W fixed metal film low resistance value chip resistors rectangular type. 2. Type Designation RL 3720 1 (2) □ - %%%% (3) - □ (5) (4) (1) Product Type RL : Fixed metal film low resistance value chip resistors rectangular type

GRM188R60J106ME47

Abstract: 37Z6 FR408
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312BV Rev. 1, 12/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312BV Rev. 1, 12/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station

GRM39CH

Abstract: Susumu Marking TFL0816-3N9 diode gp 429 TFL0816-12N TFL0816-22N TFL0816-27N TFL0816-33N TFL0816-5N6 TFL0816-6N8
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2132TQ L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2132TQ is GaAs MMIC for PA driver amplifier which were developed for dual band mobile phone and another L-band application. The device can operate with 3.6 V TYP., having the high gain and low distortion.

MARKING G1V

Abstract: marking G1Y G1V GRM39CH020C50PB RR0816P-102-D
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUITS µPG2106TB,µPG2110TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-band application. These devices can operate with 3.0 V TYP., having the high gain and low distortion.

GRM188R71H104KA93

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 1.1, 3/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BT1 High Efficiency/Linearity Amplifier The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier

ma01 transistor

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 1, 3/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BT1 High Efficiency/Linearity Amplifier The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier

FR408

Abstract: 06035J100GBS 25c2625 MARKING HBT AN1955 GRM188R71H104KA93 06035J5R6BBS RR0816Q-121-D MMA20312 MMA20312BT1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 0, 10/2010 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BT1 High Efficiency/Linearity Amplifier The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 1.2, 2/2012 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BT1 High Efficiency/Linearity Amplifier The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier

2100 WCDMA repeater circuit

Abstract: FR408 z137
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 1.2, 2/2012 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BT1 High Efficiency/Linearity Amplifier The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier

TFL0816-2N7

Abstract: diode gp 429 TFL0816-1N0 Marking g3b
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2134TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2134TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. This device can operate with 3.0 V TYP., having the high gain and low distortion. This device is housed in a 6-pin

PC8211TK

Abstract: 6-PIN marking f1
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8211TK SiGe LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS DESCRIPTION The μPC8211TK is a silicon germanium SiGe monolithic integrated circuit designed as a low noise amplifier for GPS and mobile communications.

4085C

Contextual Info: Thin Film Band-Path Filter TBF-2520 series NEW Small size that contributes space-saving Excellent loss characteristics Applications Bluetooth, Wireless LAN, PHS SPECIFICATIONS 2.5Ϯ0.2 Equivalent circuit 0.5Ϯ0.1 0.2Ϯ0.1 2.0Ϯ0.2 Mechanical 0.4Ϯ0.1 Marking

marking g2p

Abstract: diode gp 429 TFL0816-3N3 TFL0816-6N8 TFL0816-8N2
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2130TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2130TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. The device can operate with 3.0 V TYP., having the high gain and low distortion.