SUSUMU MARKING Search Results

CPA2512

Contextual Info: CPA2512 Series Chip Power Resistors Using the Thermal Performance Plots CPA2512 Series Chip Power Resistors Using the Thermal Performance Plots SUSUMU CO., LTD. Rev. 1.0, Aug 2008 CPA2512 Series Chip Power Resistors A thermal performance plot is a detailed derating

Susumu RG series part Marking

Abstract: humidity resistor RG2012 SEI resistor reflow RM Series Thick Film Chip Resistors 3216-CHIP jo 4070 RG1005 RG1608 RG3216
Contextual Info: 2006 rev.1 Data Book Ultra-precision & Ultra-reliability Thin Film Chip Resistors SUSUMU CO., LTD. Marke RG s Highly •Highly r automot test an exposur automot humidity resistor exceptio are esp ■In cons required an adde ●Variou less d ●Opera resist

IPC4101

Contextual Info: Product Family: RF Power Chip Resistor Part Number: CF*2512E50R0FS Susumu World Group Construction: • 99.5% BeO or High Purity Alumina • Nickel alloy thin-film resistive element • Epoxy-resin overcoat • Pre-tinned Sn100, matte terminations over Ni barrier is standard

2512E50R0JS

Contextual Info: Product Family: RF Power Chip Resistor Part Number: CF*2512E50R0JS Susumu World Group Construction: • BeO or High Purity Alumina • Nickel alloy thin-film resistive element • Epoxy-resin overcoat • Pre-tinned Sn100, matte terminations over Ni barrier is standard

Susumu Marking

Contextual Info: On Environment Thin Film products by Susumu is environmentally friendly by nature. •Completely lead free: Our thin film products do not contain any lead even in the areas that are not restricted by RoHS. The lead free products are designated as in the catalogue.

Susumu Marking

Abstract: Susumu Date Code SUSUMU Susumu Date Code ON THE PACKAGING bt5 marking code RCR-2121 RR0816 17 21 110 1102 marking
Contextual Info: 2/16 （Unit ）mm L a W a ② Dimension mm 1.60±0.2 0.80±0.2 0.4±0.1 0.3±0.2 0.3±0.2 ③ t ① Code letter Ｌ Ｗ ｔ ａ ｂ b ④ b Fig.1 Construction and dimensions NOTE : ① Resistive element ② Electrode ③ Protective coat ④ Substrate TITLE:

Susumu Date Code

Abstract: Susumu Date Code ON THE PACKAGING bt5 marking code Susumu Marking RCR-2121 RR0816 JIS adhesion glue S/Susumu Date Code
Contextual Info: 2/16 （Unit ）mm L a W a ② Dimension mm 1.60±0.2 0.80±0.2 0.4±0.1 0.3±0.2 0.3±0.2 ③ t ① Code letter Ｌ Ｗ ｔ ａ ｂ b ④ b Fig.1 Construction and dimensions NOTE : ① Resistive element ② Electrode ③ Protective coat ④ Substrate TITLE:

HL-00

Abstract: EIAJRRV08B HP4191A HL00-4002-E0 4002-EO ci 4002 Susumu Marking GS83-1071 RRV08B ceramic 1005
Contextual Info: 1/13 1. Scope This specification applies to 1 .0 0 X 0 .5 0 m m , fixed thin film chip inductor, rectangular type. 2. Type Designation HPL 1005 1 (2) - %%% (3) (1) Product Type HPL : fixed thin film chip inductor (2) Size 1005 : 1.00 X 0.50mm (3) The nominal inductance value

ambit rev 4

Abstract: ambit rev 7 HP4191A SN 4004 Susumu Date Code
Contextual Info: 1/13 1. Scope This specification applies to 0 . 6 0 X 0 .3 0 m m , fixed thin film chip inductor, rectangular type. 2. Type Designation H PL 0603 1 - %%% (2) (3) (1) Product Type H PL : fixed thin film chip inductor (2) Size 0603 : 0 .6 0 X0.30mm (3) The nominal inductance value

R005

Abstract: Susumu Date Code
Contextual Info: 1/13 1. Scope This specification applies to 7 .5 0 X 2 .0 0 m m 2W fixed metal film low resistance value chip resistors rectangular type. 2. Type Designation RL 7520W 1 (2) □ - %%%% (3) - □ (4) (5) (1)Product Type RL : Fixed metal film low resistance value chip resistors rectangular type

RR1220

Abstract: Susumu Date Code Susumu Date Code ON THE PACKAGING RCR-2121 Susumu Marking
Contextual Info: 2/14 （Unit ）mm L a W a ② Dimension L 2.0±0.2 W 1.25±0.2 t 0.4±0.1 a 0.4±0.2 b 0.4±0.2 ③ t ① Code letter b ④ b Fig.1 Construction and dimensions NOTE : ① Resistive element ② Electrode ③ Protective coat ④ Substrate TITLE: Specification for

EIAJRRV08B

Abstract: HP4191A JIS C 6484 TL004 Susumu Marking
Contextual Info: 1/13 1. Scope This specification applies to 0.80 X 1.60m m , fixed thin film chip inductor, rectangular type. 2. Type Designation TFL 0816 - %%% 1 (2) (3) (1) Product Type T FL : fixed thin film chip inductor (2) Size 0816 : 0.80X 1.60mm (3) The nominal inductance value

Susumu RL Series

Abstract: 25X2 RL00-4053-E0 Susumu Marking Susumu Date Code
Contextual Info: 1/12 1. Scope This specification applies to 1. 2 5 X 2 . 00 mm , 0. 25W fixed metal film low resistance value chip resistors rectangular type. 2. Type Designation RL 1220 □ 2 (3) (1) - %%%% - □ (4) (5) (1) Product Type RL : Fixed metal film low resistance value chip resistors rectangular type

Susumu Marking

Contextual Info: 1/13 1. Scope This specification applies to 3 .7 5 X 2 .0 0 m m 1 /2 W fixed metal film low resistance value chip resistors rectangular type. 2. Type Designation RL 3720 1 (2) □ - %%%% (3) - □ (5) (4) (1) Product Type RL : Fixed metal film low resistance value chip resistors rectangular type

Susumu RG series part Marking

Abstract: Susumu Date Code RG1005 1005 Series 49R9 RG1005 RG1608 RG2012 susumu resistors RG1608P 3H203
Contextual Info: 1/13 1. Scope This specification applies to fixed metal film chip resistors rectangular type. [High precision and reliability] 2. Type Designation Example; RG 1608 2 (i) 1 02 B - T5 (4) (5) (6 ) (3) (1) Product Type RG : Fixed metal film chip resistors rectangular type (Reliability type)

RM2012

Abstract: RM2012A-102/302-PBVW10
Contextual Info: 1/11 1. Scope This specification applies to fixed metal film surface mount resistor networks [High precision and reliability] 2. Type Designation Example: R M 2012A - 102/ 102-PW XL10 I (2) (3) (4) (5) (6) (7) (8) (9) (10) (1) Product Type RM : Fixed metal film surface mount resistor networks.

GRM188R60J106ME47

Abstract: 37Z6 FR408
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312BV Rev. 1, 12/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312BV Rev. 1, 12/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station

FR408

Abstract: FR-408 06035J100GBS GRM188R71H104KA93 GRM188R60J106ME47 06033J220GBS AN1955 z137 C18 QFN 06035J4R7BBS
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312BV Rev. 0, 8/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station

Contextual Info: Document Number: MMA20312BV Rev. 0, 8/2011 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BVT1 High Efficiency/Linearity Amplifier The MMA20312BV is a 2- stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUITS µPG2106TB,µPG2110TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-band application. These devices can operate with 3.0 V TYP., having the high gain and low distortion.

MARKING G1V

Abstract: marking G1Y G1V GRM39CH020C50PB RR0816P-102-D
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUITS µPG2106TB,µPG2110TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-band application. These devices can operate with 3.0 V TYP., having the high gain and low distortion.

ma01 transistor

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 1, 3/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BT1 High Efficiency/Linearity Amplifier The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMA20312B Rev. 1.2, 2/2012 Heterojunction Bipolar Transistor Technology InGaP HBT MMA20312BT1 High Efficiency/Linearity Amplifier The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier