2SA1046
Abstract: 2N6275 equivalent BU108 TR TIP2955 MOTOROLA 2N6277 BU806 Complement BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO sus = 100 Vdc (Min) — 2N6274 VCEO(sus) = 120 Vdc (Min) — 2N6275
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TERMOPAR tipo k
Abstract: TERMOPAR tipo j crouzet MAS 10 programming TERMOPAR k crouzet MAS programming sonda ph TERMOPAR TIPO T millenium 2 crouzet programming manual sensor termopar tipo j Crouzet Millenium 2 sa 20
Contextual Info: Microcontrol Soluciones de automatismos adaptadas a sus aplicaciones 08 Panorama b Controladores lógicos b Relés de control b Temporizadores www.crouzet.com Una empresa de Panorama Microcontrol Editorial Sumario Reconocido desde hace más de 40 años por la calidad de sus temporizadores,
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termopar tipo ktermopar tipo jcrouzet mas 10 programmingtermopar k+6crouzet mas programmingsonda phtermopar tipo tmillenium 2 crouzet programming manualsensor termopar tipo jcrouzet millenium 2 sa 20
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rca 40410
Abstract: rca 40362 transistor 40410 RCA transistor 40410 RCA transistor 40406 40410 RCA 40319 40362 RCA 2N5295 2N5296 RCA
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C to 30 A . . •c pm k - 12 A lc = 10A Py =7 5 •100W Switching Linear 130 x 130 130 x 130 1 3 0 x 130 BU106 2N5840 [N-P-N] 2N 52 40 [N-P-N] BU106 2N5838 Va o sus =l40V VCER(sus) =275 V hFE = 20min. hFE.:8 ;" 0) /
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lc-30a130x130180x180210x210+16bu1062n58402n52402n65102n63082n5805rca 40410rca 40362transistor 40410rca transistor 40410rca transistor 4040640410rca 4031940362 rca2n52952n5296 rca
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NPN Transistor 1500V
Abstract: bu2506ax BU2506 BU2506A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2506AX DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 700V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of
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BU2508AX
Abstract: BU2508-AX NPN Transistor 1500V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2508AX DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 700V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of
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BU2515AF
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2515AF DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 800V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of
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BU2520AX
Abstract: NPN Transistor 1500V npn transistor TV power transistor datasheet
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2520AX DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 800V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of
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BU2508a Transistor
Abstract: BU2508A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2508A DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 700V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of
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TRANSISTOR BU2508AF
Abstract: bu2508af equivalent bu2508af TV power transistor datasheet Transistor Transistor Power Horizontal NPN Transistor 1500V 700 v power transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2508AF DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 700V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of
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bu2508aftransistor bu2508afbu2508af equivalenttv power transistor datasheet+3transistor transistor power horizontalnpn transistor 1500v700 v power transistor
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vce 500v NPN Transistor
Abstract: BU922 transistor Vbe
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU922 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 450V(Min) APPLICATIONS ·Designed for automotive ignition applications and inverter circuits for motor control.
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bu2527ax
Abstract: ISC transistor bu2527ax equivalent bu2527ax BB145 Equivalent bu2527ax datasheet
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2527AX DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 800V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of high
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bu2527axisc transistor bu2527axequivalent bu2527axbb145+1equivalent bu2527ax datasheet
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rca 40411
Abstract: RCA 40251 2N3055 386 RCA rca 2N3771 power circuit 3771 E1 BD182 rca 2n 3055 BD181 rcs258 rca 40363
Contextual Info: Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont’d V CEO(sus) V •c V C E V *SUS* V \ Z ç £ { s a t )—V 'C E X - mA h FE Temp.—°C V CE V A 25 2N3055 (Hometaxial) FA M ILY (n-p-n) Hometaxial-Base, General Purpose f j = 0.8 M H z min; P j to 150 W max
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2n30552n6371bd1422n6253+15bd181bd1822n6254bd183bd450bd451rca 40411rca 402512n3055 386 rcarca 2n3771 power circuit3771 e1bd182 rca2n 3055rcs258rca 40363
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222A Transistor
Abstract: 222A 22a ic npn 10a 800v BU4530AW transistor 800V 1A NPN Transistor 1500V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU4530AW DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 800V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color
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bu4530aw100ma222a transistor222a+422a icnpn 10a 800vtransistor 800v 1anpn transistor 1500v
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BU2725AF
Abstract: bu2725
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2725AF DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 825V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color
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BU2725AX
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2725AX DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 825V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color
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BU2522AX
Abstract: BU2522 NPN Transistor 1500V transistor 800V 1A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2522AX DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 800V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of pc
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BU2525AX
Abstract: NPN Transistor 1500V TRANSISTOR NPN 8A 800V npn transistor vceo 800v
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2525AX DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 800V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of large
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BU2725AW
Abstract: BU2725
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2725AW DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 825V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color
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BU2727AW
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2727AW DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 825V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color
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BUW133H
Abstract: NPN Transistor 450v 1A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUW133H DESCRIPTION •High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO SUS = 450V APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits.
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BUW131H
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUW131H DESCRIPTION •High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO SUS = 450V APPLICATIONS ·Designed for use in very fast switching applications in inductive circuits.
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2N6179
Abstract: POWER TRANSISTORS 10A 400v pnp BU106 2N3055 RCA 2N2102 BUX17 BUX18 RCA 2N3055 transistor transistor BDX 65 2N5240
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .
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lc-30a130x130180x180210x210+14bu1062n58402n52402n65102n63082n58052n6179power transistors 10a 400v pnp2n3055 rca2n2102bux17bux18rca 2n3055 transistortransistor bdx 65
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2SC2625
Abstract: npn transistor 2sc2625 power transistor 2sc2625 NPN Transistor 400v to247 2SC262 transistor 2sc2625 UNIT JUNCTION TRANSISTOR 2sC2625 transistor
Contextual Info: /zAMOS PEC SWITCHMODE SERIES NPN POWER TRANSISTORS . designed for use in high-voltage,high-speed,power switching in inductive circuit, and switchmode applications such as switching regulator's,converters. FEATURES: *Collector-Emitter Sustaining Voltage^ ceo sus =
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2sc262510amperenpn transistor 2sc2625power transistor 2sc2625+5npn transistor 400v to2472sc262transistor 2sc2625unit junction transistor2sc2625 transistor
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1N4933
Abstract: 2N6338 2N6341
Contextual Info: ON Semiconductort High-Power NPN Silicon Transistors 2N6338 2N6341* . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage – VCEO sus = 100 Vdc (Min) – 2N6338
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