SUPER247 Search Results

Contextual Info: Qualification Report 98/010/1 for Super247 HEXFET Product Manufactured at IRGB February 1999 Issue 1. Super247 Hexfet Qualification Report Report prepared by:- Kate Withers IRGB Page 1 of 19 Contents 1. Introduction 2. Environmental Test Results Summary 3. Environmental Test Results

SIHS36N50D

Contextual Info: SiHS36N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness

IRGPS4067

Abstract: irgps4067d CI 4000 J500 IRGPS IRGPS4067DPBF
Contextual Info: PD - 97736 IRGPS4067DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features •         Low VCE on Trench IGBT Technology Low Switching Losses 5 s SCSOA Square RBSOA 100% of The Parts Tested for ILM 

TO274

Contextual Info: IRFPS38N60L, SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.12 • Lower Gate Charge Results in Simple Drive

IRFPS43N50K

Abstract: SiHFPS43N50K
Contextual Info: IRFPS43N50K, SiHFPS43N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) () VGS = 10 V 0.078 Qg (Max.) (nC) 350 Qgs (nC) 85 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt

Super-247 Package

Abstract: extrusion mounted clip 20N-40N igbt clip Kool pad igbt clip rail
Contextual Info: Application Note AN-997 Mounting Guidelines for the Super-247 By Andrew Sawle and Arthur Woodworth Table of Contents Page Introduction .1 A Breakdown of System Thermal Resistance .1

Contextual Info: Package Reliability www.vishay.com Vishay Siliconix ENVIRONMENTAL AND PACKAGE TESTING DATA FOR Super-247 STRESS SAMPLE SIZE DEVICE HR./CYC CONDITION TOTAL FAILS 85/85 551 511 000 85 °C, 85 % RH FAIL PERCENTAGE 0.00 HAST 530 53 000 130 C, 85 % RH 0.00 Power Cycle

IRG4PC30S

Abstract: igbt 20A 1200v IRG4BC20 IRG4PC40W IRGS14 IRGS14C40L 100C IRG4BC20W IRG4BC30W IRG4BC30W-S
Contextual Info: International Rectifier EXISTING Products The IR IGBT Navigator NEW UPCOMING Products Products released to to be released within production in last 6next 3-4 months 9 months POTENTIAL Products no current plans. see bus.mgmt. Effective 15 June 2000 Voltage

T5 transistor TO-247

Abstract: IRG4PSC71K
Contextual Info: PD - 91683A IRG4PSC71K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High abort circuit rating IGBTs, optimized for

Contextual Info: PD- 95898 IRFPS43N50KPbF SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET VDSS RDS(on) typ. ID 0.078Ω 47A

Contextual Info: PD- 93922C SMPS MOSFET IRFPS43N50K HEXFET Power MOSFET Applications l l l l Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits VDSS RDS(on) typ. ID 0.078Ω 47A 500V Benefits

Contextual Info: Bulletin I2164 rev. A 10/04 SAFEIR Series 70TPS. PHASE CONTROL SCR VT < 1.4V @ 100A ITSM = 1400A VRRM = 1200, 1600V Description/ Features The 70TPS. SAFEIR series of silicon controlled rectifiers are specifically designed for high and medium power switching and phase control applications.

Contextual Info: PD- 95140 IRFPS35N50LPbF SMPS MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications • Lead-Free HEXFET Power MOSFET VDSS RDS on typ. Trr typ. ID 0.125Ω

Contextual Info: IRFPS30N60K, SiHFPS30N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.16 Qg (Max.) (nC) 220 Qgs (nC) 64 Qgd (nC) 110 Configuration • Improved Gate, Avalanche and Dynamic dV/dt

IRG4PSC71KD

Contextual Info: PD - 91684A PRELIMINARY IRG4PSC71KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High abort circuit rating IGBTs, optimized for

420 Diode

Abstract: ir igbt 1200V 40A IRGPS40B120UD TRANSISTOR N 1380 600 300 SC igbt 40A 600V 3IRGPS40B120UD
Contextual Info: PD- 94240 IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

Contextual Info: PD - 95701 SMPS MOSFET IRFPS38N60LPbF HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications • Lead-Free VDSS RDS on typ. Trr typ. ID 120mΩ

smps 450 W

Abstract: IRFPS43N50K
Contextual Info: PD- 93922 PROVISIONAL IRFPS43N50K SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics l Improved Avalanche Ruggedness and

60 SMD 5050 Ultra Bright LEDs

Abstract: MMA 0204 HV - Professional
Contextual Info: Vishay Intertechnology, Inc. One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components To view datasheets of the products contained in the Engineer’s Toolbox, please visit www.vishay.com/ref/et1 Alternative

70TPS16

Abstract: 70TPS P035H HIGH VOLTAGE THYRISTOR SCR
Contextual Info: Bulletin I2184 rev A 01/07 SAFEIR Series 70TPS.PbF PHASE CONTROL SCR VT Lead-Free "PbF" suffix < 1.4V @ 100A ITSM = 1400A VRRM = 1200 e 1600V Description/ Features The 70TPS.PbF SAFEIR series of silicon controlled rectifiers are specifically designed for high

sumida 94V-0

Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
Contextual Info: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.

IRFPS37N50A

Abstract: SiHFPS37N50A SiHFPS37N50A-E3
Contextual Info: IRFPS37N50A, SiHFPS37N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) () VGS = 10 V 0.13 Qg (Max.) (nC) 180 Qgs (nC) 46 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt

IRFPS35N50L

Abstract: SiHFPS35N50L SiHFPS35N50L-E3
Contextual Info: IRFPS35N50L, SiHFPS35N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.125 Qg (Max.) (nC) 230 Qgs (nC) 65 Qgd (nC) 110 Configuration

70TPS12

Abstract: INTERNATIONAL RECTIFIER scr MOSFET 1600v 100A 70tps SCR 100A 1600V single phase fully controlled rectifier Super-247 Package 70TPS16
Contextual Info: Bulletin I2164 rev. A 10/04 SAFEIR Series 70TPS. PHASE CONTROL SCR VT < 1.4V @ 100A ITSM = 1400A VRRM = 1200, 1600V Description/ Features The 70TPS. SAFEIR series of silicon controlled rectifiers are specifically designed for high and medium power switching and phase control applications.