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    SUP85 Search Results

    SUP85 Datasheets (37)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SUP85N02-03
    Vishay Intertechnology N-Channel 20-V (D-S), 175-C MOSFET Original PDF 41.5KB 5
    SUP85N02-03
    Vishay Siliconix MOSFETs Original PDF 64.93KB 5
    SUP85N02-03-E3
    Vishay N-Channel 20-V (D-S) 175°C MOSFET Original PDF 64.93KB 5
    SUP85N02-03-E3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 85A TO220AB Original PDF 6
    SUP85N02-03 SPICE Device Model
    Vishay N-Channel 20-V (D-S), 175°C MOSFET Original PDF 203.34KB 3
    SUP85N02-06
    Vishay Siliconix MOSFETs Original PDF 58.02KB 4
    SUP85N02-06 SPICE Device Model
    Vishay N-Channel 20-V (D-S), 175°C MOSFET Original PDF 206.73KB 3
    SUP85N03-04P
    Vishay Intertechnology N-Channel 30-V (D-S) 175°C MOSFET Original PDF 46.5KB 5
    SUP85N03-04P
    Vishay Siliconix MOSFETs Original PDF 61.98KB 5
    SUP85N03-04P-E3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 85A TO220AB Original PDF 6
    SUP85N03-04P SPICE Device Model
    Vishay N-Channel 30-V (D-S) 175°C MOSFET Original PDF 212.35KB 3
    SUP85N03-07P
    Vishay Intertechnology N-Channel 30-V (D-S) 175°C MOSFET Original PDF 79.69KB 5
    SUP85N03-3M6P-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 85A TO220AB Original PDF 6
    SUP85N04-03
    Vishay Intertechnology N-Channel 40-V (D-S) 175°C MOSFET Original PDF 80.79KB 5
    SUP85N04-03-E3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 85A TO220AB Original PDF 6
    SUP85N04-03 SPICE Device Model
    Vishay N-Channel 40-V (D-S) 175°C MOSFET Original PDF 182.68KB 3
    SUP85N04-04
    Vishay Intertechnology N-Channel 40-V (D-S) 175°C MOSFET Original PDF 79.02KB 5
    SUP85N04-04
    Vishay Siliconix N-Channel 40-V (D-S) 175°C MOSFET Original PDF 57.13KB 5
    SUP85N04-04-E3
    Vishay Siliconix N-Channel 40-V (D-S) 175°C MOSFET Original PDF 57.13KB 5
    SUP85N04-04 SPICE Device Model
    Vishay N-Channel 40-V (D-S) 175°C MOSFET Original PDF 207.88KB 3
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    SUP85 Price and Stock

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    Vishay Intertechnologies SUP85N10-10-E3

    Trans MOSFET N-CH 100V 85A 3-Pin(3+Tab) TO-220AB
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    Verical () SUP85N10-10-E3 1,800 5
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    SUP85N10-10-E3 850 4
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    SUP85N10-10-E3 116 16
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    Avnet Americas SUP85N10-10-E3 Tube 52 Weeks 500
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    Arrow Electronics () SUP85N10-10-E3 1,800 52 Weeks 1
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    SUP85N10-10-E3 850 52 Weeks 1
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    Newark () SUP85N10-10-E3 Bulk 500 500
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    SUP85N10-10-E3 Bulk 1
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    TTI SUP85N10-10-E3 Tube 5,500 500
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    TME SUP85N10-10-E3 116 1
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    EBV Elektronik SUP85N10-10-E3 53 Weeks 50
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    Vishay Intertechnologies SUP85N10-10-GE3

    Trans MOSFET N-CH 100V 85A 3-Pin(3+Tab) TO-220AB
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    Verical () SUP85N10-10-GE3 500 500
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    SUP85N10-10-GE3 108 14
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    Avnet Americas SUP85N10-10-GE3 Tube 4,000 52 Weeks 1
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    Arrow Electronics SUP85N10-10-GE3 500 52 Weeks 500
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    Newark SUP85N10-10-GE3 Bulk 288 1
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    TTI SUP85N10-10-GE3 Tube 350 50
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    TME SUP85N10-10-GE3 108 1
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    EBV Elektronik SUP85N10-10-GE3 150 53 Weeks 50
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    Vishay Intertechnologies SUP85N15-21-E3

    - Rail/Tube (Alt: SUP85N15-21-E3)
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    Avnet Americas SUP85N15-21-E3 Tube 52 Weeks 500
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    Newark SUP85N15-21-E3 Bulk 500
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    TTI SUP85N15-21-E3 Tube 1,500 50
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    TME SUP85N15-21-E3 1
    • 1 $6.15
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    EBV Elektronik SUP85N15-21-E3 53 Weeks 50
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    Vishay Siliconix SUP85N03-04P-E3

    MOSFET, POWER, N-CH, VDSS 30V, RDS(ON) 0.0035OHM, ID 85A, TO-220AB, PD 166W, VGS +/-20V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SUP85N03-04P-E3 Bulk 500
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    • 1000 $5.13
    • 10000 $4.72
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    Vishay Intertechnologies SUP85N02-03-E3

    Trans MOSFET N-CH 20V 85A 3-Pin(3+Tab) TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SUP85N02-03-E3 10
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    SUP85 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SUP85N10-10, SUB85N10-10 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0105 at VGS = 10 V 100 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC


    Original
    sup85n10-10sub85n10-102002/95/eco-220ab+2o-263sup85n10-10-e3 PDF

    SUB85N04-04

    Abstract: SUP85N04-04
    Contextual Info: SUP/SUB85N04-04 New Product Vishay Siliconix N-Channel 40-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.004 @ VGS = 10 V 85 a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N04-04 Top View SUP85N04-04 N-Channel MOSFET


    Original
    sup/sub85n04-04o-220abo-263sub85n04-04+3sup85n04-04s-00653--rev27-mar-00 PDF

    SUP85N15-21

    Abstract: sup85n15 SUP85N15-21-E3
    Contextual Info: SUP85N15-21 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 150 0.021 at VGS = 10 V 85 • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT APPLICATIONS • Primary Side Switch


    Original
    sup85n15-21o-220absup85n15-21-e308-apr-05+1sup85n15 PDF

    AN609

    Abstract: SUP85N03-04P
    Contextual Info: SUP85N03-04P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    sup85n03-04pan60903-jan-08 PDF

    AN609

    Abstract: SUP85N02-03
    Contextual Info: SUP85N02-03_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    sup85n02-03an60903-jan-08 PDF

    SUB85N04-04

    Abstract: SUP85N04-04 25040NC
    Contextual Info: SUP/SUB85N04-04 Vishay Siliconix N-Channel 40-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.004 @ VGS = 10 V 85 a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S Top View Ordering Information SUP85N04-04 SUP85N04-04—E3 (Lead (Pb)-Free)


    Original
    sup/sub85n04-04o-220abo-263sup85n04-04+5sup85n04-04--e3sub85n04-04sub85n04-04--e318-jul-0825040nc PDF

    r 3589

    Abstract: AN609 SUP85N10-10 68369
    Contextual Info: SUP85N10-10_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    sup85n10-10an60903-jan-08r 3589+168369 PDF

    SUP85N15-21-E3

    Abstract: SUP85N15-21 SUP85N1521E3
    Contextual Info: SUP85N15-21 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 150 0.021 at VGS = 10 V 85 • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT APPLICATIONS • Primary Side Switch


    Original
    sup85n15-21o-220absup85n15-21-e318-jul-08+1sup85n1521e3 PDF

    01884

    Abstract: SUB85N08-08 SUP85N08-08
    Contextual Info: SUP/SUB85N08-08 New Product Vishay Siliconix N-Channel 75-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.008 @ VGS = 10 V 85 a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N08-08 Top View SUP85N08-08 N-Channel MOSFET


    Original
    sup/sub85n08-08o-220abo-263sub85n08-08+4sup85n08-08s-01884--rev28-aug-0001884 PDF

    SUP85N10-10P-GE3

    Contextual Info: SUP85N10-10P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 100 0.010 at VGS = 10 V 85d 77 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original
    sup85n10-10p2002/95/eco-220absup85n10-10p-ge3+111-mar-11 PDF

    Contextual Info: SPICE Device Model SUP85N15-21 www.vishay.com Vishay Siliconix N-Channel 150 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original
    sup85n15-212002/95/ec2011/65/eujs709a+102-oct-12 PDF

    S4660

    Contextual Info: SUP85N10-10P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 100 0.010 at VGS = 10 V 85d 77 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original
    sup85n10-10p2002/95/eco-220absup85n10-10p-ge3+211-mar-11s4660 PDF

    SUP85N15-21

    Contextual Info: SUP85N15-21 New Product Vishay Siliconix N-Channel 150-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 150 0.021 @ VGS = 10 V 85 APPLICATIONS D Primary Side Switch D Automotive


    Original
    sup85n15-21o-220abs-21715--rev07-oct-02 PDF

    75183

    Abstract: AN609 SUP85N04-03
    Contextual Info: SUP85N04-03_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    sup85n04-03an60903-jan-0875183 PDF

    Contextual Info: SUP/SUB85N08-08 New Product Vishay Siliconix N-Channel 75-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.008 @ VGS = 10 V 85 a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N08-08 Top View SUP85N08-08 N-Channel MOSFET


    Original
    sup/sub85n08-08o-220abo-263sup85n08-08+3sub85n08-08s-00642--rev03-apr-00 PDF

    sup85n08

    Abstract: AN609 SUP85N08-08
    Contextual Info: SUP85N08-08_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    sup85n08-08an60904-sep-07sup85n08 PDF

    sup85n03

    Contextual Info: SUP85N03-3m6P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0036 at VGS = 10 V 85d 0.0044 at VGS = 4.5 V 85d • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original
    sup85n03-3m6p2002/95/eco-220absup85n03-3m6p-ge3+218-jul-08sup85n03 PDF

    AN609

    Abstract: sup85n10
    Contextual Info: SUP85N10-10P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    sup85n10-10pan60910-feb-10sup85n10 PDF

    SUP85N02-03

    Contextual Info: SPICE Device Model SUB/SUP85N02-03 Vishay Siliconix N-Channel 20-V D-S , 175°C MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    sub/sup85n02-0318-apr-01sup85n02-03 PDF

    AN609

    Abstract: SUP85N04-04
    Contextual Info: SUP85N04-04_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    sup85n04-04an60903-jan-08 PDF

    SUB85N08-08

    Abstract: SUP85N08-08
    Contextual Info: SUP/SUB85N08-08 New Product Vishay Siliconix N-Channel 75-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.008 @ VGS = 10 V 85 a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N08-08 Top View SUP85N08-08 N-Channel MOSFET


    Original
    sup/sub85n08-08o-220abo-263sub85n08-08+2sup85n08-0818-jul-08 PDF

    AN609

    Abstract: SUP85N06-05
    Contextual Info: SUP85N06-05_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    sup85n06-05an60903-jan-08 PDF

    Contextual Info: SPICE Device Model SUP85N03-3m6P www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original
    sup85n03-3m6p2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: SUP/SUB85N08-08 New Product Vishay Siliconix N-Channel 75-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.008 @ VGS = 10 V 85 a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N08-08 Top View SUP85N08-08 N-Channel MOSFET


    Original
    sup/sub85n08-08o-220abo-263sup85n08-08+2sub85n08-0808-apr-05 PDF