SUP75N Search Results

a2826

Contextual Info: Tem ic SUP/SUB75NÖ6-08 Siliconix N-Channel Enhancement-Mode Transistors 175 °C Maximum Junction Temperature Product Summary TO-220AB o TO-263 It h ;O D R A IN connected to TAB ~TT G D S Top View G D S SUB75N06-08 Top View SUP75N06-08 N-Channel M OSFET Absolute Maximum Ratings Tc = 25 °C Unless Otherwise Noted

SUB75N05-06

Abstract: SUP75N05-06
Contextual Info: SUP/SUB75N05-06 Vishay Siliconix N-Channel 50-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 50 0.006 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N05-06 Top View N-Channel MOSFET SUP75N05-06 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

SUB75N05-06A

Abstract: SUP75N05-06A
Contextual Info: SUP/SUB75N05-06A Vishay Siliconix New Product N-Channel 50-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 50 0.006 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S Top View Ordering Information: SUP75N05-06A N-Channel MOSFET

SUB75N03-04

Abstract: SUP75N03-04
Contextual Info: SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 30 0.004 75a D TO-220AB TO-263 G DRAIN connected to TAB DRAIN connected to TAB G D S Top View SUB75N03-04 G D S S Top View SUP75N03-04 N-Channel MOSFET

marking code vishay SILICONIX

Abstract: D2Pak-5 D2PAK siliconix code marking to-220 D2PAK package vishay siliconix code marking to-220 marking code to-263 72756 marking t Siliconix
Contextual Info: Part Marking Information Vishay Siliconix DEVICES: TO-220 TO-262 TO-263 D2PAK, D2PAK-5 TO-220 TO-262 TO-263 (D2PAK, D2PAK-5) SUV85N10 -10 SUP75N05 SQM75N05 T Y W F LL -06 -06 T Y W F LL TYWF LL Example Part Numbers In Red Type = ESD Symbol = Siliconix Logo

SUP 03

Abstract: SUB75N05-06A SUP75N05-06A
Contextual Info: SUP/SUB75N05-06A Vishay Siliconix New Product N-Channel 50-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 50 0.006 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S Top View Ordering Information: SUP75N05-06A N-Channel MOSFET

SUB75N05-06

Abstract: SUP75N05-06
Contextual Info: SUP/SUB75N05-06 Vishay Siliconix N-Channel 50-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 50 0.006 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N05-06 Top View N-Channel MOSFET SUP75N05-06 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

4431 mosfet

Abstract: AN609 SUP75N06-08 84431
Contextual Info: SUP75N06-08_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SUP75N03-04

Abstract: 4431 mosfet AN609
Contextual Info: SUP75N03-04_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: SUP/SUB75N08-10 Siliconix N-Channel 75-V D-S , 175_C MOSFET Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.010 75a D TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S S SUB75N08Ć10 Top View SUP75N08Ć10 NĆChannel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

Contextual Info: SUP/SUB75N05-06 Siliconix N-Channel 50-V D-S , 175_C MOSFET Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 50 0.006 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N05-06 Top View N-Channel MOSFET SUP75N05-06 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

Contextual Info: SUP/SUB75N06-07L N-Channel Enhancement-Mode Transistors Product Summary I d A rDS(on) (ß ) 0.0075 @ VGS = 10 V 0.0085 @ VGS = 4.5 V V(BR)DSS 60 75a D Q TO-220AB o TO-263 t Jl 1 in r DRAIN connected to TAB Top View SUB75N06-07L GD S Top View SUP75N06-07L

SUB75N06-08

Abstract: SUP75N06-08
Contextual Info: SUP/SUB75N06-08 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View SUP75N06-08 N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

SUP75N08-10

Abstract: SUB75N08-10
Contextual Info: SUP/SUB75N08-10 Vishay Siliconix N-Channel 75-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.010 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N08-10 Top View SUP75N08-10 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

SUB75N05-06A

Abstract: SUP75N05-06A sup75n05
Contextual Info: SUP/SUB75N05-06A Vishay Siliconix New Product N-Channel 50-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 50 0.006 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S Top View Ordering Information: SUP75N05-06A N-Channel MOSFET

sup75n08

Abstract: SUP75N08-10 SUB75N08-10
Contextual Info: SUP/SUB75N08-10 Vishay Siliconix N-Channel 75-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.010 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N08-10 Top View SUP75N08-10 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

4433 mosfet

Abstract: mosfet 4433 DATASHEET 4433 AN609 SUP75N08-09L
Contextual Info: SUP75N08-09L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

sup75n06-08 datasheet

Abstract: SUB75N06-08 SUP75N06-08
Contextual Info: SUP/SUB75N06-08 Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View N-Channel MOSFET SUP75N06-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: SUP/SUB75N05-06 Vishay Siliconix N-Channel 50-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 50 0.006 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N05-06 Top View N-Channel MOSFET SUP75N05-06 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

n 345

Abstract: SUP75N08 AN609 SUP75N08-10
Contextual Info: SUP75N08-10_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

5310

Abstract: AN609 SUP75N05-07
Contextual Info: SUP75N05-07_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

AN609

Abstract: SUP75N06-12L 68357
Contextual Info: SUP75N06-12L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SUB75N06-08

Abstract: SUP75N06-08
Contextual Info: SUP/SUB75N06-08 Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View N-Channel MOSFET SUP75N06-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

SUP75N06-08

Abstract: SUB75N06-08
Contextual Info: SUP/SUB75N06-08 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View SUP75N06-08 N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)