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    SUM65N20 Search Results

    SUM65N20 Datasheets (4)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SUM65N20-30
    Vishay Intertechnology N-Channel 200-V (D-S) 175°C MOSFET Original PDF 37.62KB 5
    SUM65N20-30
    Vishay Siliconix MOSFETs Original PDF 60.88KB 5
    SUM65N20-30-E3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 65A D2PAK Original PDF 8
    SUM65N20-30 SPICE Device Model
    Vishay N-Channel 200-V (D-S) 175°C MOSFET Original PDF 191.18KB 3
    SF Impression Pixel

    SUM65N20 Price and Stock

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    Vishay Intertechnologies SUM65N20-30-E3

    MOSFET N-CH 200V 65A TO263
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    DigiKey () SUM65N20-30-E3 Cut Tape 2,465 1
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    SUM65N20-30-E3 Digi-Reel 2,465 1
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    SUM65N20-30-E3 Tape & Reel 2,400 800
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    Avnet Americas SUM65N20-30-E3 Tape & Reel 20 Weeks 800
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    Mouser Electronics SUM65N20-30-E3 2,295
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    Verical SUM65N20-30-E3 4 4
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    Arrow Electronics SUM65N20-30-E3 Cut Strips 4 36 Weeks 1
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    Newark SUM65N20-30-E3 Cut Tape 800
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    Bristol Electronics SUM65N20-30-E3 104
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    TTI SUM65N20-30-E3 Reel 800
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    TME SUM65N20-30-E3 1
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    EBV Elektronik SUM65N20-30-E3 2,400 37 Weeks 800
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    Maritex SUM65N20-30-E3 16,815 1
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    Vishay Intertechnologies SUM65N20-30-E3.

    Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:65A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:375W; No. Of Pins:3Pins Rohs Compliant: Yes |Vishay SUM65N20-30-E3.
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    Newark SUM65N20-30-E3. Tape & Reel 800 800
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    Vishay Siliconix SUM65N20-30-E3

    SUM65N20-30-E3 N-CHANNEL MOSFET TRANSISTOR, 65 A, 200 V, 2+TAB-PIN TO-263
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    RS SUM65N20-30-E3 Bulk 2
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    Bristol Electronics SUM65N20-30-E3 50
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    Quest Components SUM65N20-30-E3 40
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    Vishay Siliconix SUM65N20-30

    POWER FIELD-EFFECT TRANSISTOR, 65A I(D), 1-ELEMENT, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET
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    Quest Components SUM65N20-30 144
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    Vyrian SUM65N20-30 7,908
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    Vishay Huntington SUM65N20-30-E3

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    NexGen Digital SUM65N20-30-E3 6
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    Win Source Electronics SUM65N20-30-E3 7,806
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    SUM65N20 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SUM65N20-30

    Abstract: SUM65N20-30-E3
    Contextual Info: SUM65N20-30 Vishay Siliconix N-Channel 200-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 200 0.030 at VGS = 10 V 65a • • • • TrenchFET Power MOSFET 175 °C Junction Temperature Low Thermal Resistance Package 100 % Rg Tested


    Original
    SUM65N20-30 O-263 SUM65N20-30-E3 08-Apr-05 SUM65N20-30 SUM65N20-30-E3 PDF

    sum65n20 datasheet

    Abstract: AN609 SUM65N20-30
    Contextual Info: SUM65N20-30_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


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    SUM65N20-30 AN609 10-Oct-07 sum65n20 datasheet PDF

    Contextual Info: SUM65N20-30 Vishay Siliconix N-Channel 200-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Junction Temperature D New Low Thermal Resistance Package D 100% Rg Tested D RoHS Compliant PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 200 ID (A) 0.030 @ VGS = 10 V


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    SUM65N20-30 O-263 SUM65N20-30--E3 S-50367--Rev. 28-Feb-05 PDF

    Contextual Info: SUM65N20-30 Vishay Siliconix N-Channel 200-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 200 0.030 at VGS = 10 V 65a • • • • TrenchFET Power MOSFET 175 °C Junction Temperature Low Thermal Resistance Package 100 % Rg Tested


    Original
    SUM65N20-30 O-263 SUM65N20-30-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SUM65N20-30

    Abstract: S-50367
    Contextual Info: SUM65N20-30 Vishay Siliconix N-Channel 200-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Junction Temperature D New Low Thermal Resistance Package D 100% Rg Tested D RoHS Compliant PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 200 ID (A) 0.030 @ VGS = 10 V


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    SUM65N20-30 O-263 SUM65N20-30--E3 08-Apr-05 SUM65N20-30 S-50367 PDF

    sum65n20

    Abstract: SUM65N20-30 SUM65N20-30-E3
    Contextual Info: SUM65N20-30 Vishay Siliconix N-Channel 200-V D-S 175_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 200 0.030 @ VGS = 10 V 65 a TrenchFETr Power MOSFET 175_C Junction Temperature New Low Thermal Resistance Package 100% Rg Tested


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    SUM65N20-30 O-263 SUM65N20-30-E3 S-32523--Rev. 08-Dec-03 sum65n20 SUM65N20-30 SUM65N20-30-E3 PDF

    Contextual Info: SUM65N20-30 Vishay Siliconix N-Channel 200-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 200 0.030 at VGS = 10 V 65a • • • • TrenchFET Power MOSFET 175 °C Junction Temperature Low Thermal Resistance Package 100 % Rg Tested


    Original
    SUM65N20-30 O-263 SUM65N20-30-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: SUM65N20-30 Vishay Siliconix N-Channel 200-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 200 0.030 at VGS = 10 V 65a • • • • TrenchFET Power MOSFET 175 °C Junction Temperature Low Thermal Resistance Package 100 % Rg Tested


    Original
    SUM65N20-30 O-263 SUM65N20-30-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SUM65N20-30

    Abstract: P-channel 200V 30A mosfet
    Contextual Info: SPICE Device Model SUM65N20-30 Vishay Siliconix N-Channel 200-V D-S 175°C MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    SUM65N20-30 0-to10V 22-Jan-02 SUM65N20-30 P-channel 200V 30A mosfet PDF

    SUM65N20-30

    Abstract: sum65n20
    Contextual Info: SPICE Device Model SUM65N20-30 Vishay Siliconix N-Channel 200-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    SUM65N20-30 18-Jul-08 SUM65N20-30 sum65n20 PDF

    SUM65N20-30

    Contextual Info: SPICE Device Model SUM65N20-30 Vishay Siliconix N-Channel 200-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    SUM65N20-30 S-71538Rev. 30-Jul-07 SUM65N20-30 PDF

    SUM65N20-30

    Contextual Info: SUM65N20-30 New Product Vishay Siliconix N-Channel 200-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 200 0.030 @ VGS = 10 V 65 a APPLICATIONS


    Original
    SUM65N20-30 O-263 S-04920--Rev. 15-Oct-01 SUM65N20-30 PDF

    SUM65N20-30

    Abstract: SUM65N20-30-E3 80272
    Contextual Info: SUM65N20-30 Vishay Siliconix N-Channel 200-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 200 0.030 at VGS = 10 V 65a • • • • TrenchFET Power MOSFET 175 °C Junction Temperature Low Thermal Resistance Package 100 % Rg Tested


    Original
    SUM65N20-30 O-263 SUM65N20-30-E3 18-Jul-08 SUM65N20-30 SUM65N20-30-E3 80272 PDF

    Contextual Info: SPICE Device Model SUM65N20-30 www.vishay.com Vishay Siliconix N-Channel 200 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


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    SUM65N20-30 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: SUM65N20-30 Vishay Siliconix N-Channel 200-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 200 0.030 at VGS = 10 V 65a • • • • TrenchFET Power MOSFET 175 °C Junction Temperature Low Thermal Resistance Package 100 % Rg Tested


    Original
    SUM65N20-30 O-263 SUM65N20-30-E3 11-Mar-11 PDF

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


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    AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


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    SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3 PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    sum45n25

    Abstract: PPAP PPAP for thermistor 0034D sud*45N05-20L SQ7414EN ceramic disc aec capacitors siliconix an80 SUP57N20-33 SUP75N06-08
    Contextual Info: For Automotive Applications w w w. v i s h a y. c o m SELECTOR GuIdE Power MoSFeTs P O w E R M O S F E Ts V I S H AY I N T E R T E C H N O L O G Y, I N C . SeMICoNDUCTorS reCTIFIerS Schottky single, dual Standard, Fast, and ultra-Fast Recovery (single, dual)


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    VMN-SG2117-0705 sum45n25 PPAP PPAP for thermistor 0034D sud*45N05-20L SQ7414EN ceramic disc aec capacitors siliconix an80 SUP57N20-33 SUP75N06-08 PDF

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Contextual Info: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


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    SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS PDF

    IRF32N50k

    Abstract: smd diode UF IRF32N50
    Contextual Info: Uninterruptible Power Supply Table of Contents AC INPUT SECTION, Diode Bridge. 3 AC INPUT SECTION, Power Factor


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    IRFP32N50K IRFPS40N60K O-247 LPE-3325 IRF32N50k smd diode UF IRF32N50 PDF

    Payton 50863

    Abstract: inductor smd 470 P8205T 3 phase rectifier diode load 200w UCC28221 flyback 200w Zener diode smd marking U4 HPA035 UCC28220 HPA035A
    Contextual Info: User’s Guide UCC28221 200-W Evaluation Module EVM User’s Guide 1 EVM IMPORTANT NOTICE (CATEGORY B) IMPORTANT: TI is providing the enclosed HPA035A evaluation module under the following conditions: This evaluation module (EVM) being provided by Texas Instruments (TI) is intended for use for ENGINEERING


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    UCC28221 HPA035A TL431AID HPA035 IPC--A--610 UCC28220/1 SLUS544 Payton 50863 inductor smd 470 P8205T 3 phase rectifier diode load 200w flyback 200w Zener diode smd marking U4 HPA035 UCC28220 PDF