SUM11 Search Results

Contextual Info: SUM110P04-05 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ.) - 40 0.005 at VGS = - 10 V - 110 185 nC • TrenchFET Power MOSFET RoHS COMPLIANT TO-263 S G Drain Connected to Tab G D S Top View D

Contextual Info: SUM110P04-05 New Product Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a Qg (Typ) –40 0.005 @ VGS = –10 V –110 185 nC APPLICATIONS RoHS D Automotive – Motor Drives – Fuel Injection

SUM110N10-09

Abstract: sum110n10
Contextual Info: SUM110N10-09 New Product Vishay Siliconix N-Channel 100-V D-S 200_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 200_C Junction Temperature D New Package with Low Thermal Resistance PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 100 0.0095 @ VGS = 10 V

SUM110N05-06L

Abstract: SUM110N05-06L-E3
Contextual Info: SUM110N05-06L Vishay Siliconix N-Channel 55-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 55 rDS(on) (Ω) ID (A) 0.006 at VGS = 10 V 110 0.0085 at VGS = 4.5 V 92 Qg (Typ) 65 • TrenchFET Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package

SUM110P06-07L

Abstract: SUM110P06-07L-E3
Contextual Info: SUM110P06-07L Vishay Siliconix P-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.0069 at VGS = - 10 V - 110 0.0088 at VGS = - 4.5 V - 110 VDS (V) - 60 • TrenchFET Power MOSFET • Package with Low Thermal Resistance Available

SUM110N06-06

Abstract: SUM110N06-06-E3
Contextual Info: SUM110N06-06 Vishay Siliconix N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 60 0.006 110a • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT APPLICATIONS • Industrial D

SUM110N04-04

Abstract: SUM110N04-04-E3
Contextual Info: SUM110N04-04 Vishay Siliconix N-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 40 0.0035 at VGS = 10 V 110a • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT TO-263 D G G D S

Contextual Info: SUM110P04-05 Vishay Siliconix P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ.) - 40 0.005 at VGS = - 10 V - 110 185 nC • TrenchFET Power MOSFET RoHS COMPLIANT TO-263 S G Drain Connected to Tab G D S Top View D

72194

Contextual Info: New Product SUM110P08-11L Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 VDS (V) - 80 Qg (Typ) • TrenchFET Power MOSFET RoHS COMPLIANT 85 nC TO-263 S

SUM110P08-11L-E3

Abstract: SUM110P08-11L SUM110P08-11 SUM110P08_11L SUM110P08-11L rev
Contextual Info: New Product SUM110P08-11L Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0112 at VGS = - 10 V - 110 0.0145 at VGS = - 4.5 V - 109 VDS (V) - 80 Qg (Typ) • TrenchFET Power MOSFET RoHS COMPLIANT 85 nC TO-263 S

Contextual Info: SUM110N06-3m4L Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 0.0034 at VGS = 10 V 60 0.0041 at VGS = 4.5 V ID (A) • TrenchFET Power MOSFET • 100 % Rg Tested 110a RoHS COMPLIANT D TO-263 G G D S

0 281 002 507

Abstract: SUM110P08-11 SUM110P08-11 rev 51507
Contextual Info: SUM110P08-11 New Product Vishay Siliconix P-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A)b Qg (Typ) –80 0.0111@ VGS = –10 V –110 113 nC D TrenchFETr Power MOSFET APPLICATIONS D Automotive such as: – High Side Switch

11010

Contextual Info: SPICE Device Model SUM110N06-3m4L Vishay Siliconix N-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUM110N04-03P

Abstract: SUM110N04-03P-E3
Contextual Info: SUM110N04-03P Vishay Siliconix New Product N-Channel 40-V D-S 175_C MOSFET FEATURES TrenchFETr Power MOSFET 175_C Junction Temperature New Package with Low Thermal Resistance Extremely Low Qgd WFETt Technology for Low Switching Losses D 100% Rg Tested D

SUM110N04-05H

Abstract: SUM110N04-05H-E3 73131
Contextual Info: SUM110N04-05H Vishay Siliconix N-Channel 40-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ.) 40 0.0053 at VGS = 10 V 110 95 • TrenchFET Power MOSFET • 175 °C Junction Temperature • High Threshold Voltage at High Temperature

SUM110N10-09

Abstract: SUM110N10-09-E3
Contextual Info: SUM110N10-09 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested Available

313B

Contextual Info: New Product SUM110N04-2m1P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a, c 0.0021 at VGS = 10 V 110 0.0024 at VGS = 4.5 V 110 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 240 nC

Contextual Info: New Product SUM110N04-2m1P Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A)a, c 0.0021 at VGS = 10 V 110 0.0024 at VGS = 4.5 V 110 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 240 nC

AN609

Abstract: SUM110N03-03P
Contextual Info: SUM110N03-03P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SUM110N02-03

Abstract: SUM110N02-03-E3
Contextual Info: SUM110N02-03 Vishay Siliconix N-Channel 20-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A)a 20 0.0026 at VGS = 10 V 110a • • • • TrenchFET Power MOSFET 175 °C Junction Temperature Low Thermal Resistance Package High Threshold Voltage

SUM110N06-04L

Contextual Info: SPICE Device Model SUM110N06-04L Vishay Siliconix N-Channel 60-V D-S 200°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUM110N08-05

Abstract: SUM110N08-05-E3
Contextual Info: SUM110N08-05 Vishay Siliconix N-Channel 75-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 75 0.0048 at VGS = 10 V 110a • TrenchFET Power MOSFETS • Low Thermal Resistance Package Available RoHS* COMPLIANT APPLICATIONS

SUM110N06-3M9H-E3

Contextual Info: SUM110N06-3m9H Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0039 at VGS = 10 V 110a 200 • • • • • TrenchFET Power MOSFET 175 °C Junction Temperature Low Thermal Resistance Package

7120

Abstract: AN609 SUM110N04-04
Contextual Info: SUM110N04-04_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].