SUB75N Search Results

a2826

Contextual Info: Tem ic SUP/SUB75NÖ6-08 Siliconix N-Channel Enhancement-Mode Transistors 175 °C Maximum Junction Temperature Product Summary TO-220AB o TO-263 It h ;O D R A IN connected to TAB ~TT G D S Top View G D S SUB75N06-08 Top View SUP75N06-08 N-Channel M OSFET Absolute Maximum Ratings Tc = 25 °C Unless Otherwise Noted

Contextual Info: SUP/SUB75N06-07L S ilic o n ix N-Channel Enhancement-Mode Transistors Product Summary I d A rDS(on) (ß ) 0.0075 @ VGS = 10 V V(BR)DSS 60 75a 0.0085 @ VGS = 4.5 V D Q TO-220AB o TO-263 t 1 0— DRAIN connected to TAB l! TPT Top View SUB75N06-07L GD S Top View

Contextual Info: SUP/SUB75N03-07 Siliconix N-Channel Enhancement-Mode Transistors New Product ^oG PRODUCT SUMMARY r DS ON V (BR)DSS (V) •d (A) (-2) 0.007 @ V GS= 10 V 75a 0.01 @ VGS= 4.5 V 70 30 D Q TO-220AB o TO-263 t DRAIN connected to TAB 1 in G D S Top View o G D S

7093

Contextual Info: SPICE Device Model SUP/SUB75N08-10 N-Channel Enhancement-Mode Transistors Characteristics • N-channel Vertical DMOS • Macro-Model Subcircuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range

SUB75N05-06

Abstract: SUP75N05-06
Contextual Info: SUP/SUB75N05-06 Vishay Siliconix N-Channel 50-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 50 0.006 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N05-06 Top View N-Channel MOSFET SUP75N05-06 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

SUB75N05-06A

Abstract: SUP75N05-06A
Contextual Info: SUP/SUB75N05-06A Vishay Siliconix New Product N-Channel 50-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 50 0.006 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S Top View Ordering Information: SUP75N05-06A N-Channel MOSFET

SUB75N03-04

Abstract: SUP75N03-04
Contextual Info: SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 30 0.004 75a D TO-220AB TO-263 G DRAIN connected to TAB DRAIN connected to TAB G D S Top View SUB75N03-04 G D S S Top View SUP75N03-04 N-Channel MOSFET

7553a

Contextual Info: SUP/SUB75N06-12L VISHAY Siliconix T N-Channel 60-V D-S , 175°C MOSFET New Product PRODUCT SUMMARY r DS(ON) V (BR)DSS (V) •d (A) (-2) 0.012 @ VGS = 10 V 75 0.014 @ V GS= 4.5 V 70 60 D O TO-220AB o TO-263 < DRAIN connected to TAB 1 IPT G D S Top View Ô

mosfet 4800

Abstract: SUB75N06-08
Contextual Info: SPICE Device Model SUP/SUB75N06-08 Vishay Siliconix N-Channel 60-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUB75N06-07L

Abstract: SUB75N06-07L-E3 SUP75N06-07L SUP75N06-07L-E3
Contextual Info: SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (Ω) ID (A) 0.0075 at VGS = 10 V 75 0.0085 at VGS = 4.5 V • 175 °C Rated Maximum Junction Temperature Available RoHS* a COMPLIANT TO-220AB

Contextual Info: SPICE Device Model SUP/SUB75N03-04 N-Channel Enhancement-Mode MOSFET, 4-mΩ rDS on Characteristics • N-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range

Contextual Info: _ SUP/SUB75N05-07 VISHAY Vishay Siliconix New Product N-Channel 55-V D-S , 175°C MOSFET PRODUCT SUMMARY V (BR)DSS (V ) 55 (A) Id r DS(on) ( ) 0.007 @ V GS = 10 V ±75 a 0.009 @ VGS = 4.5 V TO-220AB O TO-263 f- 1 F"! G D S Top View

TF 4890

Contextual Info: SPICE Device Model SUP/SUB75N08-10 N-Channel Enhancement-Mode Transistors Characteristics • N-channel Vertical DMOS • Macro-Model Subcircuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range

SUB75N06-06

Abstract: SUP75N06-06
Contextual Info: SUP/SUB75N06-06 New Product Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0065 @ VGS = 10 V 60 "75 a 0.008 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-06 Top View

SUB75N05-06

Abstract: SUP75N05-06
Contextual Info: SUP/SUB75N05-06 Vishay Siliconix N-Channel 50-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 50 0.006 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N05-06 Top View N-Channel MOSFET SUP75N05-06 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

SUB75N06-07L

Abstract: 771a
Contextual Info: SPICE Device Model SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V D-S , 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUB75N03-07

Contextual Info: SPICE Device Model SUP/SUB75N03-07 Vishay Siliconix N-Channel 30-V x-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit Schematic) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: SUP/SUB75N08-10 Siliconix N-Channel 75-V D-S , 175_C MOSFET Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.010 75a D TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S S SUB75N08Ć10 Top View SUP75N08Ć10 NĆChannel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

Contextual Info: SUP/SUB75N05-06 Siliconix N-Channel 50-V D-S , 175_C MOSFET Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 50 0.006 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N05-06 Top View N-Channel MOSFET SUP75N05-06 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

GS 069 LF

Abstract: SUB75N06-06
Contextual Info: SUP/SUB75N06-06 VISHAY Vishay Siliconix New Product N-Channel 60-V D-S , 175°C MOSFET PRODUCT SUMMARY V(BR)DSS (V ) r DS(on) ( ) (A) Id 0.0065 @ V GS = 10 V 60 ±75 a 0.008 @ VGS = 4.5 V D TO-220AB Q o TO-263 r 1 J l D RAIN connected to TAB iptt G D S Top V iew

Contextual Info: SUP/SUB75N06-07L N-Channel Enhancement-Mode Transistors Product Summary I d A rDS(on) (ß ) 0.0075 @ VGS = 10 V 0.0085 @ VGS = 4.5 V V(BR)DSS 60 75a D Q TO-220AB o TO-263 t Jl 1 in r DRAIN connected to TAB Top View SUB75N06-07L GD S Top View SUP75N06-07L

FDS 4800

Contextual Info: Tem ic SUP/SUB75N06-08 S e m i c o n d u c t o r s N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V ) r DS(on) (£2) I d (A ) 60 0.008 75a D O T O -220A B o T O -263 r 1 Jl DRAIN connected to TAB G D S Top View G D S o s SUB75N06-08 Top View

SUB75N06-07L

Abstract: SUP75N06-07L
Contextual Info: SUP/SUB75N06-07L Vishay Siliconix N-Channel 60-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0075 @ VGS = 10 V 75a 60 0.0085 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-07L Top View N-Channel MOSFET

SUB75N06-08

Abstract: SUP75N06-08
Contextual Info: SUP/SUB75N06-08 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.008 75a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N06-08 Top View SUP75N06-08 N-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)