771A Search Results

2SJ586

Abstract: Hitachi 2SJ Hitachi DSA00396
Contextual Info: 2SJ586 Silicon P Channel MOS FET High Speed Switching ADE-208-771A Z 2nd.Edition. June 1999 Features • Low on-resistance R DS = 4.1 Ω typ. (VGS = -4 V , I D = -50 mA) R DS = 6.0 Ω typ. (VGS = -2.5 V , ID = -50 mA) • 2.5 V gate drive device. • Small package (CMPAK)

Hitachi 2SJ

Abstract: Hitachi DSA002752
Contextual Info: 2SJ586 Silicon P Channel MOS FET High Speed Switching ADE-208-771A Z 2nd.Edition. June 1999 Features • • • Low on-resistance RDS = 4.1 Ω typ. (VGS = -4 V , ID = -50 mA) RDS = 6.0 Ω typ. (VGS = -2.5 V , ID = -50 mA) 2.5 V gate drive device. Small package (CMPAK)

HN62448NI

Abstract: d0344 44-B50
Contextual Info: HN62448NI Series 524288-word x 16-bit/l048576-word x 8-bit CMOS Mask Programmable ROM HITACHI ADE-203-771A Z Rev. 1.0 Apr. 24, 1997 Description The Hitachi HN62448NI series is a 8-Mbit CMOS mask-programmable ROM organized either as 524288word x 16-bit or 1048576-word x 8-bit. As it has realized high speed normal access 100 ns and page mode

2SJ586

Abstract: Hitachi 2SJ DSA003643
Contextual Info: 2SJ586 Silicon P Channel MOS FET High Speed Switching ADE-208-771A Z 2nd.Edition. June 1999 Features • Low on-resistance R DS = 4.1 typ. (VGS = -4 V , I D = -50 mA) R DS = 6.0 typ. (VGS = -2.5 V , ID = -50 mA) • 2.5 V gate drive device. • Small package (CMPAK)

NIPPON CAPACITORS

Contextual Info: Engineering Bulletin Tentative Conductive Polymer Aluminum Solid Capacitors No.771A / Mar.2006 @Super low ESR, impedance and high heat resistance have been obtained by using conductive polymer as electrolyte. @Rated voltage range : 2.5 to 6.3Vdc, Capacitance range : 220 to 1,000MF

Contextual Info: PowerTrench Power Clip 30 V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 9.6 mΩ at VGS = 4.5 V, ID = 10 A dual package. The switch node has been internally connected to

MA771L

Abstract: UA771 771AM
Contextual Info: juA771 FAIRCHILD O Amnlifipr w D [ J@ v l rfltinn< l U l l v l IC II M l lljJ M IIw l A S chlum berger C om pany Linear Division Operational Amplifiers Description Connection Diagram 8-Lead DIP and SO-8 Package Top View) This m onolithic JFET Input Operational A m plifier incorpo­

560k ohm resistor

Abstract: resistor 270 ohm 241A* referen 771a 150 ohms resistor 710a resistor 100k ohm PDP-100 710A series
Contextual Info: Leaded Surface Mount Series 768 Technical Data Features • • • • • • • • • Medium Body Design Low Profile-Board to Network Clearance of 0.0075”±0.0025” Solid Ceramic Construction No Internal Dendrite Growth Conforms to EIA PDP-100 SOGN-0002

l 101c 681

Contextual Info: Series 752 Surface Mount Resistor Network FEATURES • High Density Packaging • Low Profile • Inputs/Outputs Available • • • • • • • - Single Row Terminations [SRT] – 08, 09, 10, 12 - Dual Row Terminations [DRT] – 16, 18, 20, 24 Nickel Barrier Solder-Coated Pads

vishay 151d

Contextual Info: Impedance Code Vishay Dale Dual Terminator Impedance Code Table IMPEDANCE CODE TABLE The following table lists the currently available impedance codes for use with Vishay Dale’s Industrial Resistor Networks that contain a dual terminator 05 schematic. For dual values not listed in this table, contact the factory. For Vishay Dale’s Military Resistor Network products

WL100

Contextual Info: nn N d rr\ oo rCÛ Z 3 TAB ± 0 .0 5 7.62 - Bs~- 3 •8 13.97 1 CONTACT / / S i IS h 0 ^ P OF H E A D E R DI A 2 ± 0 . 1 i r 2 -^B M IN Jt n 2PLACES Q 3U E O H O U SI N G ±0.1 Z J l '- f t - J l ' 2 —4>2 ° m IT " L J 2 OUTLINE 00 ROUND n DIA3MIN 2PLACES

HN462532G

Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
Contextual Info: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .

C291844065

Abstract: R205071 NFC 93050 standard MMS 128 nfc 93050 kmv3 C291147060 KMV21 R128292
Contextual Info: MMS c 50 i-2 I 75 s-2 DC-6GHz D C - l GHz GENERAL l l l l l Microminiature coaxial connectors Surface-mount receptacle SMT Fully compatible with automated pick and place machines Snap-on mating High RF performance : -VSWR:l.lOat2GHz - RF leakage : -40 dB at 2 GHz

CTS 750 series

Abstract: CTS RESISTOR NETWORK resistor 270 ohm resistor 33 ohm 3w resistor 4700 ohm 181 743 d 40 ohm 2w 470 OHM 50 W RESISTANCE resistor 220 ohms 1W resistor 330 Ohm DATA SHEET
Contextual Info: Surface Mount Series 768 Ohms EIA Code 0* 10 12 15 18 22 27 33 39 47 51 56 68 82 100 110 120 150 180 200 220 270 330 390 470 510 560 680 820 1000 1100 1200 1500 1800 2000 2200 2700 Bussed CTS Schematic 1 N +0.05 0.20 -0.03 0.008 +0.002 -0.001 Medium Body, Small Outline Products

CTS 750 series

Abstract: 330 ohm resistor pack CTS RESISTOR NETWORK 761 CTS Series 750 Resistor Network 670 OHM RESISTOR RESISTOR 4.7K NETWORK 5 tolerance cts resistor 770 & 750 CTS RESISTOR NETWORK A 473 G CTS 767 Series
Contextual Info: C T S CORP bhE D 17fll SDb 0a032b4 17T cm S in g l e -in -l in e S e r ie s 750 Resistance Range: Dielectric Strength: Standard: 220 through 1 Megfl Special: below 22S2 and above 1 Megfi Solid ceramic machine insertable SIP networks. CTS' solid ceramic construction

Contextual Info: Leaded Surface Mount Series 766 Technical Data Features • • • • • • • • • Narrow Body Design Solid Ceramic Construction No Internal Dendrite Growth Requires 30% Less Board Space Than Molded Products of the Same Power Rating Meets EIA PDP SOGN-0001 Outline

resistor 680 ohm

Abstract: resistance 1.2k ohm
Contextual Info: Leaded Surface Mount Series 768 Technical Data Features • • • • • • • • • Medium Body Design Low Profile-Board to Network Clearance of 0.005”/0.010” Solid Ceramic Construction No Internal Dendrite Growth Conforms to EIA PDP-100 SOGN-0002

Contextual Info: Leaded Surface Mount Series 768 Technical Data Features • • • • • • • • • Medium Body Design Low Profile-Board to Network Clearance of 0.0075”±0.0025” Solid Ceramic Construction No Internal Dendrite Growth Conforms to EIA PDP-100 SOGN-0002

Contextual Info: Leaded Surface Mount Series 766 Technical Data Features • • • • • • • • • Narrow Body Design Solid Ceramic Construction No Internal Dendrite Growth Requires 30% Less Board Space Than Molded Products of the Same Power Rating Meets EIA PDP SOGN-0001 Outline

Contextual Info: Leaded Surface Mount Series 768 Technical Data Features • • • • • • • • • Medium Body Design Low Profile-Board to Network Clearance of 0.0075”±0.0025” Solid Ceramic Construction No Internal Dendrite Growth Conforms to EIA PDP-100 SOGN-0002

330 ohm resistor pack

Abstract: resistor 270 ohm CTS RESISTOR NETWORK
Contextual Info: Leadless Surface Mount Series 753 Technical Data Features • • • • • • • • • High Density Packaging Low Profile Inputs/Outputs Available: Single Row Terminations SRT – 8, 9, 10, 12 Dual Row Terminations (DRT) – 16, 18, 20, 24 Nickel Barrier Solder-Coated Pads

10k ohm 16 pin dip resistor network

Abstract: 744 766 220 resistor 270 ohm 771a 744 766 01 resistor 330 Ohm DATA SHEET resistor 4700 ohm resistor 680 ohm resistor* 4.7k ohm 744 745 510
Contextual Info: Surface Mount Series 766 Ohms EIA Code 0* 000X 10 12 15 18 22 27 33 39 47 51 56 68 82 100 110 120 150 180 200 220 270 330 390 470 510 560 680 820 1000 1100 1200 1500 1800 2000 2200 2700 Bussed CTS Schematic 1 N +0.05 0.20 -0.03 0.008 +0.002 "A" DIM. -0.001

7671411

Abstract: 333 resistor pack
Contextual Info: Series 767 Surface Mount Resistor Network FEATURES • • • • • • • • • • Medium Body Design Surface Mount Gull Wing Design Solid Ceramic Construction No Internal Dendrite Growth Requires 30% Less Board Space than Molded Products of the Same Power Rating

dsPIC30F Family Reference Manual DS70046

Abstract: ds70030 9439 2n DS70030F DS70046 transistor D400 diagram A638 sab 2024 MSC 0922 1202 EA
Contextual Info: dsPIC30F Programmer’s Reference Manual High Performance Digital Signal Controllers 2005 Microchip Technology Inc. DS70030F Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.