STW26N Search Results

stp26nm60

Abstract: STW26NM60N 26NM60N STP26NM60N 26nm60 STI26NM60N STB26NM60N STB26NM60 STF26NM60N
Contextual Info: STB26NM60N, STF26NM60N, STI26NM60N STP26NM60N, STW26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages Datasheet — production data Features Type VDSS RDS on max ID STB26NM60N 600 V

W26NM60

Abstract: Zener Diodes 300v STW26NM60
Contextual Info: STW26NM60 N-CHANNEL 600V - 0.125Ω - 26A TO-247 Zener-Protected MDmesh Power MOSFET n n n n n TYPE VDSS RDS on ID STW26NM60 600 V < 0.135 Ω 30 A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

W26NM60

Abstract: w26nm60 equivalent STW26NM60
Contextual Info: STW26NM60 N-CHANNEL 600V - 0.125Ω - 26A TO-247 MDmesh MOSFET Table 1: General Features TYPE STW26NM60 • ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 600 V < 0.135 Ω 30 A TYPICAL RDS(on) = 0.125 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY

W26NM50

Abstract: STW26NM50
Contextual Info: STW26NM50 N-CHANNEL 500V - 0.10Ω - 26A TO-247 MDmesh MOSFET Table 1: General Features TYPE STW26NM50 • ■ ■ ■ Figure 1: Package VDSS RDS on ID 500 V < 0.120 Ω 30 A TYPICAL RDS(on) = 0.10 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY

Contextual Info: STW26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh II Power MOSFETs in a TO-247 package Datasheet - production data Features Order code VDS RDS on max ID STW26NM60N 600 V 0.165 Ω 20 A • 100% avalanche tested • Low input capacitance and gate charge

W26NM60

Abstract: stw26nm60
Contextual Info: STW26NM60 N-CHANNEL 600V - 0.125Ω - 26A TO-247 Zener-Protected MDmesh Power MOSFET n n n n n TYPE VDSS RDS on ID STW26NM60 600 V < 0.135 Ω 30 A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

STW26NM50FD

Abstract: STW26NM50F 500v ZENER DIODE ZVS phase-shift converters schematic diagram welding device
Contextual Info: STW26NM50FD N-CHANNEL 500V - 0.10Ω - 30A TO-247 FDmesh Power MOSFET with FAST DIODE TARGET DATA TYPE STW26NM50FD • ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.12Ω 30 A TYPICAL RDS(on) = 0.10Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

Contextual Info: STW26NM50 N-CHANNEL 500V - 0.10Ω - 26A TO-247 Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STW26NM50 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.120Ω 26 A TYPICAL RDS(on) = 0.10Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

Contextual Info: STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND N-channel 600 V, 0.145 Ω typ., 21 A, FDmesh II Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes VDSS @ Tjmax RDS on max ID 3 1 STB26NM60ND

26NM60ND

Abstract: STW26NM60ND 26nm60 26nm60n
Contextual Info: STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND N-channel 600 V, 0.145 Ω typ., 21 A, FDmesh II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes VDS @ Tjmax RDS on max ID 650 V 0.175

W26NM50

Contextual Info: STW26NM50 N-CHANNEL 500V - 0.10Ω - 26A TO-247 Zener-Protected MDmesh Power MOSFET n n n n n TYPE VDSS RDS on ID STW26NM50 500 V < 0.120 Ω 30 A TYPICAL RDS(on) = 0.10Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

Contextual Info: STW26NM50 N-channel 500 V, 0.10 Ω, 30 A TO-247 MDmesh Power MOSFET Features Type VDSS RDS on max ID STW26NM50 500 V < 0.12 Ω 30 A • High dv/dt and avalanche capabilities ■ Improved ESD capability ■ 1 Low input capacitance and gate charge 2 3

26NM60N

Abstract: STW26NM60N STP26NM60N STF26NM60N RECOVERY TIME MOSFET ST 26NM60N stp26nm60 26NM60 MOSFET 400 A stw26n 26nm
Contextual Info: STF26NM60N STP26NM60N, STW26NM60N N-channel 600 V, 0.135 Ω, 20 A MDmesh II Power MOSFET TO-220FP, TO-220, TO-247 Features Type VDSS RDS on max ID STF26NM60N 600 V < 0.165 Ω 20 A STP26NM60N STW26NM60N 600 V 600 V < 0.165 Ω < 0.165 Ω • 100% avalanche tested

26NM60N

Abstract: STW26NM60N STW26NM60N-H RECOVERY TIME MOSFET ST 26NM60N STW26NM60
Contextual Info: STW26NM60N-H N-channel 600 V, 0.135 Ω, 20 A TO-247 MDmesh II Power MOSFET Features Type VDSS RDS on max ID STW26NM60N-H 600 V < 0.165 Ω 20 A • 100% avalanche tested ■ Low input capacitance and gate charge ■ 2 Low gate input resistance TO-247

W26NM50

Abstract: STW26NM50
Contextual Info: STW26NM50 N-CHANNEL 500V - 0.10Ω - 30A TO-247 MDmesh MOSFET Table 1: General Features TYPE STW26NM50 • ■ ■ ■ Figure 1: Package VDSS RDS on ID 500 V < 0.120 Ω 30 A TYPICAL RDS(on) = 0.10 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY

26NM60N

Abstract: STF26NM60N STW26NM60N STP26NM60N RECOVERY TIME MOSFET ST 26NM60N STb26NM60N marking code 5 stp26nm60
Contextual Info: STB26NM60N, STF26NM60N STP26NM60N, STW26NM60N N-channel 600 V, 0.135 Ω, 20 A MDmesh II Power MOSFET D2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS RDS on max ID STB26NM60N 600 V < 0.165 Ω 20 A STF26NM60N 600 V < 0.165 Ω 20 A STP26NM60N 600 V

STW26NM60-H

Abstract: W26NM60 stw26nm60h w26nm60 equivalent STW26NM60 18162 W26nm
Contextual Info: STW26NM60-H N-channel 600 V, 0.125 Ω, 30 A TO-247 MDmesh II Power MOSFET Features Order code VDSS RDS on max ID STW26NM60-H 600 V < 0.135 Ω 30 A • High dv/dt and avalanche capabilities ■ Low input capacitance and gate charge ■ Low gate input resistance

ZENER 26A

Abstract: stw26nm50n
Contextual Info: STW26NM50 N-CHANNEL 500V - 0.10Ω - 30A TO-247 Zener-Protected MDmesh Power MOSFET PRELIMINARY DATA TYPE STW26NM50 n n n n n VDSS RDS on ID 500V < 0.120Ω 30 A TYPICAL RDS(on) = 0.10Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE

STW26NM60N

Abstract: STF26NM60 STP26NM60N stp26nm60 STI26NM60N 26NM60N 156-42 26NM60 stp26 STB26NM60
Contextual Info: STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N N-channel 600 V, 0.135 Ω, 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages Datasheet — production data Features Type VDSS RDS on max ID STB26NM60N 600 V < 0.165 Ω

STW26NM50

Abstract: W26NM50 N-channel MOSFET to-247
Contextual Info: STW26NM50 N-CHANNEL 500V - 0.10Ω - 26A TO-247 Zener-Protected MDmesh Power MOSFET TYPE VDSS RDS on ID STW26NM50 500 V < 0.120 Ω 30 A TYPICAL RDS(on) = 0.10Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

STW26NM50

Abstract: W26NM50
Contextual Info: STW26NM50 N-channel 500 V, 0.10 Ω, 30 A TO-247 MDmesh Power MOSFET Features Type VDSS RDS on max ID STW26NM50 500 V < 0.12 Ω 30 A • High dv/dt and avalanche capabilities ■ Improved ESD capability ■ 2 3 1 Low input capacitance and gate charge

STW26NM60

Contextual Info: STW26NM60 N-CHANNEL 600V - 0.125Ω - 26A TO-247 Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STW26NM60 • ■ ■ ■ ■ VDSS RDS on ID 600V < 0.135Ω 26 A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

W26NM50

Abstract: 26nm50 MAX220 STU26NM50 STU26NM50I STW26NM50
Contextual Info: STW26NM50 STU26NM50, STU26NM50I N-CHANNEL 500V - 0.10Ω - 26A TO-247,Max220,Max220I Zener-Protected MDmesh Power MOSFET n n n n n TYPE VDSS RDS on ID STW26NM50 STU26NM50 STU26NM50I 500 V 500 V 500 V < 0.120 Ω < 0.120 Ω < 0.120 Ω 30 A 26 A 26 A TYPICAL RDS(on) = 0.10Ω

STW26NM50

Abstract: W26NM50
Contextual Info: STW26NM50 N-CHANNEL 500V - 0.10Ω - 30A TO-247 MDmesh MOSFET Table 1: General Features TYPE STW26NM50 • ■ ■ ■ Figure 1: Package VDSS RDS on ID 500 V < 0.120 Ω 30 A TYPICAL RDS(on) = 0.10 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY