26NM Search Results

H26M* hynix

Abstract: Hynix eMMC 4.5 controller hynix emmc H26M3100 FBGA153 H26M4 FBGA169 H26M31001FPR Hynix eMMC 5.1 controller h26m5
Contextual Info: 26nm 32Gb based e-NAND product Family This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.1 / Apr. 2011 1 Document Title

stp26nm60

Abstract: STW26NM60N 26NM60N STP26NM60N 26nm60 STI26NM60N STB26NM60N STB26NM60 STF26NM60N
Contextual Info: 26NM60N, 26NM60N, 26NM60N 26NM60N, 26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages Datasheet — production data Features Type VDSS RDS on max ID 26NM60N 600 V

Contextual Info: 26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh II Power MOSFETs in a TO-247 package Datasheet - production data Features Order code VDS RDS on max ID 26NM60N 600 V 0.165 Ω 20 A • 100% avalanche tested • Low input capacitance and gate charge

26NM60N

Abstract: RECOVERY TIME MOSFET ST 26NM60N 26nm60
Contextual Info: 26NM60N N-channel 600 V, 0.135 Ω, 20 A MDmesh II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247 Features Type VDSS RDS on max ID 26NM60N 600 V < 0.165 Ω 20 A 26NM60N 600 V < 0.165 Ω 20 A 26NM60N 600 V < 0.165 Ω 20 A 26NM60N

STL-26

Contextual Info: 26NM60N N-channel 600 V, 0.160 Ω, 19 A PowerFLAT 8x8 HV ultra low gate charge MDmesh™ II Power MOSFET Features Type VDSS @ TJmax RDS(on) max ID 26NM60N 650 V < 0.185 Ω 19 A (1) 3 3 3 "OTTOMVIEW ' $ 1. The value is rated according to Rthj-case

Contextual Info: 3.5±0.2 All dimensions are in millimeters / Tolerance is +/- 0.25 unless otherwise noted Emitting Color: green Chip: InGaAlP Lens Color: water clear RoHS compliant Electrical I Optical Characteristics at Ta=25°C Symbol Parameter 201/2 Viewing Angle lv Luminous Intensity

Contextual Info: 1.3 0.4 1.13 a ► Polarity Mark All dimensions are in millimeters / Tolerance is +/- 0.1 unless otherwise noted Emitting Color: green Chip: InGaAlP Lens Color: water clear RoHS compliant Electrical I Optical Characteristics at Ta=25°C Symbol Parameter 201/2

26NM60N

Abstract: RECOVERY TIME MOSFET ST 26NM60N STF26NM60N-H STF26NM60N 26nm60
Contextual Info: 26NM60N-H N-channel 600 V, 0.135 Ω, 20 A MDmesh II Power MOSFET in TO-220FP Features Type VDSS RDS on max ID 26NM60N-H 600 V < 0.165 Ω 20 A • 100% avalanche tested ■ Low input capacitance and gate charge ■ 3 1 Low gate input resistance

MD001H

Contextual Info: - * A 9 • MD 00 1 H = * a ffi : ¡ # J H f i r y f i «SS : * - K, 56 m fé a Ibias m A P in M * 100.0 s f range(MHz) 400. 0 30. 0 25» « ( * » « mm S A o - i - 'f c f f l S S i t f i K i i . 'o 512. 0 IS O :# * ! , -70. 0 I bias=0 (RX) a ffi : S l S T ^ f i

Contextual Info: 26NM60ND, 26NM60ND, 26NM60ND, 26NM60ND N-channel 600 V, 0.145 Ω typ., 21 A, FDmesh II Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes VDSS @ Tjmax RDS on max ID 3 1 26NM60ND

26NM60ND

Abstract: STW26NM60ND 26nm60 26nm60n
Contextual Info: 26NM60ND, 26NM60ND, 26NM60ND, 26NM60ND N-channel 600 V, 0.145 Ω typ., 21 A, FDmesh II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes VDS @ Tjmax RDS on max ID 650 V 0.175

26NM60N

Abstract: STW26NM60N STP26NM60N STF26NM60N RECOVERY TIME MOSFET ST 26NM60N stp26nm60 26NM60 MOSFET 400 A stw26n 26nm
Contextual Info: 26NM60N 26NM60N, 26NM60N N-channel 600 V, 0.135 Ω, 20 A MDmesh II Power MOSFET TO-220FP, TO-220, TO-247 Features Type VDSS RDS on max ID 26NM60N 600 V < 0.165 Ω 20 A 26NM60N 26NM60N 600 V 600 V < 0.165 Ω < 0.165 Ω • 100% avalanche tested

Contextual Info: 26NM60N, 26NM60N, 26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh II Power MOSFETs in D2PAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB Order codes 3 VDS RDS on max ID 600 V 0.165 Ω 20 A 26NM60N 1 3 D²PAK 1

26NM60N

Abstract: STW26NM60N STW26NM60N-H RECOVERY TIME MOSFET ST 26NM60N STW26NM60
Contextual Info: 26NM60N-H N-channel 600 V, 0.135 Ω, 20 A TO-247 MDmesh II Power MOSFET Features Type VDSS RDS on max ID 26NM60N-H 600 V < 0.165 Ω 20 A • 100% avalanche tested ■ Low input capacitance and gate charge ■ 2 Low gate input resistance TO-247

26NM60N

Abstract: STF26NM60N STW26NM60N STP26NM60N RECOVERY TIME MOSFET ST 26NM60N STb26NM60N marking code 5 stp26nm60
Contextual Info: 26NM60N, 26NM60N 26NM60N, 26NM60N N-channel 600 V, 0.135 Ω, 20 A MDmesh II Power MOSFET D2PAK, TO-220FP, TO-220, TO-247 Features Type VDSS RDS on max ID 26NM60N 600 V < 0.165 Ω 20 A 26NM60N 600 V < 0.165 Ω 20 A 26NM60N 600 V

Contextual Info: COTCO LUMINANT DEVICE HUIZHOU LTD. SPECIFICATION FOR COTCO LED LAMP Document No: Model No : Rev. No: Date: SPE/LC503MUV1-30Q-A-MT LC503MUV1-30Q-A-MT 01 2006-12-04 Description: 30 Degree 5mm Round LED Lamp in Ultraviolet Color with Water Transparent Lens and No Stopper

Contextual Info: 26NM60N N-channel 600 V, 0.135 Ω, 20 A MDmesh II Power MOSFET in I²PAKFP package Datasheet — production data Features Type VDSS RDS on max ID 26NM60N 600 V < 0.165 Ω 20 A • Fully insulated and low profile package with increased creepage path from pin to heatsink

26NM60N

Abstract: IPAK
Contextual Info: 26NM60N N-channel 600 V, 0.135 Ω, 20 A MDmesh II Power MOSFET in I²PakFP Preliminary data Features Type VDSS RDS on max ID 26NM60N 600 V < 0.165 Ω 20 A • Fully insulated and low profile package with increased creepage path from pin to heatsink

STW26NM60N

Abstract: STF26NM60 STP26NM60N stp26nm60 STI26NM60N 26NM60N 156-42 26NM60 stp26 STB26NM60
Contextual Info: 26NM60N, 26NM60, 26NM60N, 26NM60N, 26NM60N N-channel 600 V, 0.135 Ω, 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages Datasheet — production data Features Type VDSS RDS on max ID 26NM60N 600 V < 0.165 Ω

W26NM50

Abstract: 26nm50 MAX220 STU26NM50 STU26NM50I STW26NM50
Contextual Info: 26NM50 26NM50, 26NM50I N-CHANNEL 500V - 0.10Ω - 26A TO-247,Max220,Max220I Zener-Protected MDmesh Power MOSFET n n n n n TYPE VDSS RDS on ID 26NM50 26NM50 26NM50I 500 V 500 V 500 V < 0.120 Ω < 0.120 Ω < 0.120 Ω 30 A 26 A 26 A TYPICAL RDS(on) = 0.10Ω

Contextual Info: 光 デ バ イ ス 事 業 部 Optical Device Division 概 況 光デバイス事業部は1998年に光システム事業部より分離・独立した事業部であり，非常に若い事業部であ る．発足にあたっては，急成長しつつあるDWDMマーケットの中で確固たる地位を築くという強い意志を持

hv 102 st

Abstract: 26NM60N
Contextual Info: 26NM60N N-channel 600 V, 0.160 Ω, 19 A PowerFLAT 8x8 HV ultra low gate charge MDmesh™ II Power MOSFET Features Order code VDSS @ TJmax RDS on max ID 26NM60N 650 V < 0.185 Ω 19 A (1) 3 3 3 "OTTOMVIEW ' $ 1. The value is rated according to Rthj-case

26nm60

Abstract: W26NM60 STW26NM60 w26nm60 equivalent U26NM60 26nm60 EQUIVALENT STU26NM60 Zener Diodes 300v STU26NM60I "26nm60"
Contextual Info: 26NM60 26NM60, 26NM60I N-CHANNEL 600V - 0.125Ω - 26A TO-247,Max220,Max220I Zener-Protected MDmesh Power MOSFET n n n n n TYPE VDSS RDS on ID 26NM60 26NM60 26NM60I 600 V 600 V 600 V < 0.135 Ω < 0.135 Ω < 0.135 Ω 30 A 26 A 26 A

Contextual Info: 1.2 1.6 00 Ö 0.3 :p 1.05 Polarity Mark 1 -M All dimensions are in millimeters / Tolerance is +/- 0.1 unless otherwise noted Emitting Color: green Chip: InGaAlP Lens Color: water clear RoHS compliant Electrical I Optical Characteristics at Ta=25°C Symbol