STW20N Search Results

STW20NB50

Contextual Info: STW20NB50 N - CHANNEL 500V - 0.22Ω - 20A - TO-247 PowerMESH MOSFET TYPE STW20NB50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.25 Ω 20 A TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

w20nk50z

Abstract: W20NK50 P20NK50Z STP20NK50Z STW20NK50Z ST L9 Zener STW20NK50Z Marking STMicroelectronics
Contextual Info: STP20NK50Z - STW20NK50Z N-CHANNEL 500V - 0.23Ω - 20A TO-220/TO-247 Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STP20NK50Z STW20NK50Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 500 V 500 V < 0.27 Ω < 0.27 Ω 20 A 20 A 190 W 190 W TYPICAL RDS(on) = 0.23 Ω

STW20NM60

Abstract: Mosfet 600V, 20A
Contextual Info: STW20NM60 N-CHANNEL 600V - 0.26Ω - 20A TO-247 MDmesh Power MOSFET TYPE STW20NM60 • ■ ■ ■ ■ ■ VDSS RDS on ID 600V < 0.29 Ω 20 A TYPICAL RDS(on) = 0.26Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE

20N95K5

Abstract: STP20N95K5 STW20N95K5 schematic diagram of energy saving device STF20N95K5 zener diode 3.0 b2 B2 marking code Zener
Contextual Info: STF20N95K5 STP20N95K5, STW20N95K5 N-channel 950 V, 0.275 Ω, 15.5 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH 5 Power MOSFET Preliminary data Features Type VDSS RDS on max ID PW STF20N95K5 STP20N95K5 40 W 950 V < 0.330 Ω 15.5 A STW20N95K5 TO-220 worldwide best RDS(on)

STW20NB50

Contextual Info: STW20NB50 N - CHANNEL 500V - 0.22Ω - 20A - TO-247 PowerMESH MOSFET TYPE STW20NB50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.25 Ω 20 A TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

STW20NM60N

Abstract: STW20NM60
Contextual Info: STW20NM60 N-CHANNEL 600V - 0.26Ω - 20A TO-247 MDmesh Power MOSFET TYPE STW20NM60 n n n n n n VDSS RDS on ID 600V < 0.29 Ω 20 A TYPICAL RDS(on) = 0.26Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE

W20NM60

Abstract: P20nm60 p20nm60fp w20nm60 equivalent P20NM60FP equivalent mosfet w20nm60 B20NM60-1 STP20NM60FP
Contextual Info: STB20NM60/-1 - STP20NM60FP STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET General features Type VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω 20A 20A

w20nm60

Abstract: w20nm60 equivalent p20nm60 p20nm60fp w20nm P20NM60FP equivalent STB20NM60-1 B20NM60-1 STP20NM60 Contents STW20NM60
Contextual Info: STB20NM60/-1 - STP20NM60FP STP20NM60 - STW20NM60 N-channel 600V - 0.25Ω - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET General features Type VDSS RDS on ID 600V 600V 600V 600V 600V < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω < 0.29Ω 20A 20A

STF20NM65N

Abstract: STP20NM65N 20nm65n STB20NM65N STW20NM JESD97 STI20NM65N STW20NM65N
Contextual Info: STW20NM65N-STI20NM65N-STF20NM65N STB20NM65N-STP20NM65N N-channel 650V - 0.16Ω - 19A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @TJmax RDS(on) Max ID STB20NM65N 710V < 0.19Ω 19A STI20NM65N 710V < 0.19Ω

Contextual Info: STW20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh Power MOSFET with FAST DIODE TYPE STW20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.25Ω 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE

w20nk50z

Abstract: B20NK50Z P20NK50Z STB20NK50Z STB20NK50Z-S STB20NK50ZT4 STP20NK50Z STW20NK50Z STW20NK50Z ST
Contextual Info: STP20NK50Z - STW20NK50Z STB20NK50Z - STB20NK50Z-S N-CHANNEL 500V -0.23Ω- 17A TO-220/D2PAK/I2SPAK/TO-247 Zener-Protected SuperMESH MOSFET TYPE STB20NK50Z STB20NK50Z-S STP20NK50Z STW20NK50Z • ■ ■ ■ ■ VDSS RDS on 500 500 500 500 < 0.27 Ω < 0.27 Ω

STW20NC50

Contextual Info: STW20NC50 N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh II MOSFET TYPE STW20NC50 • ■ ■ ■ ■ VDSS RDS on ID 500V < 0.27Ω 18.4A TYPICAL RDS(on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

STW20NM50

Contextual Info: STW20NM50 N-CHANNEL 500V - 0.20Ω - 20A TO-247 MDmesh Power MOSFET TYPE STW20NM50 n n n n n n VDSS RDS on ID 500V < 0.25Ω 20 A TYPICAL RDS(on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE

DD 127 D TRANSISTOR

Abstract: STW20NA50 DD 127 transistor transistor d 1557 transistor smps high voltage
Contextual Info: STW20NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STW20NA50 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 500 V < 0.27 Ω 20 A TYPICAL RDS(on) = 0.22 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

STW20NB50

Contextual Info: STW20NB50 N - CHANNEL 500V - 0.22Ω - 20A - TO-247 PowerMESH MOSFET TYPE STW20NB50 • V DSS R DS on ID 500 V < 0.25 Ω 20 A TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

STW20NB50

Contextual Info: STW20NB50 N - CHANNEL 500V - 0.22ft - 20A - TO-247 PowerMESH MOSFET TYPE V STW 20NB50 . . . . . . . dss 500 V R d S o i i < 0 .2 5 Q. Id 20 A TYPICAL RDs(on) = 0.22 £2 EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

uc3843 12v to 24v

Abstract: uc3842 half bridge forward converter UC3843 uc3845 half bridge mc34063 5v 4A uc3842 200w uc3843 12v to 40v stepdown uc3842 uc3844 100w uc3842 full bridge
Contextual Info: POWER SUPPLIES HIGH POWER FULL & HALF BRIDGE CONVERTER RECTIFICATION BRIDGES Type OUTPUT POWER AC < 1000W 110V 220V 380V ▲ STP11NB40▲ STP10NA40/FI STW16NA40 STW15NB50▲ STU14NA50▲ STW20N350▲ STH15NA50FI STP9NB50/FI▲ STP8NA50/FI STP6NB50▲ STW12NA50

STW20NM60

Contextual Info: STW20NM60 N-CHANNEL 650V @Tjmax - 0.26Ω - 20A TO-247 MDmesh MOSFET TYPE STW20NM60 VDSS @Tjmax RDS(on) ID 650V < 0.29 Ω 20 A TYPICAL RDS(on) = 0.26Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE

S-1380

Abstract: STW20NM50FD ZVS phase-shift converters
Contextual Info: STW20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-247 FDmesh Power MOSFET with FAST DIODE TYPE STW20NM50FD • ■ ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.25Ω 20 A TYPICAL RDS(on) = 0.22Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE

w20nm60

Abstract: w20nm60fd P20NM60FD ZVS phase-shift converters STW20NM60FD F20NM60D STF20NM60D STP20NM60FD
Contextual Info: STP20NM60FD - STF20NM60D STW20NM60FD N-CHANNEL 600V - 0.26Ω - 20A TO-220/TO-220FP/TO-247 FDmesh POWER MOSFET with FAST DIODE TYPE STP20NM60FD STF20NM60D STW20NM60FD VDSS RDS(on) ID Pw 600 V 600 V 600 V < 0.29 Ω < 0.29 Ω < 0.29 Ω 20 A 20 A 20 A

20NB50

Abstract: STW20NB50
Contextual Info: STW20NB50  N - CHANNEL 500V - 0.22Ω - 20A - TO-247 PowerMESH MOSFET TYPE STW 20NB50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.25 Ω 20 A TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: STW20NK70Z N-CHANNEL 700V - 0.25Ω - 20A TO-247 Zener-Protected SuperMESH MOSFET TYPE STW20NK70Z VDSS RDS on ID Pw 700 V < 0.285 Ω 20 A 350 W TYPICAL RDS(on) = 0.25 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES

DD 127 D TRANSISTOR

Abstract: stw20na50 1557 b transistor
Contextual Info: STW20NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STW20NA50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.27 Ω 20 A TYPICAL RDS(on) = 0.22 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

mosfet 20A 500V

Abstract: power mosfet 500v 20a circuit STW20NM50
Contextual Info: STW20NM50 N-CHANNEL 500V - 0.20Ω - 20A TO-247 MDmesh Power MOSFET TARGET DATA TYPE STW20NM50 • ■ ■ ■ ■ ■ VDSS RDS on ID 500V < 0.23Ω 20 A TYPICAL RDS(on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE