STS5 Search Results

Contextual Info: STS733 PNP Silicon Transistor Description PIN Connection • General small signal amplifier E Features • Low collector saturation voltage : VCE sat =-0.3V [IC=-20mA, IB=-2mA] • Low output capacitance : Cob=2.8pF(Typ.) • Complementary pair with STS5343

STS5PF30L

Contextual Info: STS5PF30L P-CHANNEL 30V - 0.070 Ω - 5A SO-8 STRIPFET POWER MOSFET TYPE STS5PF30L • ■ ■ VDSS RDS on ID 30V <0.080 Ω 5A TYPICAL RDS(on) = 0.070 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of

STS5N150

Contextual Info: STS5N150 N-CHANNEL 150V - 0.045 Ω - 5A SO-8 LOW GATE CHARGE STripFET POWER MOSFET TARGET DATA TYPE STS5N150 • ■ ■ VDSS RDS on ID 150 V <0.06 Ω 5A TYPICAL RDS(on) = 0.045 Ω EXTREMELY HIGH dv/dt CAPABILITY EXTREMELY LOW GATE CHARGE DESCRIPTION

STS5

Contextual Info: Werkzeuge für die Kabelbearbeitung Tools for cable treatment Outillage pour traitement de câbles KHP-STS2,5 KHP-STS5 Stegstanze auf Basis einer Kniehebelpresse, für das endseitige Ausstanzen von Rasterstegleitungen 1. Einsatzgebiet Leitung Raster KHP-STS2,5

STS5343

Abstract: 90550
Contextual Info: STS5343 Absolute maximum ratings Ta=25°C Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 50 V Emitter-Base voltage VEBO 5 V Collector current IC 150 mA Collector dissipation PC 625 mW Junction temperature

STS5PF30L

Abstract: P Channel STripFET
Contextual Info: STS5PF30L P-CHANNEL 30V - 0.070 Ω - 5A SO-8 STRIPFET POWER MOSFET TYPE STS5PF30L • ■ ■ VDSS RDS on ID 30V <0.080 Ω 5A TYPICAL RDS(on) = 0.070 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of

Contextual Info: STS5PF30L P-channel 30V - 0.045Ω - 5A SO-8 STripFET Power MOSFET General features Type VDSS RDS on ID STS5PF30L 30V <0.055Ω 5A • Conduction losses reduced ■ Switching losses reduced ■ Low threshold drive ■ Standard outline for easy automated surface

STS5N15F3

Contextual Info: STS5N15F3 N-channel 150 V, 0.045 Ω, 5 A, SO-8 STripFET III Power MOSFET Features Type VDSS RDS on max ID STS5N15F3 150 V < 0.057 Ω 5A • Low on-resistance ■ Low input capacitance and gate charge ■ Low gate input resistance SO-8 Application ■

GD506

Contextual Info: IV- T STS5- - BJT- n o n a i Note: Im p o r ta n t Dim ension. W aterproof Rate : IP67 Housing:Black.ABS Pin:Copper Alloy,Gold Plated Seals fo r Cable OD:06.Omm-~ 10.0mm -< © 5 0 .6 B Coble!&fflOD:06.Om nn~0 10.0m m

STS5342

Abstract: STS1979
Contextual Info: STS5342 Semiconductor NPN Silicon Transistor Description • Medium power amplifier Features • Large collector current : IC=500mA • Low collector saturation voltage enabling low-voltage operation • Complementary pair with STS1979 Ordering Information

STS5DNE30L

Contextual Info: STS5DNE30L N - CHANNEL 30V - 0.039Ω - 5A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE STS5DNE30L • ■ ■ V DSS R DS on ID 30 V < 0.045 Ω 5A TYPICAL RDS(on) = 0.039 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE

Contextual Info: STS1980 Semiconductor PNP Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE sat =-0.3V(Max.) • Low output capacitance : Cob=4pF(Typ.) • Complementary pair with STS5343 Ordering Information

STS5DNF20V

Contextual Info: STS5DNF20V N-CHANNEL 20V - 0.030 Ω - 5A SO-8 2.7V-DRIVE STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS5DNF20V 20 V < 0.040 Ω ( @ 4.5 V ) < 0.045 Ω ( @ 2.7 V ) 5A TYPICAL RDS(on) = 0.030 Ω @ 4.5 V TYPICAL RDS(on) = 0.037 Ω @ 2.7 V

STS1979

Abstract: STS5342
Contextual Info: STS1979 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • Large collector current : ICMax=-500mA • Suitable for low-Voltage operation because of its low saturation voltage • Complementary pair with STS5342 Ordering Information

STS5343 equivalent

Abstract: sts1980 "Small Signal Amplifier" sts5343 STS1980N STS5343N
Contextual Info: STS5343N Semiconductor NPN Silicon Transistor Description • General small signal amplifier Features • Low collector saturation voltage : VCE sat =0.25V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with STS1980N Ordering Information

S5PF30L

Abstract: JESD97 STS5PF30L STS5PF30L ST
Contextual Info: STS5PF30L P-channel 30V - 0.045Ω - 5A SO-8 STripFET Power MOSFET General features Type VDSS RDS on ID STS5PF30L 30V <0.055Ω 5A • Conduction losses reduced ■ Switching losses reduced ■ Low threshold drive ■ Standard outline for easy automated surface

Contextual Info: STS5DNF20V N-channel 20 V, 0.030 Ω, 5 A SO-8 2.7 V, drive STripFET II Power MOSFET Features Order code VDSS RDS on max. ID STS5DNF20V 20 V < 0.040Ω @ 4.5 V < 0.045Ω @ 2.7 V 5A • Ultra low threshold gate drive (2.7 V) ■ Standard outline for easy automated surface

STS5NS150

Contextual Info: STS5NS150 N-CHANNEL 150V - 0.075 Ω - 5A SO-8 LOW GATE CHARGE STripFET II POWER MOSFET TYPE VDSS RDS on ID STS5NS150 150 V <0.1 Ω 5A TYPICAL RDS(on) = 0.075 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION

STS5DNE30L

Contextual Info: STS5DNE30L N - CHANNEL 30V - 0.039Ω - 5A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE STS5DNE30L V DSS R DS on ID 30 V < 0.045 Ω 5A TYPICAL RDS(on) = 0.039 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE •

STS5PF30L

Abstract: DSA00396448
Contextual Info: STS5PF30L  P - CHANNEL 30V - 0.053Ω - 5A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE STS5PF 30L • ■ ■ V DSS R DS on ID 30 V < 0.060 Ω 5 A TYPICAL RDS(on) = 0.053 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE

STS5NF60L

Contextual Info: STS5NF60L N - CHANNEL 60V - 0.045Ω - 5A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE STS5NF60L • ■ ■ V DSS R DS on ID 60 V < 0.055 Ω 5A TYPICAL RDS(on) = 0.045 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE

STS5PF20V

Contextual Info: STS5PF20V P-CHANNEL 20V - 0.065Ω - 5A SO-8 2.5V-DRIVE STripFET II POWER MOSFET TYPE STS5PF20V • ■ ■ ■ VDSS RDS on ID 20 V < 0.080 Ω (@4.5V) < 0.10 Ω (@2.5V) 5A TYPICAL RDS(on) = 0.065Ω (@4.5V) TYPICAL RDS(on) = 0.085Ω (@2.5V) ULTRA LOW THRESHOLD GATE DRIVE (2.5V)

JESD97

Abstract: STS5N15M3
Contextual Info: STS5N15M3 N-channel 150 V, 45 mΩ, 5 A, SO-8 ultra low gate charge MDmesh III Power MOSFET Features Type VDSS RDS on max ID STS5N15M3 150 V < 0.057 Ω 5A • Low on-resistance ■ Low input capacitance and gate charge ■ Low gate input resistance ■

Contextual Info: STS5PF20V P-CHANNEL 20V - 0.065Ω - 5A SO-8 2.5V-DRIVE STripFET II POWER MOSFET TYPE STS5PF20V VDSS RDS on ID 20 V < 0.080 Ω (@4.5V) < 0.10 Ω (@2.5V) 5A TYPICAL RDS(on) = 0.065Ω (@4.5V) TYPICAL RDS(on) = 0.085Ω (@2.5V) ULTRA LOW THRESHOLD GATE DRIVE (2.5V)