STROBO Search Results

Contextual Info: SILICON NPN EPITAXIAL TY P E 2SC3420 STROBO FLASH APPLICATIONS. Unit in nun MEDIMUM POWER AMPLIFIER APPLICATIONS. Ì.3MAX. FEATURES: . High DC Current Gain : hpE=140~600 Vc e =2V, Ic =0.5A bFE=70(Min.) (Vqj;=2V, Ic =4A) . Low Saturation Voltage : vCE(sat)=l •0(Max.) (Ic =4A, Ib =0.1A)

Contextual Info: T o s h i b a o i s c r e t e /o p t o } 9097250 T O S H IB A Sb DE^jj TOT72SD □DD7Slh 1 D IS C R E T E /O P T O > 33 - o 7 2SC2270 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBO FLASH APPLICATIONS, Unit in nun MEDIMUM POWER AMPLIFIER APPLICATIONS. 7.9MAX.

Contextual Info: 2SC3072 SILICON NPN EPITAXIAL T Y P E STROBO FLASH APPLICATIONS. Unit in iran MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES: . High DC Current Gain: hFE=140-~450 VCE=2V, IC=0.5A hFE=70(Min.) (VcE=2V, Ic =4A) . Low Collector Saturation Voltage : VCE(sat)=1.0V(Max.) (Ic=4A, Ib =0.1A)

S6370

Contextual Info: S6370 THYRISTOR SILICON DIFFUSED JUNCTION Unit in mm LOW POWER SWITCHING APPLICATIONS STROBO TRIGGER 0 5 . 1 MAX. • Repetitive Peak Off-State Voltage VDRM=400V • Repetitive Peak Reverse Voltage Vr r m =4° o v • Fast Turn On Time tgt= l .5 jjs I 1

Contextual Info: CRF02 TOSHIBA Fast Recovery Diode Silicon Diffused Type CRF02 Power Supply Applications Strobo Flasher Applications Unit: mm • Repetitive peak reverse voltage: VRRM = 800 V • Average forward current: IF AV = 0.5 A • Low forward voltage: VFM = 3.0 V (max.)

2SA1291

Contextual Info: ["O rdering number: E N 1201C 2SA1291/2SC3255 N0.I2OIC PN P/N PN Epitaxial P la n ar Silicon Transistors SAW O i 60V/10A High-Speed Switching Applications Applications • Various inductance lamp drivers for electrical equipment. •Inverters, converters strobo, flash, fluorescent lamp lighting circuit .

IPF 830

Abstract: 0047PF TIC 1602
Contextual Info: MULTILAYER CERAM IC CHIP CAPACITORS HCT Series Low tan 5 capacitor for stroboscope circuit Features Excellent dumping characteristics (Trigger characteristic) Low tan 6 (1/2 of standard type) Low ESR (1/2 o f standard type) Excellent bias properties Our patented copper barrier term inal allow s flow soldering. This

width10ms

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1242 STROBO FLASH APPLICATIONS. Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS. 6.8 MAX. FEATURES: . hFE=100~ 320 VCe =-2V, Ic =-0.5A . hFE=70(Min.) (Vc e =-2V, Ic=-4A) . Low Collector Saturation Voltage : VcE(sat)=~l-OV(Max.) (Ic=-4A, Ib =-0.1A)

2SC5765

Contextual Info: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 Medium Power Amplifier Applications Strobo Flash Applications Low Saturation Voltage: Unit: mm VCE sat (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic

2SA1300

Contextual Info: TOSHIBA 2SA1300 2 S A 1 300 TOSHIBA TRANSISTOR STROBO FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm M EDIUM PO W ER AM PLIFIER APPLICATIONS • High DC Current Gain and Excellent hEE Linearity : hFE (1) = 140-600 (Vqe = - IV, Iq = -0.5A)

IC tl 072

Abstract: 2SD0965 2SD965
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0965 (2SD965) Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope Unit: mm 4.0±0.2 0.7±0.2 • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE  DESCRIPTION * Strobo Flash Applications. * Medium Power Amplifier Applications.  FEATURES * High DC Current Gain and Excellent hFE Linearity. * hFE 1 =140-600, (VCE= -1V,IC= -0.5A)

sb 320 toshiba audio power amplifier

Contextual Info: Sb TOSHIBA {D I SC RE TE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO 2SA1327 » F I S C H T E S D 0007314 0 5óC 07314' » T “"3 ^ - / 7 SILICO N PNP E P IT A X IA L TYPE (PCT PROCESS) STROBO FLASH APPLICATIONS. Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. 10L3M A X.

Contextual Info: 2SA1300 T O SH IB A 2 S A 1 300 TO S H IB A TRANSISTOR STROBO FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm M E D IU M POWER AMPLIFIER APPLICATIONS • High DC Current Gain and Excellent hEE Linearity :h F E (l) = 14O~6OO(V0E= - I V , I q = —0.5A)

KTA1241

Abstract: transistor kta1241 transistor pnp 2V 0,5A 1W
Contextual Info: SEMICONDUCTOR KTA1241 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. B D FEATURES A hFE=100 320 VCE=-2V, IC=-0.5A . hFE=70(Min.) (VCE=-2V, IC=-4A). P DEPTH:0.2 Low Collector Saturation Voltage. G C : VCE(sat)=-0.5V (IC=-3A, IB=-75mA).

KTC4377

Contextual Info: SEMICONDUCTOR KTC4377 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. A FEATURES High DC Current Gain and Excellent hFE Linearity G 600 VCE=1V, IC=0.5A J B E : hFE(1)=140 C H : hFE(2)=70(Min.), 140(Typ.) (VCE=1V, IC=2A).

MAR 641 TRANSISTOR

Abstract: 2SD1934
Contextual Info: Transistor 2SD1934 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope Unit: mm 5.9±0.2 4.9±0.2 • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage

A1300 transistor

Abstract: A1300 GR transistor A1300 A1300 A1300 y BTA1300A3 a13003 C816A3 bta130
Contextual Info: CYStech Electronics Corp. Spec. No. : C816A3 Issued Date : 2003.04.15 Revised Date : Page No. : 1/4 Low VCE SAT PNP Epitaxial Planar Transistor BTA1300A3 Description The BTA1300A3 is designed especially for use in strobo flash and medium power amplifier applications.

2SB1288

Contextual Info: Transistor 2SB1288 Silicon PNP epitaxial planer type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.0±0.2 8.0±0.2 5.0±0.2 • Features ■ Absolute Maximum Ratings 0.7±0.1 0.7±0.2 ● Low collector to emitter saturation voltage VCE sat .

CR3AM

Abstract: CR3AMZ8 CR3AMZ 251C thyristor application cm700f
Contextual Info: MITSUBISHI THYRISTOR CR 3AM Z LOW POW ER, INVERTER USE LEAD-MOUNTED T Y P E D ES C R IP TIO N M itsubishi type C R 3 A M Z - 8 is glass passivated jun ctio n type and m olded silicon plastic thyristor fo r use in autom atic strobo flashers. T h is device is specially designed to have short tu rn -o ff tim e and large pulse current

2SD966

Contextual Info: ST 2SD966 NPN Silicon Epitaxial Planar Transistor for low-frequency power amplification and stroboscope. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SA1300

Contextual Info: ST 2SA1300 PNP Silicon Epitaxial Planar Transistor for strobo flash and medium power amplifier applications. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: T O S H IB A TFR1 N,TFR1T TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TFR1N, TFR1T STROBO FLASHER APPLICATIONS. FAST RECOVERY • • • Unit in mm Average Forward Current : Ijr (AV) = 0.5A Repetitive Peak Reverse Voltage : Vr rm = 1000, 1500V Reverse Recovery Time

SC3746

Contextual Info: Ordering num ber: E N 1973 A 2SA1469/2SC3746 N0.1973A PNP/NPN E pitaxial P lan ar Silicon Transistors 60V/5A High-Speed Switching Applications Applications • Various inductance lamp drivers for electrical equipment. • Inverters, converters strobo, flash, fluorescent lamp lighting circuit .