2SC5765 Search Results

2SC5765

Contextual Info: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 Medium Power Amplifier Applications Strobo Flash Applications Low Saturation Voltage: Unit: mm VCE sat (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic

2sc5765

Contextual Info: UTC 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH DESCRIPTION * medium power amplifier applications * strobo flash applications 1 FEATURES TO-92SP *Low Saturation Voltage: VCE sat = 0.27 V (max.), (Ic = 3A / IB =60 mA) 1.EMITTER

Contextual Info: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Unit: mm Low Saturation Voltage: VCE sat (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Absolute Maximum Ratings (Ta = 25°C)

2sC5765 transistor

Abstract: 2SC5765
Contextual Info: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Unit: mm Low Saturation Voltage: VCE sat (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Maximum Ratings (Ta = 25°C) Characteristic

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH „ DESCRIPTION medium power amplifier applications strobo flash applications „ FEATURES * Low Saturation Voltage: VCE sat = 0.27 V (max.), (Ic = 3A / IB =60 mA)

2SC5765

Contextual Info: 2SC5765 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 2SC5765 ○ 中電力増幅用 ○ ストロボ用 • 単位: mm コレクタ飽和電圧が低い。 : VCE sat = 0.27 V (最大) (IC = 3 A/IB = 60 mA) 絶対最大定格 (Ta = 25°C)

Contextual Info: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Low Saturation Voltage: VCE sat (1) = 0.27 V (Max.) (IC = 3 A/IB = 60 mA) Maximum Ratings (Ta = 25°C) Characteristic

Contextual Info: UTC 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH DESCRIPTION * medium power amplifier applications * strobo flash applications 1 FEATURES TO-92SP *Low Saturation Voltage: VCE sat = 0.27 V (max.), (Ic = 3A / IB =60 mA) 1.EMITTER

2SC5765

Abstract: 2sC5765 transistor
Contextual Info: 2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Unit: mm Low Saturation Voltage: VCE sat (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA) Maximum Ratings (Ta = 25°C) Characteristic

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR M EDI U M POWER AM PLI FI ER ST ROBO FLASH ̈ DESCRI PT I ON medium power amplifier applications strobo flash applications ̈ FEAT U RES * Low Saturation Voltage: VCE sat = 0.27 V (max.),

TC7SZ08FU

Abstract: lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU SOT-24 te85l F TC7W04F 2sc2240 equivalent
Contextual Info: General-Purpose Small-Signal Surface-Mount Devices PRODUCT GUIDE CONTENTS 1. Package Information 3 to 6 2. Small Signal Transistors and Diodes 2.1 New Products 2.2 Small-Signal Transistors 2.3 Bias Resistor Transistora BRTs 6.1 Single Output type 6.2 Dual Output type

2SC5471

Abstract: 2SC5853 2sa1015 transistor 2sc1815 transistor 2SA970 transistor 2SC5854 transistor 2sc1815 2Sc5720 transistor 2SC5766 Low-Frequency Low-Noise PNP transistor
Contextual Info: Part Number Product Category Polarity Collector-Emitter Voltage V_CEO,max V 2SC1815 Transistor for Low-Frequency Small-Signal Amplification NPN 50.0 150.0 0.25 2SA1015 Transistor for Low-Frequency Small-Signal Amplification PNP -50.0 -150.0 -0.3 2SC2458 Transistor for Low-Frequency Small-Signal Amplification NPN

2SJ74

Abstract: 2SC3136 2SK118 2SC1815 2SA1015 2SC1815 2sc2240 equivalent 2SA1349 2SA1015 2SK241 2SC2348
Contextual Info: 主要特性一覧表 [2] [ 2 ] 主要特性一覧表 TO-92 タイプ SC-43 1. TO-92 <トランジスタ> 形 名 NPN 2SC1815 PNP 2SA1015 O: 70~140 VCEO IC PC (V) (mA) (mW) 50 150 400 Y: 120~240  2SC732TM L L 2SC1815○ 2SA1015○ hFE 70~700/ 400 GR: 200~400