STPS640 Search Results

S640C

Abstract: RECTIFIER DIODE 5A, 2000V VRRM STPS640CB STPS640CB-TR STPS640CF STPS640CT
Contextual Info: STPS640CT/CF/CB POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 2x3A VRRM 40 V Tj (max) 150 °C VF (max) 0.57 V A1 K A2 FEATURES AND BENEFITS n n n n n n n n n K VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING

Contextual Info: STPS640C-Y Automotive power Schottky rectifier Datasheet − production data Description A1 K A2 K This dual Schottky rectifier is designed for switch mode power supplies and other power converters. This device is intended for use in low and medium voltage operation, and in particular high

Contextual Info: STPS640CM Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)135# V(RRM)(V) Rep.Pk.Rev. Voltage40 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.75 V(FM) Max.(V) Forward Voltage.84 @I(FM) (A) (Test Condition)6.0

640CF

Abstract: T0-220AB 620CT STPS630CF T0220AB STPS620CF STPS620CT STPS630CT STPS640CF STPS640CT
Contextual Info: SGS -THOMSON BJ1OTWD Ì Ì tpÌ ssoct/cf STPS640CT/CF POWER SCHOTTKY RECTIFIER • ■ ■ ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP HIGH AVALANCHE CAPABILITY LOW THERMAL RESISTANCE

S640C

Abstract: TO-220AB Package TO-220AB transistor package smd transistor marking l6 diode MARKING A1 L7 diode smd marking f2 ST Low Forward Voltage Schottky Diode 125 diode diode marking H2
Contextual Info: STPS640CT/CF/CB POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 2x3A VRRM 40 V Tj (max) 150 °C VF (max) 0.57 V A1 K A2 K FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD DROP VOLTAGE

Contextual Info: STPS640CT/CF/CB _POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS I f a v 2 x3 A V rrm 40 V Tj (max) 150 °C V f (max) 0.57 V FEATURES AND BENEFITS • ■ ■ ■ ■ ■ ■ VERYSMALLCONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES

STPS640CM

Contextual Info: STPS640CM  PowerSO-10TM POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 2x3A VRRM 45 V VF 0.57 V FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH AVALANCHE CAPABILITY HIGH DISSIPATION MINIATURE PACKAGE SURFACE MOUNT TECHNOLOGY

S640C

Abstract: STPS640 s640 JESD97 STPS640C STPS640CB STPS640CB-TR STPS640CFP STPS640CT DF2-L2
Contextual Info: STPS640C Power Schottky rectifier Main product characteristics A1 K IF AV 2x3A VRRM 40 V Tj (max) 150° C VF(max) 0.57 V A2 K A2 Features and benefits • Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward drop voltage

S640C

Abstract: STPS640CB STPS640CB-TR STPS640CF STPS640CT
Contextual Info: STPS640CT/CF/CB  POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 2 x3A A1 VRRM Tj (max) 40 V 150 °C A2 VF (max) 0.57 V K K FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD DROP VOLTAGE

MARKING CF

Abstract: 620CT CF marking
Contextual Info: STPS620CT/CF STPS630CT/CF STPS640CT/CF POWER SCHOTTKY RECTIFIER . . . . VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP HIGH AVALANCHE CAPABILITY LOW THERMAL RESISTANCE INSULATED PACKAGE : Insulating voltage = 2000V DC

S640C

Abstract: STPS640CB STPS640CB-TR STPS640CF STPS640CT SMD diode l6
Contextual Info: STPS640CT/CF/CB  POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 2 x3A A1 VRRM Tj (max) 40 V 150 °C A2 VF (max) 0.57 V K K FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD DROP VOLTAGE

STPS640CF

Abstract: STPS640CFP STPS640CT S640C STPS640CB STPS640CB-TR Diode SMD ED 98 930 diode smd
Contextual Info: STPS640CT/CF/CB/CFP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 2x3A A1 VRRM 40 V Tj (max) 150 °C VF (max) 0.57 V K A2 FEATURES AND BENEFITS n VERY SMALL CONDUCTION LOSSES n NEGLIGIBLE SWITCHING LOSSES n EXTREMELY FAST SWITCHING n LOW FORWARD DROP VOLTAGE

smd diode 444

Contextual Info: fZ * 7 S G S -T H O M S O N 5 IU 1 O T « ! 7# STPS640CM _POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS 2x3 A If av V rrm 45 V Vf 0.57 V FEATURES AND BENEFITS • ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES

620CT

Abstract: STPS620CF STPS620CT STPS630CF STPS630CT STPS640CF STPS640CT T0220AB
Contextual Info: SGS -THOMSON BJ1OTWD Ì Ì tpÌ ssoct/cf STPS640CT/CF POWER SCHOTTKY RECTIFIER • ■ ■ ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP HIGH AVALANCHE CAPABILITY LOW THERMAL RESISTANCE

Contextual Info: STPS640CT Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)135Ô V(RRM)(V) Rep.Pk.Rev. Voltage40 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.75 V(FM) Max.(V) Forward Voltage.84 @I(FM) (A) (Test Condition)6.0

Contextual Info: STPS640C Power Schottky rectifier Main product characteristics A1 K IF AV 2x3A VRRM 40 V Tj (max) 150° C VF(max) 0.57 V A2 K A2 A1 Features and benefits • Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward drop voltage

Contextual Info: STPS640CB -TR  POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) 2x3 A VRRM VF (max) 40 V 0.57 V PRELIMINARY DATASHEET 2, 4(TAB) 1 3 FEATURES AND BENEFITS 4 NEGLIGIBLE SWITCHING LOSSES LOW FORWARD DROP VOLTAGE LOW CAPACITANCE HIGH REVERSE AVALANCHE SURGE

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

stps20lcd

Abstract: stps60SM200 BAT48 SMD stps30m100 30175cw STPS30L120 1N5711 SMD 1N5817 523 STPS40M100 1n5817 SOD-123
Contextual Info: Rectifiers High power efficiency and density Selection guide November 2009 STMicroelectronics - November 2009 - Printed in Italy - All rights reserved The STMicroelectronics corporate logo is a registered trademark of the STMicroelectronics group of companies.

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced