STPR820D Search Results

r810d

Contextual Info: STPR805DB-STPR820DB Vishay Lite-On Power Semiconductor 8.0A Ultra-Fast Glass Passivated Rectifiers Features • G lass passivated die construction • Diffused junction • S u p e r-fa s t sw itching fo r high efficiency • High current capability and low forw ard voltage

STPR805DB

Abstract: STPR810DB STPR815DB STPR820DB
Contextual Info: STPR805DB thru STPR820DB Ultra Fast Recovery Diodes Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode STPR805DB STPR810DB STPR815DB STPR820DB VRRM V 50 100 150 200 VRMS V 35 70 105 140 Symbol Dim. VDC V 50 100 150

STPR805DB

Abstract: STPR820DB
Contextual Info: STPR805DB - STPR820DB 8.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Features Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 100A Peak Low Reverse Leakage Current

STPR810D

Abstract: STPR820D
Contextual Info: STPR810D thru STPR820D Ultra Fast Recovery Diodes Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode STPR810D STPR820D Symbol VRRM V 100 200 VRMS V 70 140 Dim. VDC V 100 200 Characteristics Inches Min. Max. 0.500 0.580

STPR805DB

Abstract: STPR810DB STPR815DB STPR820DB
Contextual Info: STPR805DB thru STPR820DB Ultra Fast Recovery Diodes Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode STPR805DB STPR810DB STPR815DB STPR820DB VRRM V 50 100 150 200 VRMS V 35 70 105 140 Symbol Dim. VDC V 50 100 150

ISOWATT220AC

Abstract: STPR820D STPR820F STPR820FP
Contextual Info: STPR820D/F/FP HIGH EFFICIENCY FAST RECOVERY DIODES MAIN PRODUCTS CHARACTERISTICS IF AV 8A VRRM 200 V Tj (max) 150°C VF (max) 0.99 V trr (max) 30 ns A A K K FEATURES Suited for SMPS Very low forward losses Negligible switching losses High surge current capability

Contextual Info: STPR805DB - STPR820DB 8.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Features G lass Passivated D ie Construction Diffused Junction TQ-220AC Lh S u p er-F ast Switching for High Efficiency High C urrent C apability and Low Forward V oltag e Drop -*| |«-M JT c

ISOWATT220AC

Abstract: STPR820D STPR820F
Contextual Info: STPR820D/F  ULTRA-FAST RECOVERY RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS IF AV 8A VRRM 200 V Tj (max) 150°C VF (max) 0.99 V trr (max) 30 ns A A K K FEATURES SUITED FOR SMPS LOW LOSSES LOW FORWARD AND REVERSE RECOVERY TIME HIGH SURGE CURRENT CAPABILITY

ISOWATT220AC

Abstract: STPR820D STPR820F STPR820FP
Contextual Info: STPR820D/F/FP HIGH EFFICIENCY FAST RECOVERY DIODES MAIN PRODUCTS CHARACTERISTICS IF AV 8A VRRM 200 V Tj (max) 150°C VF (max) 0.99 V trr (max) 30 ns A A K K FEATURES Suited for SMPS Very low forward losses Negligible switching losses High surge current capability

Contextual Info: STPR805DB - STPR820DB 8.0A SUPER-FAST GLASS PASSIVATED RECTIFIER Features • · · · · · · Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 100A Peak

STPR810D

Abstract: RECTIFIER DIODES SGS ISOWATT220AC STPR810F STPR820D STPR820F
Contextual Info: STPR810D/F STPR820D/F ULTRA FAST RECOVERY RECTIFIER DIODES . . . SUITED FOR SMPS LOW LOSSES LOW FORWARD AND REVERSE RECOVERY TIME HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY A A K DESCRIPTION Low cost single chip rectifier suited for switchmode

Contextual Info: STPR820D/F/FP  HIGH EFFICIENCY FAST RECOVERY DIODES MAIN PRODUCTS CHARACTERISTICS IF AV 8A VRRM 200 V Tj (max) 150°C VF (max) 0.99 V trr (max) 30 ns A A K K FEATURES Suited for SMPS Very low forward losses Negligible switching losses High surge current capability

TO-220FPAC

Abstract: ISOWATT220AC STPR820D STPR820F STPR820FP morocco L3
Contextual Info: STPR820D/F/FP  HIGH EFFICIENCY FAST RECOVERY DIODES MAIN PRODUCTS CHARACTERISTICS IF AV 8A VRRM 200 V Tj (max) 150°C VF (max) 0.99 V trr (max) 30 ns A A K K FEATURES Suited for SMPS Very low forward losses Negligible switching losses High surge current capability

STPR805DF

Abstract: STPR810DF STPR815DF STPR820DF
Contextual Info: STPR805DF thru STPR820DF Ultra Fast Recovery Diodes Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode STPR805DF STPR810DF STPR815DF STPR820DF Symbol VRRM V 50 100 150 200 VRMS V 35 70 105 140 Dim. VDC V 50 100 150

Contextual Info: STPR820D/F ULTRA-FAST RECOVERY RECTIFIER DIODES MAIN PRODUCTS CHARACTERISTICS I f a v 8A V rrm 200 V Tj (max) 150°C V f (max) 0.99 V trr (max) 30 ns FEATURES • SUITED FORSMPS ■ LOW LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIME ■ HIGH SURGE CURRENT CAPABILITY

T0220AC

Contextual Info: STPR810D/F STPR820D/F Æ 7 SGS-THOMSON ULTRA FAST RECOVERY RECTIFIER DIODES FEATURES • SUITED FOR SMPS . LOW LOSSES ■ LOW FORWARD AND REVERSE RECOVERY TIME ■ HIGH SURGE CURRENT CAPABILITY . HIGH AVALANCHE ENERGY CAPABILITY K K DESCRIPTION Low cost single chip rectifier suited for switchmode

Contextual Info: STPR805DB - STPR820DB 8.0A SUPER-FAST GLASS PASSIVATED RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop

STPR805DB

Abstract: STPR820DB
Contextual Info: STPR805DB - STPR820DB VISHAY 8.0A SUPER-FAST GLASS PASSIVATED RECTIFIER LITEM ZI y POWER SEMICONDUCTOR Features Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop

ISOWATT220AC

Abstract: STPR820D STPR820F STPR820FP
Contextual Info: STPR820D/F/FP HIGH EFFICIENCY FAST RECOVERY DIODES MAIN PRODUCTS CHARACTERISTICS IF AV 8A VRRM 200 V Tj (max) 150°C VF (max) 0.99 V trr (max) 30 ns K K FEATURES Suited for SMPS Very low forward losses Negligible switching losses High surge current capability

Contextual Info: STPR805DB - STPR820DB VISHAY 8.0A SUPER-FAST GLASS PASSIVATED RECTIFIER I[l IT E M Il pow eb seh co nw icto r/ Features Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

E81734

Abstract: BYW series BYT16P-400 BYW29G-200 BYW4200B BYW51G-200 BYW77G-200 SMBYW01-200 SMBYW02-200 STPR1020CB
Contextual Info: POWER RECTIFIERS ULTRAFAST DIODES SMA SMB SMC D2PAK DPAK SURFACE MOUNT ULTRAFAST RECTIFIERS Voltage max Current 1 Amp 2 Amps 4 Amps 200 Volts 400 Volts 8 Amps 2 x 5 Amps 2 x 8 Amps 2 x 10 Amps 25 Amps 1 Amp 3 Amps 30 Amps Part Number VF (max) (*) @ rated current

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein: