STP60N05 10 Search Results

STP60N05

Abstract: STP60N05FI
Contextual Info: STP60N05 STP60N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP60N05 STP60N05FI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.02 Ω < 0.02 Ω 60 A 32 A TYPICAL RDS(on) = 0.017 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STP60N06

Abstract: STP60N05-14 STP60N06-14
Contextual Info: STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP60N05-14 STP60N06-14 • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 60 V < 0.014 Ω < 0.014 Ω 60 A 60 A TYPICAL RDS(on) = 0.012 Ω AVALANCHE RUGGED TECHNOLOGY

STP60N06

Abstract: STP60N06-16 STP60N05-16
Contextual Info: STP60N05-16 STP60N06-16 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP60N05-16 STP60N06-16 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 60 V < 0.016 Ω < 0.016 Ω 60 A 60 A TYPICAL RDS(on) = 0.013 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STP60N06-16

Abstract: STP60N06 STP60N05 STP60N05-16 4s32 LD30-A STP60N05 10 LD30A
Contextual Info: 7 ^ 2 ^ 2 3 7 D 0 4 b S 5 3 4 5 2 M S G T H SGS-THOMSON iï*^@^[I gTÎMO(gS STP60N05-16 STP60N06-16 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP60N05-16 STP60N 06-16 • . ■ ■ ■ . ■ V dss R D S (o n Id 50 V 60 V < 0.016 Q < 0.016 a

HA 1137

Abstract: STP60N05 STP60N05FI
Contextual Info: 712'1237 004fci53cî Dñ2 • S6TH SCS-THOMSON l G  L IK S ï^ M O S T P 6 0 N û S S T P 6 0 N 0 5 0 5 F I N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP60N05 STP60N05FI . ■ ■ . . . . . . V dss R dS OII Id 50 V 50 V < 0.02 Q < 0.02 £2

Contextual Info: SGS-THOMSON [MOigœilLiera *® STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP 60N 05-14 STP 60N 06-14 . . . . . . . . V dss R d S o ii Id 50 V 60 V < 0 .014 a. < 0 .014 Q. 60 A 60 A TYPICAL RDs(on) = 0.012 £1

STP60

Abstract: stp60n06
Contextual Info: SGS-THOMSON £j ï ¡mora « STP60N05-16 STP60N06- 16 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V S T P 6 0 N 0 5 -1 6 S T P 6 0 N 0 6 -1 6 dss 50 V 60 V . RDS on Id < 0 .0 1 6 Q. < 0 .0 1 6 Q. 60 A 60 A Q . . TYPICAL RDs(on) = 0.013 AVALANCHE RUGGED TECHNOLOGY

Contextual Info: 7*12^237 D04bSS3 452 M SG TH SGS-THOMSON üO T ô*S STP60N05-16 STP60N06-16 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S T P 6 0 N 0 5 -1 6 S T P 6 0 N 0 6 -1 6 • . • . ■ . . V dss R d S ( o ii Id 50 V 60 V < 0 .0 1 6 Q < 0 .0 1 6 a 60 A

ste30na50

Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20
Contextual Info: SOT-223 VDSS RDS on max (V) (Ω) 30 0.05 0.06 0.12 0.12 0.12 0.27 0.45 1.50 20.0 60 100 200 800 Type STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN3NE06L STN2N10 STN2NE10L ✠ STN1N20 STN1NB80 ✠ ID(cont) DEVICES (A) REPLACED 4.0 4.0 3.0 3.0 3.0 2.0 2.0 1.0

SSH6N80

Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
Contextual Info: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509