STP08IE120F4 Search Results

JESD97

Abstract: P08IE120F4 STP08IE120F4
Contextual Info: STP08IE120F4 Emitter Switched Bipolar Transistor ESBT 1200 V - 8 A - 0.10 Ω Preliminary Data General features VCS ON IC RCS(ON) 0.8 V 8A 0.10 W • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ very fast-switch up to 150 kHz

JESD97

Abstract: P08IE120F4 STP08IE120F4
Contextual Info: STP08IE120F4 Emitter Switched Bipolar Transistor ESBT 1200 V - 8 A - 0.10 Ω Preliminary Data General features VCS ON IC RCS(ON) 0.8 V 8A 0.10 W • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ very fast-switch up to 150 kHz

Contextual Info: STP08IE120F4 Emitter Switched Bipolar Transistor ESBT 1200 V - 8 A - 0.10 Ω Preliminary Data General features VCS ON IC RCS(ON) 0.8 V 8A 0.10 W ) s ( t c u d o ) r s ( P t c e t u e d l Internal schematic diagrams o o r Applications s P b e O t e l )

power supply schematic diagram

Abstract: 3 phase inverter schematic diagram SMPS SCHEMATIC DIAGRAM PFC smps design schematic diagram solar inverter smps Power Supply Schematic Diagram hv 1000 inverter schematic diagram 6 pin smps IC ESBT smps 450 W
Contextual Info: ESBT Emitter Switched Bipolar Transistors July 2007 www.st.com/esbt The ESBT product family Based on an emitter switching concept, the new ESBT family of high-performance power actuators provides a simple, cost-effective solution for applications requiring