ESBT Search Results

C08IE120HP

Abstract: JESD97 STC08IE120HP
Contextual Info: STC08IE120HP Emitter Switched Bipolar Transistor ESBT 1200 V - 8 A - 0.10 Ω Preliminary Data General features VCS ON IC RCS(ON) 0.8 V 8A 0.10 W • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ very fast-switch up to 150 kHz

emitter switched bipolar transistor

Abstract: C12IE90HV JESD97 STC12IE90HV
Contextual Info: STC12IE90HV Emitter Switched Bipolar Transistor ESBT 900 V - 12 A - 0.083 Ω Preliminary Data General features VCS ON IC 1V 12A RCS(ON) 0.083 • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz

C05IE150HP

Abstract: JESD97 STC05IE150HP sepic pfc
Contextual Info: STC05IE150HP Emitter Switched Bipolar Transistor ESBT 1500 V - 5 A - 0.12 Ω Features PRELIMINARY DATA VCS ON IC RCS(ON) 0.6 V 5A 0.12 W • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHZ

Contextual Info: STC03DE150 HYBRID EMITTER SWITCHING BIPOLAR TRANSISTOR ESBT  1500 V - 3 A - 0.55 Ω ADVANCE DATA • ■ ■ ■ V CS ON IC R CS(ON) 1V 1.8 A 0.55 Ω LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH UP TO 150 KHz SQUARED RBSOA UP TO 1500 V VERY LOW CISS DRIVEN BY RG = 47 Ω

JESD97

Abstract: P08IE120F4 STP08IE120F4
Contextual Info: STP08IE120F4 Emitter Switched Bipolar Transistor ESBT 1200 V - 8 A - 0.10 Ω Preliminary Data General features VCS ON IC RCS(ON) 0.8 V 8A 0.10 W • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ very fast-switch up to 150 kHz

ST 358

Abstract: isotop bipolar JESD97 STE70IE120 E70IE120
Contextual Info: STE70IE120 Monolithic Emitter Switched Bipolar Transistor ESBT 1200 V - 70 A - 0.014 Ω Power Module Target data General features VCS ON IC RCS(ON) 1V 70A 0.014W • High voltage / high current Cascode configuration ■ Ultra low equivalent on resistance

C05IE150HV

Abstract: JESD97 STC05IE150HV
Contextual Info: STC05IE150HV Emitter Switched Bipolar Transistor ESBT 1500 V - 5 A - 0.12 Ω Features PRELIMINARY DATA VCS ON IC RCS(ON) 0.6 V 5A 0.12 W • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHZ

IN4007 diode forward bias resistance

Abstract: IN4007 diode detail theory information DIODE IN4007 IN4007 working pic817 in4007 diode date sheet in4007 equivalent cv21 10k in4148 zener diode Diode IN4007 M CC
Contextual Info: AN2050 APPLICATION NOTE 3-PHASE AUXILIARY POWER SUPPLY DESIGN BASED ON EMITTER SWITCHED BIPOLAR TRANSISTORS ESBTS 1. INTRODUCTION This document presents the results of a 3-Phase auxiliary power supply designed with the UC3845 PWM driver and an ESBT, the new STC03DE170, as main switch. This work is supplemented by the release

Contextual Info: STESB01 ESBT Base Driver Features • Controls ESBT Base Current in Every Line/ Load Condition ■ Supply Voltage Range: 8V to 20 V ■ Storage Time Controlled by Closed Loop Architecture from 150ns to 1.5µs ■ SOT23-6L Under Voltage Lockout With Hysteresis

transistor EP 430

Abstract: BA157 STC03DE150 BA157 equivalent
Contextual Info: STC03DE150 HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1500 V - 3 A - 0.55 W Figure 1: Package Table 1: General Features n n n n VCS ON IC RCS(ON) 1V 1.8 A 0.55 W LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH, UP TO 150 kHz SQUARED RBSOA, UP TO 1500 V

w15b

Abstract: STW15BE120
Contextual Info: STW15BE120 High voltage fast-switching NPN power transistor Preliminary data Features . • High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed Application 3 2 ■ 1 High current ESBT drive TO-247 Description The STW15BE120 is manufactured using planar

emitter switched bipolar transistor

Contextual Info: STC12IE90HV Emitter Switched Bipolar Transistor ESBT 900 V - 12 A - 0.083 Ω Preliminary Data General features VCS ON IC 1V 12A RCS(ON) 0.083 • High voltage / high current Cascode configuration ■ Low equivalent on resistance ■ Very fast-switch up to 150 kHz

Contextual Info: STEVAL-IPB001V1 2 W, 3-phase SMPS for breaker applications based on the STC04IE170HP ESBT Data brief Features • Active startup network for improved efficiency ■ Input voltage: 150 to 1250 VDC ■ Output voltage: 24 V / 83 mA ■ Output power: 2 W ■ Switching frequency: 30 kHz

Contextual Info: STC03DE170HV Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 W Features VCS ON IC RCS(ON) 1V 3A 0.33 Ω • Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1700V ■ Very low CISS driven by RG = 47 Ω

E07DE220

Abstract: JESD97 STE07DE220 FAST-SWITCH
Contextual Info: STE07DE220 Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07 W power module Preliminary Data Features Table 1. VCS ON IC RCS(ON) 0.5V 7A 0.07 Ω • High voltage / high current cascode configuration ■ Ultra low equivalent on resistance

power supply schematic diagram

Abstract: 3 phase inverter schematic diagram SMPS SCHEMATIC DIAGRAM PFC smps design schematic diagram solar inverter smps Power Supply Schematic Diagram hv 1000 inverter schematic diagram 6 pin smps IC ESBT smps 450 W
Contextual Info: ESBT Emitter Switched Bipolar Transistors July 2007 www.st.com/esbt The ESBT product family Based on an emitter switching concept, the new ESBT family of high-performance power actuators provides a simple, cost-effective solution for applications requiring

smps with uc3845b

Abstract: AN2454 flyback smps uc3845 STEVAL-IPB001V1 UC3845 dc dc design tool uc3845 SCHEMATIC smps SRW20EF SRW20EF-E13H003 uc3845 reference smps STP03D200
Contextual Info: AN2454 Application note Universal input voltage power supply for ESBT based breaker and metering applications Introduction This document describes how to design a 3-phase power supply with the UC3845B PWM driver and the new STC04IE170 ESBT as main switch. It is associated with the release of

C03DE220HP

Abstract: JESD97 STC03DE220HP
Contextual Info: STC03DE220HP Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 W Preliminary Data Features Table 1. . Features VCS ON IC RCS(ON) 1V 3A 0.33Ω • Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Very low CISS driven by RG = 4.7 Ω

ST 4148

Abstract: 1N4007 st 8H100D welding steval STEVAL-ISA015V2 STC04IE170HV flyback inverter welding 1N4148 ST equivalent L6565 1N4007
Contextual Info: STEVAL-ISA015V2 3-phase power supply evaluation board with ESBT 100 W Data Brief Features • Input voltage: 400 VAC +/- 20% ■ Output power: 100 W ■ High efficiency (90%) ■ Switching frequency: 50-85 kHz ■ Safety compliant in accordance with EN60950

C03DE220HV

Abstract: JESD97 STC03DE220HV emitter switched bipolar transistor
Contextual Info: STC03DE220HV Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 W Features Table 1. Features VCS ON IC RCS(ON) 1V 3A 0.33Ω • Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Very low CISS driven by RG = 4.7 Ω .

STC03DE170HV

Abstract: C03DE170HV JESD97
Contextual Info: STC03DE170HV Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 W Features VCS ON IC RCS(ON) 1V 3A 0.33 Ω • Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1700V ■ Very low CISS driven by RG = 47 Ω

Contextual Info: STC03DE170 HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1700 V - 3 A - 0.55 W Figure 1: Package Table 1: General Features VCS ON IC RCS(ON) 1V 1.8 A 0.55 W ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s

r21 diode

Abstract: ESBT vrrm 400v if 20A ultra fast recovery diode #R3A
Contextual Info: APTES45DA120CT1G Boost chopper SiC FWD diode ESBT Power Module VCSS = 1200V IC = 45A @ TC = 80°C Application • DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Emitter Switched Bipolar Transistor® ESBT® - Low saturation voltage

transistor equivalents for PN2222a

Abstract: schematic SMPS 24V 24v 5a smps flyback operate in both ccm and dcm smps 5kw diode 200v 30a SMPS 150w 24v pwm smps flyback 150w emitter switched bipolar transistor
Contextual Info: STEVAL-ISA007V1 High Power 3-Phase Auxiliary Power Supply Design Based on L5991 and ESBT STC08DE150 Data Brief Features • 3-phase 150W auxiliary dual output SMPS ■ Input: 400Vac +/- 20% ■ Output voltage 1: 24V, 6.25A @ 90kHz ■ Output voltage 2: 5V, 0.075A @ 90kHz