STMICROELECTRONICS MARKING CODE DATE DIP Search Results

Contextual Info: DIP2450-01D3 2 G / 5 G WLAN diplexer Datasheet − production data Features • Low insertion loss in pass band ■ High attenuation levels ■ High rejection of out-of-band frequencies ■ Small footprint: <1.4 mm2 Benefits ■ Very low profile <600 µm after reflow

UA741I

Abstract: STMicroelectronics UA741CN equivalent
Contextual Info: UA741 General-purpose single operational amplifier Datasheet - production data N DIP8 plastic package Features • Large input voltage range • No latch-up • High gain • Short-circuit protection • No frequency compensation required D SO8 (plastic micropackage)

1N6640U01D

Contextual Info: 1N6640U Aerospace 0.3 A - 75 V switching diode Datasheet - production data Description Packaged in LCC2D this device intended for use in low voltage, high frequency inverters, free wheeling, polarity protection and other aerospace applications. K A K A Leadless chip carrier 2 LCC2D

Contextual Info: M74HC4094 8-bit SIPO shift latch register 3-state Datasheet - production data Applications • Automotive • Industrial • Computer SO16 DIP16 TSSOP16 • Consumer Description Features • High speed: fMAX = 80 MHz (typ.) at VCC = 6 V • Low power dissipation:

Contextual Info: 1N5819U Aerospace 45 V power Schottky rectifier Datasheet - production data Description K A This power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. It is housed in a surface mount hermetically sealed LCC2B

Contextual Info: 1N5811U Aerospace 6 A fast recovery rectifier Datasheet - production data Description This power ultrafast recovery rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. It is housed in a surface mount hermetically sealed LCC2B

Contextual Info: STPS6045HR Aerospace 2 x 30 A - 45 V Schottky rectifier Datasheet - production data Description This power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. Housed in a hermetically sealed surface mount package, it is

1N5806U02A

Contextual Info: 1N5806U Aerospace 2.5 A fast recovery rectifier Datasheet - production data Description A This power ultrafast recovery rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. It is housed in a surface mount hermetically sealed LCC2A

Contextual Info: 1N6642U Aerospace 0.3 A - 100 V switching diode Datasheet - production data Description This power ultrafast recovery rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. It is housed in a surface mount hermetically sealed LCC2D

1N5822U

Contextual Info: 1N5822U Aerospace 40 V power Schottky rectifier Datasheet - production data Description This power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. It is housed in a surface mount hermetically sealed LCC2B

ua741

Abstract: 5304 marking code UA741CN
Contextual Info: UA741 General-purpose single operational amplifier Features • Large input voltage range ■ No latch-up ■ High gain ■ Short-circuit protection ■ No frequency compensation required ■ Same pin configuration as the UA709 N DIP8 plastic package D SO-8

Contextual Info: BYV52HR Aerospace 30 A - 200 V fast recovery rectifier Datasheet - production data Features • Very small conduction losses • Negligible switching losses • High surge current capability • High avalanche energy capability • Hermetic package • Target radiation qualification:

STMicroelectronics smd marking code

Abstract: st smd diode marking code
Contextual Info: BYW81HR Aerospace 1 x 15 A and 2 x 15 A - 200 V fast recovery rectifier Datasheet - production data Description Packaged in hermetic TO-254 or SMD.5, this device is intended for use in medium voltage, high frequency switching mode power supplies, high frequency DC to DC converters, and other

Contextual Info: STPS40100HR Aerospace 2 x 20 A - 100 V Schottky rectifier Datasheet - production data Features • Forward current: 2 x 20 A • Repetitive peak voltage: 100 V • Low forward voltage drop: 0.9 V • Maximum junction temperature: 175 °C • Negligible switching losses

JANSR2N5401UB

Abstract: 2N5401UB06 J2N5401UB1
Contextual Info: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate

M74HC04B1

Contextual Info: M74HC04 Hex inverter Datasheet - production data Description The M74HC04 is a high-speed CMOS hex inverter manufactured using silicon gate C2MOS technology. DIP14 SO14 TSSOP14 Features The internal circuit is composed of 3 stages including a buffer output which enables high noise

st smd IC marking code

Abstract: 2N5154ESYHRT
Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 3 1 • Hi-Rel NPN bipolar transistor • Linear gain characteristics

Contextual Info: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics

Contextual Info: STRH12P10 Rad-Hard 100 V, 12 A P-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100V 12 A 265 mΩ 40 nC • Fast switching • 100% avalanche tested 1 2 • Hermetic package 3 • 100 krad TID • SEE radiation hardened TO-257AA

STM8S903

Abstract: stm8s207 stm8s105 STM8S103 stm8s105 datasheet LQFP32 footprint STM8S105C6 RLink LQFP64. footprint stm8 footprint
Contextual Info: STM8-SK/RAIS STM8-D/RAIS ST7-SK/RAIS ST7-D/RAIS Raisonance’s complete, low-cost starter kits for STM8 and ST7 Data brief Features Embedded RLink • USB interface to host PC ■ In-circuit debugging and programming ■ Application board connection via ST SWIM,

STRH12P10GYG

Contextual Info: STRH12P10 Rad-Hard 100 V, 12 A P-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100V 12 A 265 mΩ 40 nC • Fast switching • 100% avalanche tested • Hermetic package • 100 krad TID • SEE radiation hardened TO-257AA Applications

Contextual Info: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics

STMicroelectronics smd marking code

Abstract: st smd diode marking code
Contextual Info: STPS20100HR Aerospace 1 x 20 and 2 x 20 A - 100 V Schottky rectifier Datasheet - production data • High reverse avalanche surge capability • Hermetic packages • Target radiation qualification: – 150 krad Si low dose rate – 1 Mrad high dose rate

marking code RAD SMD Transistor npn

Abstract: JS55
Contextual Info: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate