OCT14 Search Results

ic power 22E

Abstract: 3904U power 22E IC 1N916
Contextual Info: SMBT 3904U NPN Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA 5 4 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 3 2 • Complementary type: SMBT 3906U (PNP)

SCT-595

Abstract: VPW05980
Contextual Info: SMBTA 06M NPN Silicon AF Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 56M PNP 3 2 1 VPW05980 Type Marking SMBTA 06M s1G Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT-595 Maximum Ratings

MARKING 93

Abstract: VPS05163 3CTA
Contextual Info: PZTA 92 PNP Silicon High Voltage Transistor
High breakdown voltage 4
Low collector-emitter saturation voltage
Complementary type: PZTA 42 NPN 3 2 1 Type Marking PZTA 92 PZTA 92 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT-223 Maximum Ratings

NPN S2D

Contextual Info: SMBTA 92 PNP Silicon High Voltage Transistor 3 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42 NPN 2 1 Type Marking SMBTA 92 s2D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings

Contextual Info: SMBTA 13, SMBTA 14 NPN Silicon Darlington Transistors 3
High DC current gain
High collector current
Low collector-emitter saturation voltage 2 1 Type Marking Pin Configuration SMBTA 13 s1M 1=B 2=E 3=C SOT-23 SMBTA 14 s1N 1=B 2=E 3=C SOT-23 VPS05161 Package

smbt5086

Contextual Info: SMBT 5087 PNP Silicon Transistor 3
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz 2 1 Type Marking SMBT 5087 s2Q Pin Configuration 1=B 2=E VPS05161 Package 3=C

NC7010

Contextual Info: BSM 10 GD 120 DN2 E3224 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VCE BSM 10 GD 120 DN2 BSM 10 GD120DN2E3224 IC Package Ordering Code 1200V 15A ECONOPACK 2

3904

Abstract: "marking s1a" sot-23 transistor 3904 1N916 3906 PNP transistor 3906 3904 TRANSISTOR npn h12e 3904 SOT23
Contextual Info: SMBT 3904 NPN Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3906 PNP 2 1 Type Marking SMBT 3904 s1A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23

Contextual Info: SMBTA 56 PNP Silicon AF Transistor 3 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 06 NPN 2 1 Type Marking SMBTA 56 s2G Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings Parameter

VPS05163

Abstract: 43 SOT223 MARKING
Contextual Info: PZTA 42, PZTA 43 NPN Silicon High-Voltage Transistors • High breakdown voltage 4 • Low collector-emitter saturation voltage • Complementary types; PZTA 92, PZTA 93 PNP 3 2 1 Pin Configuration VPS05163 Type Marking Package PZTA 42 PZTA 42 1=B 2=C 3=E

TRANSISTOR S1d

Abstract: SCT-595
Contextual Info: SMBTA 42M NPN Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 92M PNP 3 2 1 VPW05980 Type Marking SMBTA 42M s1D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT-595

h11e

Abstract: SMBT3904UPN
Contextual Info: SMBT 3904U PN NPN/PNP Silicon Switching Transistor Array
High current gain 4 5 6
Low collector-emitter saturation voltage
Two galvanic internal isolated NPN/PNP Transistors in one package 3 2 1 VPW09197 C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07177

TRANSISTOR S1d

Abstract: s1D marking, datasheet sot-23
Contextual Info: SMBTA 42 NPN Silicon Transistor for High Voltages 3 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 92 PNP 2 1 Type Marking SMBTA 42 s1D Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings

ic power 22E

Abstract: 3904S SMBT 3904S 1N916 VPS05604
Contextual Info: SMBT 3904S NPN Silicon Switching Transistor Array 4
High DC current gain: 0.1mA to 100mA 5 6
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package
Complementary type: SMBT 3906S (PNP)

MARKING S1G

Contextual Info: SMBTA 06 NPN Silicon AF Transistor 3 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 56 PNP 2 1 Type Marking SMBTA 06 s1G Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings Parameter

EHP00364

Contextual Info: SMBTA 63, SMBTA 64 PNP Silicon Darlington Transistors 3 • High collector current • High DC current gain 2 1 Type Marking Pin Configuration SMBTA 63 s2U 1=B 2=E 3=C SOT-23 SMBTA 64 s2V 1=B 2=E 3=C SOT-23 VPS05161 Package Maximum Ratings Parameter Symbol

VPW05980

Contextual Info: SMBTA 56M PNP Silicon AF Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 06M NPN 3 2 1 VPW05980 Type Marking SMBTA 56M s2G Pin Configuration 1=B 2=C 3=E Package 4 n.c. 5 = C SCT-595 Maximum Ratings

V23990-k438

Contextual Info: Power Modules New MiniSKiiP Modules with Mitsubishi’s Latest IGBT 6.1 Product name ® MiniSKiiP PIM 3 16 x 82 x 59 mm Vincotech has extended its range of MiniSKiiP® PIM 3 and MiniSKiiP® PACK 3 power modules featuring Mitsubishi IGBT 6.1 versions covering

ic power 22E

Abstract: 1N916
Contextual Info: SMBT 3906U PNP Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA 5 4 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 3 2 • Complementary type: SMBT 3904U (NPN)

transistor 2222a

Abstract: transistor 2222a CURRENT GAIN 2222A transistor 2222a 2907a TRANSISTOR PNP
Contextual Info: SMBT 2222A NPN Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP 2 1 Type Marking SMBT 2222A s1B Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23

3906

Abstract: transistor 3906 k0300 H12E 1N916 EHP00772 3906 pnp ic power 22E
Contextual Info: SMBT 3906 PNP Silicon Switching Transistor 3
High DC current gain: 0.1mA to 100mA
Low collector-emitter saturation voltage
Complementary type: SMBT 3904 NPN 2 1 Type Marking SMBT 3906 s2A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings

Contextual Info: SMBD 7000 Silicon Switching Diode Array 3 • For high-speed switching applications • Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking SMBD 7000 s5C Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage

DIODE 914

Abstract: 914 DIODE
Contextual Info: SMBD 914 Silicon Switching Diode 3 • For high-speed switching applications 2 1 VPS05161 1 3 EHA07002 Type Marking SMBD 914 s5D Pin Configuration 1=A 2 n.c. Package 3=C SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage

P07D03LV

Abstract: NIKO-SEM
Contextual Info: P07D03LV Dual N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM SOP-8 PRODUCT SUMMARY V BR DSS RDS(ON) ID 30 20mΩ 7A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS