STGW Search Results

Contextual Info: STGFW80V60F, STGW80V60F, STGWT80V60F Trench gate field-stop IGBT, V series 600 V, 80 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 • Tail-less switching off • VCE sat = 1.85 V (typ.) @ IC = 80 A

STGW12NB60H

Contextual Info: STGW12NB60H N-CHANNEL 12A - 600V − TO-247 PowerMESH IGBT TYPE STGW12NB60H • ■ ■ ■ ■ ■ ■ ■ ■ VCES VCE sat IC 600 V < 2.8 V 12 A HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY

GW40NC60KD

Contextual Info: STGW40NC60KD 600 V, 40 A short-circuit rugged IGBT Datasheet - production data Features • Low on-voltage drop VCE(sat • Low Cres / Cies ratio (no cross conduction susceptibility) • Short-circuit withstand time 10 µs 2 • IGBT co-packaged with ultra fast free-wheeling

GW45HF60WD

Abstract: STGW45HF60WD gw45hf60 ST IGBT code marking
Contextual Info: STGW45HF60WD 45 A, 600 V ultra fast IGBT Preliminary data Features • Improved Eoff at elevated temperature ■ Low CRES / CIES ratio no cross-conduction susceptibility ■ Ultra fast soft recovery antiparallel diode Applications 2 3 1 ■ Welding ■ High frequency converters

Contextual Info: STGW40H65DFB STGWT40H65DFB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 1 2 1 TO-247 • Very low saturation voltage: VCE sat = 1.60 V

Contextual Info: STGW28IH125DF STGWT28IH125DF 1250 V, 30 A IH series trench gate field-stop IGBT Datasheet - production data Features • Designed for soft commutation only TAB • Maximum junction temperature: TJ = 175 °C • Minimized tail current 2 • VCE sat = 2.0 V (typ.) @ IC = 25 A

STGW40NC60V

Contextual Info: STGW40NC60V N-CHANNEL 40A - 600V TO-247 Hyper Fast PowerMESH IGBT PRELIMINARY DATA TYPE STGW40NC60V • ■ ■ ■ ■ ■ VCES VCE sat IC 600 V < 2.5 V 40 A HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE

Contextual Info: STGW40H120DF2 1200 V, 40 A high speed trench gate field-stop IGBT Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE sat = 2.1 V (typ.) @ IC = 40 A • 5 s minimum short circuit withstand time at

Contextual Info: STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features TAB TAB • Maximum junction temperature: TJ = 175 °C • Tail-less switching off 3 3 1 1 D²PAK TO-220

GW20NC60

Contextual Info: STGW20NC60VD N-CHANNEL 30A - 600V TO-247 Hyper Fast PowerMESH IGBT TARGET DATA TYPE STGW20NC60VD • ■ ■ ■ ■ VCES VCE sat (Max) @25°C IC (#) @100°C 600 V < 2.5 V 30 A HIGH INPUT IMPEDANCE OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY

Contextual Info: STGFW20V60F, STGW20V60F, STGWT20V60F 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • Very high speed switching series 1 • Tail-less switching off 3 2 • Low saturation voltage: VCE sat = 1.8 V (typ.)

GW40V60DF

Contextual Info: STGW40V60DF STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off • VCE sat = 1.8 V (typ.) @ IC = 40 A 2 • Tight parameters distribution

Contextual Info: STGY80H65DFB, STGW80H65DFB, STGWT80H65DFB Trench gate field-stop IGBT, HB series 650 V, 80 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series 1 Max247 2 • Minimized tail current

Contextual Info: STGW40N120KD 40 A - 1200 V - short circuit rugged IGBT Preliminary Data Features • Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with ultra fast free-wheeling diode 2 3 1 Application

20NB60H

Contextual Info: STGW20NB60H  N-CHANNEL 20A - 600V - TO-247 PowerMESH IGBT T YPE STGW 20NB60H • ■ ■ ■ ■ ■ V CES V CE sat IC 600 V < 2.8 V 20 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION

GW20NB60K

Abstract: GW20NB60 gp20nb60 STGP20NB60K STGW20NB60K
Contextual Info: STGP20NB60K STGW20NB60K N-CHANNEL 20A - 600V - TO-220/TO-247 SHORT CIRCUIT PROOF PowerMESH IGBT TYPE STGP20NB60K STGW20NB60K • ■ ■ ■ ■ ■ ■ ■ ■ VCES VCE sat IC 600 V 600 V < 2.8 V < 2.8 V 20 A 20 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)

GW40N120

Abstract: GW40N120KD STGW40N120 STGW40N120KD GWA40N120KD STGWA40N120KD
Contextual Info: STGW40N120KD STGWA40N120KD 40 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features • Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with Ultrafast free-wheeling diode

STGW40NC60WD

Abstract: icl 298 HF IGBT GW40NC60WD ic MARKING QG JESD97
Contextual Info: STGW40NC60WD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT General features Type VCES STGW40NC60WD 600V IC VCE sat (Max)@ 25°C @100°C <2.5V 40A • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation

GW35HF60W

Abstract: STGW35HF60W STGF35HF60W gf35hf60w C5000 IC200 gf35
Contextual Info: STGF35HF60W STGW35HF60W 35 A, 600 V Ultrafast IGBT Features • Improved Eoff at elevated temperature ■ Minimal tail current ■ Low conduction losses Applications 2 3 3 1 ■ Welding ■ High frequency converters ■ Power factor correction TO-247 1 2 TO-220FP

Contextual Info: STGW80H65DFB STGWT80H65DFB 650 V, 80 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V

Contextual Info: STGW60V60F Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE sat = 1.85 V (typ.) @ IC = 60 A • Tight parameters distribution

Contextual Info: STGW40H65FB STGWT40H65FB 650 V, 40 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 2 1 1 TO-247 • Very low saturation voltage: VCE sat = 1.6 V

GW60H65DFB

Contextual Info: STGW60H65DFB STGWT60H65DFB 650 V, 60 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 • Very low saturation voltage: VCE sat = 1.6 V

Contextual Info: STGP30NC60W STGW30NC60W N-channel 30A - 600V - TO-247 - TO-220 Ultra fast switching PowerMESH IGBT Features Type VCES VCE sat Max @25°C IC @100°C STGW30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A 3 • High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction