STD883C Search Results

IMS1420M

Abstract: IMS1420S-55M IMS1420S-70M IMS1420S55M IMS1420N-55M IMS1420N-70M
Contextual Info: IMS1420M High Performance 4Kx4 Static RAM MIL-STD-883C lín m o s DESCRIPTION FEATURES The INMOS IMS1420M is a high performance 4Kx4 Static RAM processed in full compliance to MIL-STD883C with access times of 55ns and 70ns and a maximum power consumption of 660mW. These characteristics are

4kx4 ram

Abstract: IMS1420M
Contextual Info: . IMS1420M •■■■■■SS "SSSSSS" ■■■■ m m o High Performance 4Kx4 Static RAM M IL-S TD -883C s " FEATURES DESCRIPTION The INMOS IMS1420M is a high performance 4Kx4 Static RAM processed in full compliance to MIL-STD883C with access times of 55ns and 70ns and a maximum

Contextual Info: P R t C I S I O N T H I N F I L M T E C H C u sto m R e s is to r A rrays, U ser Trim N O L O G Y T h in F ilm UT Series F eatures • Final resistor tolerance and stability is a function of end user trim capabilities • Visual inspection per MIL-STD883C method 2032 for Class B

A1t smd

Abstract: IMS1203M sei smd resistors IMS1203A-25M IMS1203M-2S IMS1203M-35 IMS1203M-45 IMS1203S-25M IMS1203S-35M ceramic pin grid array package lead finish gold
Contextual Info: IMS1203M CMOS High Performance 4K x 1 Static RAM MIL-STD-883C ÏTüTIOS* D ESCR IPTIO N FE A TU R ES The IN M O S IM S 1203M is a high speed C M O S 4Kx1 static RAM processed in full compliance to MIL-STD883C . The IM S1203M provides performance enhance­

Contextual Info: IMS1420M High Performance 4Kx4 Static RAM MIL-STD-883C imos FEATURES DESCRIPTION The INMOS IMS1420M is a high performance 4Kx4 Static RAM processed in full compliance to MIL-STD883C with access times of 55ns and 70ns and a maximum power consumption of 660mW. These characteristics are

Contextual Info: IMS1223M CMOS High Performance 1K x 4 Static RAM MIL-STD-883C M HO S’ DESCRIPTION FEATURES The INMOS IMS1223M is a high speed CMOS 1Kx4 static RAM processed in full compliance to MIL-STD883C. The IMS1223M provides performance enhance­ ments with the additional CMOS benefits of lower power

Contextual Info: HARRIS H S P 43881/883 Digital Filter June 1 9 9 0 Features • D escription This Circuit is Processed in Accordance to M il-Std883C and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • 0 to 25.6MHz Sample Rate • Eight Filter Cells • 8

Contextual Info: HARRIS H S P 4388 1 /8 8 3 Digital Filter Features Description • This Circuit is Processed in Accordance to M il-Std883C and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HSP43881/883 is a video speed Digital Filter DF designed to efficiently implement vector operations such as

IMS1223A-25M

Abstract: IMS1223M IMS1223S-25M
Contextual Info: I IMS1223M CMOS High Performance 1K x 4 Static RAM MIL-STD-883C DESCRIPTION FEATURES The INMOS IMS1223M is a high speed CMOS 1Kx4 static RAM processed in full compliance to MIL-STD883C. The IMS1223M provides performance enhance­ ments with the additional CMOS benefits of lower power

4kx1 static ram

Abstract: MS1203 IMS1203A-25M IMS1203M IMS1203M-25 IMS1203M-2S IMS1203M-35 IMS1203M-45 1203M
Contextual Info: IM S 1 2 0 3 M CMOS High Performance 4K x 1 Static RAM MIL-STD-883C DESCRIPTION FEATURES The INMOS IMS1203M is a high speed CMOS 4Kx1 static RAM processed in full compliance to MIL-STD883C. The IMS1203M provides performance enhance­ ments with the additional CMOS benefits of lower power

ttl 7493

Abstract: IMS1400N-45M
Contextual Info: IMS1400M • High Performance 16K Static RAM MIL-STD-883C i m os DESCRIPTION FEATURES The INMOSIMS1400M is a high performance 16Kx1 Static RAM processed in full compliance to MIL-STD883C with access times as fast as45nsecanda maximu m power consumption of 660mW, These characteristics are

Contextual Info: 54AC11109, 74AC11109 DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET TI0066— D2957, M ARCH 1987— REVISED M ARCH 1990 Flow-Through Architecture to Optimize PCB Layout 54AC11109 . . . J PACKAGE 74AC11109 . . . D OR N PACKAGE TOP VIEW

TLC27M4IN

Abstract: tlc27m4cn
Contextual Info: TLC27M4, TLC27M4A, TLC27M4B, TLC27M4Y, TLC27M9 LinCMOS PRECISION QUAD OPERATIONAL AMPLIFIERS SLOS093C – OCTOBER 1987 – REVISED MAY 1999 D D D D D D D D D D 1OUT 1IN – 1IN + VDD 2IN + 2IN – 2OUT 1 14 2 13 3 12 4 11 5 10 6 9 7 8 4OUT 4IN – 4IN +

TLC27M2MFK

Contextual Info: TLC27M2, TLC27M2A, TLC27M2B, TLC27M7 LinCMOS PRECISION DUAL OPERATIONAL AMPLIFIERS SLOS051C – OCTOBER 1987 – REVISED MAY 1999 D D D D D Trimmed Offset Voltage: TLC27M7 . . . 500 µV Max at 25°C, VDD = 5 V Input Offset Voltage Drift . . . Typically

TSI180B1

Abstract: TSI200B1 TSI220B1 TSI265B1 TSI62B1 ST Microelectronics SO8 Marking information ST Microelectronics SO8 Marking TSIxxB1
Contextual Info: TSIxxB1 Application Specific Discretes A.S.D. TERMINAL SET INTERFACE PROTECTION AND DIODE BRIDGE MAIN APPLICATION • ■ ■ ■ ■ ■ Telecom equipment requiring combined protection against transient overvoltages and rectification by diode bridge :

Contextual Info: BALF-SPI-01D3 50 ohm / conjugate matched to Spirit1 / 868 MHz and 915 MHz balun transformer and integrated filtering Datasheet − production data Features • 50 Ω nominal input / conjugate match to Spirit1 • Low insertion loss • Low amplitude imbalance

Contextual Info: hmp 128K x 8 SRAM MSM8129 - 020/025/35 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0191 2930500 Fax. +44 (0191) 2590997 Issue 3 : September 2002 Description 128K x 8 CMOS Fast Static RAM The MSM8129 is a 1Mbit monolithic SRAM organised

Contextual Info: □PM Dense-Pac Microsystems, Inc. DPS41288 1 28 K X 8 C M O S S R A M M O D U L E O DESCRIPTION: The DPS41288 is a one m egabit Static Random Access M em o ry SRAM , com p le te w ith m em ory interface logic and on-board capacitor, organized as 128K X 8

PJSOT05CFN3

Contextual Info: PJSOT05CFN3 E.S.D. Dual Protection Diode Array This Dual Unidirectional ESD Protector Array family have been designed to protect sensitive equipment against ESD in high speed transmission buses, operating at 5V. This dual array offers an integrated solution to protect up

Contextual Info: HDMIULC6-4SC6Y Automotive ultralarge bandwidth ESD protection Datasheet  production data Features • 4-line 15 kV ESD protection ■ Protects VBUS when applicable ■ Ultrahigh bandwidth - no influence on signal rise and fall times - maximized number of signal

CW1260

Abstract: CW1250
Contextual Info: BAL-CW1250D3 Balun transformer with integrate matching Datasheet  production data Description STMicroelectronics BAL-CW1250D3 is a balun balanced/unbalanced device designed to transform a single ended signal to differential signals in WLAN application.This

USBLC6-2SC6

Abstract: UL26 USBLC6-2P6 st microelectronics reliability USBLC6-2SC6 SMP75-8
Contextual Info: USBLC6-2 ASD Application Specific Devices VERY LOW CAPACITANCE ESD PROTECTION MAIN APPLICATIONS • USB2.0 ports at 480Mbps (high speed) and USB OTG ports ■ Backwards Compatible with USB1.1 Low and full speed ■ Ethernet port: 10/100Mb/s ■ SIM card protection

CI 817a

Contextual Info: ADV601 Preliminary Data Sheet January 1996 For current information contact Analog Devices at 617 461-3881 APPLICATIONS FEATURES • • • • • • Precise Compressed Bit Rate Control • Field Independent Compression • Flexible Video Interface Supports All

TP10N

Contextual Info: £ 7 7 SGS-THOMSON k7#s. BD glSÌ(S ilLI(@T^ liD(ei Application Specific Discretes a q 25 n TSIxxBI TER M IN AL SET INTERFACE PROTECTION AND DIODE BRIDGE MAIN APPLICATION Telecom equipment requiring combined protection against transient overvoltages and