STD5N Search Results

D5NM60

Abstract: p8nm60fp p8n*m60fp STD5NM60T4 STP8NM60FP P8NM60 STD5NM60 STD5NM60-1 STP8NM60
Contextual Info: STP8NM60, STP8NM60FP STD5NM60, STD5NM60-1 N-CHANNEL 600V - 0.9Ω - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh Power MOSFET TYPE STP8NM60 STP8NM60FP STD5NM60 STD5NM60-1 • ■ ■ ■ ■ VDSS 600 V 600 V 600 V 600 V RDS on < < < < 1Ω 1Ω 1Ω 1Ω ID Pw

STD5NE10

Contextual Info: STD5NE10 N - CHANNEL 100V - 0.32 Ω - 5A TO-251/TO-252 STripFET POWER MOSFET TYPE STD5NE10 • ■ ■ ■ ■ ■ VDSS R DS on ID 100 V < 0.4 Ω 5A TYPICAL RDS(on) = 0.32 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE TESTED 100% AVALANCHE TESTED APPLICATION ORIENTED

STD5NE10L

Contextual Info: STD5NE10L  N - CHANNEL 100V - 0.3 Ω - 5A - DPAK/IPAK STripFET POWER MOSFET PRELIMINARY DATA TYPE STD5NE10L • ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.4 Ω 5 A TYPICAL RDS(on) = 0.3 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY

inverter schematic

Abstract: PMSM stm32 L6390 STM32 STD5NK52ZD-1 STM3210B-EVAL Power INVERTER schematic circuit 3 phase inverter 3phase MOSFET INVERTER
Contextual Info: STEVAL-IHM021V1 100 W 3-phase inverter for speed FOC of 3-phase PMSM motor drive based on the L6390 and STD5NK52ZD-1 Data Brief Features • Input voltage wide range 110 Vac and 230 Vac ■ Maximum power-up to 100 W at 230 Vac input voltage ■ Power MOSFET STD5NK52ZD-1(4.4 A 520 V)

STD5NB30

Contextual Info: STD5NB30  N - CHANNEL 300V - 0.75 Ω - 5A - DPAK PowerMESH MOSFET TYPE ST D5NB30 • ■ ■ ■ ■ ■ V DSS R DS on ID 300 V < 0.9 Ω 5 A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

5N60M

Contextual Info: STD5N60M2, STP5N60M2, STU5N60M2 N-channel 600 V, 1.26 Ω typ., 3.7 A MDmesh II Plus low Qg Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - preliminary data Features TAB Order codes 3 1 VDS @ TJmax RDS on max ID 650 V 1.4 Ω 3.7 A STD5N60M2

Contextual Info: STD5NM50 N-CHANNEL 500V - 0.7Ω - 5A DPAK/IPAK MDmesh Power MOSFET • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD5NM50 500V <0.8Ω 5A TYPICAL RDS(on) = 0.7Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE

Contextual Info: STD5NM50 N-CHANNEL 500V - 0.7Ω - 5A DPAK MDmesh Power MOSFET • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD5NM50 500V <0.8Ω 5A TYPICAL RDS(on) = 0.7Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE

STD5N20

Contextual Info: STD5N20 N - CHANNEL 200V - 0.7CI - 5A - TO-251/TO-252 POWER MOS TRANSISTOR TYPE STD5N 20 V dss 200 V R d S o Id ii < 0.8 Q. 5 A • . . . . . . . TYPICAL RDS(on) = 0.7 £1 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

STD5NB30

Contextual Info: STD5NB30 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STD5NB30 300 V < 0.9 Ω 5A • ■ ■ ■ ■ ■ TYPICAL RDS(on) =0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

STD5N20

Contextual Info: STD5N20 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD5N20 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 200 V < 0.7 Ω 5A TYPICAL RDS(on) = 0.55 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED

p8nm60fp

Abstract: B8NM60 D5NM60 STD5NM60-1 STB8NM60 STB8NM60T4 STD5NM60 STD5NM60T4 STP8NM60 STP8NM60FP
Contextual Info: STD5NM60 - STD5NM60-1 STB8NM60 - STP8NM60 - STP8NM60FP N-CHANNEL 650V@Tjmax - 0.9Ω - 8A - TO-220 /FP- D2/D/IPAK MDmesh Power MOSFET General features Type VDSS RDS on ID Pw STD5NM60 650V <1Ω 5A 96W 1 STD5NM60-1 650V <1Ω 5A 96W DPAK STB8NM60 650V <1Ω

Contextual Info: STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 5A DPAK/IPAK MDmesh Power MOSFET • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD5NM50 500V <0.8Ω 5A TYPICAL RDS(on) = 0.7Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE

P5NK52

Abstract: D5NK5 p5nk52zd STP5NK52ZD STD5NK52ZD-1 B5NK52ZD p5nk52Z
Contextual Info: STP5NK52ZD - STB5NK52ZD-1 STD5NK52ZD - STD5NK52ZD-1 N-CHANNEL 520V - 1.22Ω - 4.4A TO-220-DPAK-IPAK-I2PAK SuperFREDMesh MOSFET TARGET SPECIFICATION Table 1: General Features TYPE STB5NK52ZD-1 STD5NK52ZD STD5NK52ZD-1 STP5NK52ZD • ■ ■ ■ ■ ■ ■

p5nk60zfp

Abstract: D5NK6 P5NK60 STP5NK60ZFP p5nk60zf P5NK60Z A0 DIODE ZENER diode 400V 5A STD5NK60ZT4 STD5NK60Z
Contextual Info: STP5NK60Z - STP5NK60ZFP STD5NK60Z N-CHANNEL 600V - 1.2Ω 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH Power MOSFET TYPE STP5NK60Z STP5NK60ZFP STD5NK60Z • ■ ■ ■ ■ ■ VDSS R DS on ID Pw 600 V 600 V 600 V < 1.6 Ω < 1.6 Ω < 1.6 Ω 5A

Contextual Info: STD5NM60 STD5NM60-1 N-CHANNEL 600V - 0.9Ω - 5A DPAK/IPAK MDmesh Power MOSFET PRELIMINARY DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD5NM60 600V < 1Ω 5A TYPICAL RDS(on) = 0.9Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE

Contextual Info: STD5NM60 STD5NM60-1 N-CHANNEL 600V - 0.9Ω - 5A DPAK/IPAK MDmesh Power MOSFET PRELIMINARY DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD5NM60 600V < 1Ω 5A TYPICAL RDS(on) = 0.9Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE

d5n20

Abstract: STD5N20L STD5N20LT4 D5N20L
Contextual Info: STD5N20L N-CHANNEL 200V - 0.65Ω - 5A DPAK STripFET MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STD5N20L 200 V < 0.7 Ω 5A 33 W • ■ ■ ■ TYPICAL RDS(on) = 0.65 Ω @ 5V CONDUCTION LOSSES REDUCED LOW INPUT CAPACIATNCE

STD5N20

Contextual Info: STD5N20 N-CHANNEL 200V - 0.6Ω - 5A DPAK MESH OVERLAY MOSFET TYPE STD5N20 • ■ ■ ■ VDSS RDS on ID 200 V < 0.8 Ω 5A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED ADD SUFFIX “T4” FOR OREDERING IN TAPE & REEL

STP5NK40Z

Contextual Info: STP5NK40Z - STP5NK40ZFP STD5NK40Z - STD5NK40Z-1 N-CHANNEL 400V - 1.47Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE STP5NK40Z STP5NK40ZFP STD5NK40Z STD5NK40Z-1 • ■ ■ ■ ■ ■ VDSS RDS on 400 400 400 400 < 1.8 < 1.8

STD5NM60

Abstract: diode C2
Contextual Info: STD5NM60 N-CHANNEL 600V - 0.8Ω - 5A DPAK MDmesh Power MOSFET PRELIMINARY DATA • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD5NM60 600V <0.9Ω 5A TYPICAL RDS(on) = 0.8Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE

STD5NM50

Contextual Info: STD5NM50 N-CHANNEL 500V - 0.7Ω - 5A DPAK MDmesh Power MOSFET • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STD5NM50 500V <0.8Ω 5A TYPICAL RDS(on) = 0.7Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE

p5nk60zfp

Abstract: STD5NK60Z P5NK60 P5NK60Z STP5NK60ZFP p5nk60zf D5NK6 STD5NK60ZT4 STP5NK60Z D5NK60
Contextual Info: STD5NK60Z STP5NK60Z - STP5NK60ZFP N-CHANNEL 650V @Tjmax - 1.2Ω - 5A TO-220/FP/DPAK Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS@ TJmax RDS on Id PTOT STP5NK60Z STP5NK60ZFP STD5NK60Z 650 V 650 V 650 V < 1.6 Ω

STD5NB20

Contextual Info: STD5NB20  N - CHANNEL 200V - 0.70Ω - 5A DPAK PowerMESH MOSFET PRELIMINARY DATA TYPE ST D5NB20 • ■ ■ ■ ■ ■ V DSS R DS on ID 200 V < 0.8 Ω 5 A TYPICAL RDS(on) =0.7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES