STD3N25 Search Results
STD3N25 Equivalents
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STD3N25 Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| STD3N25 |
|
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN | Original | 174.49KB | 10 | ||
| STD3N25 |
|
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN | Original | 363.65KB | 10 | ||
| STD3N25-1 |
|
N-Channel Enhancement Mode Power MOS Transistor | Original | 363.65KB | 10 | ||
| STD3N25T4 |
|
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | Original | 174.48KB | 10 | ||
| STD3N25T4 |
|
N-Channel Enhancement Mode Power MOS Transistor | Original | 363.65KB | 10 |
STD3N25 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
3l4 diodeContextual Info: r Z ^ 7 Z S G S - T H O M S O N # M G IF ä < m [i< m @ R !]D S S T D 3 N 2 5 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V d ss R d S o ii 250 V STD3N25 Id <2 0. 3 A • . . . . TYPICAL R ds(oii) = 1 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED |
OCR Scan |
STD3N25 O-251) O-252) O-251 O-252 0068772-B 3l4 diode | |
STD3N25Contextual Info: STD3N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD3N25 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 250 V <2Ω 3A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED |
Original |
STD3N25 100oC O-251) O-252) STD3N25 | |
schematic diagram Electronic Ballast 236
Abstract: STD3N25
|
Original |
STD3N25 100oC O-251) O-252) schematic diagram Electronic Ballast 236 STD3N25 |