STB80N Search Results

B80NE03L

Abstract: JESD97 STB80NE03L-06 b80ne
Contextual Info: STB80NE03L-06 N-channel 30V - 0.005Ω - 85A - D2PAK STripFET Power MOSFET General features Type VDSS RDS on ID STB80NE03L-06 30V <0.006Ω 80A • Exceptional dv/dt capability ■ Low gate charge 100°C ■ 100% Avalanche tested 3 1 D2PAK Description

B80NE06

Abstract: B80NE06-10 b80ne
Contextual Info: STB80NE06-10 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE ST B80NE06-10 • ■ ■ ■ ■ V DSS R DS on ID 60 V <0.01 Ω 80 A TYPICAL RDS(on) = 0.0085 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED

STB80NF55-08

Abstract: 0053D
Contextual Info: STB80NF55-08 N-CHANNEL 55V - 0.0065Ω - 80A D2PAK/I2PAK STripFET POWER MOSFET TYPE STB80NF55-08 • ■ ■ ■ VDSS RDS on ID 55 V <0.008 Ω 80 A TYPICAL RDS(on) = 0.0065 Ω LOW THRESHOLD DRIVE THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX “-1”)

Contextual Info: STB80NF55L-06 N - CHANNEL 5 5 V - 0.005 Î2 -8 0 A D2PAK STripFET POWER MOSFET TYPE S T B 8 0 N F 5 5 L -0 6 • . . . V dss 55 V R d S o ii Id < 0 .0 0 6 5 Q. 80 A TYPICAL RDS(on) = 0.005 LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE ADD SUFFIX ”T4” FOR ORDERING IN TAPE

STB80NF55-06

Contextual Info: STB80NF55-06  N - CHANNEL 55V - 0.005Ω - 80A TO-262/TO-263 STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STB80NF55-06 55 V < 0.0065 Ω 80 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.005 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED

STB80NF55-06

Contextual Info: STB80NF55-06 N-CHANNEL 55V - 0.005Ω - 80A D2PAK STripFET POWER MOSFET TYPE STB80NF55-06 • ■ ■ ■ ■ VDSS RDS on ID 55 V <0.0065Ω 80 A TYPICAL RDS(on) = 0.005Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION

80nf

Abstract: STP80NF55-06 STB80NF55-06-1 STP80NF55-06FP
Contextual Info: STP80NF55-06 - STP80NF55-06FP STB80NF55-06-1 N-CHANNEL 55V - 0.005Ω - 80A TO-220/TO-220FP/I2PAK STripFET POWER MOSFET TYPE • ■ ■ ■ ■ VDSS R DS on ID STP80NF55-06/-1 55 V <0.0065Ω 80 A STP80NF55-06FP 55 V <0.0065Ω 60 A TYPICAL RDS(on) = 0.005Ω

p80nf06

Abstract: B80NF06 max 550 transistor W80NF06 P80NF p80n
Contextual Info: STP80NF06 - STB80NF06 STW80NF06 N-CHANNEL 60V - 0.0065Ω - 80A TO-220/D2PAK/TO-247 STripFET II POWER MOSFET TYPE STB80NF06 STP80NF06 STW80NF06 • ■ ■ ■ VDSS RDS on ID 60 V 60 V 60 V < 0.010 Ω < 0.010 Ω < 0.010 Ω 80 A 80 A 80 A TYPICAL RDS(on) = 0.0065Ω

p80nf10

Abstract: b80nf10 P80NF-10
Contextual Info: STP80NF10 STB80NF10 N-CHANNEL 100V - 0.012Ω - 80A - TO-220/D2PAK LOW GATE CHARGE STripFET II MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID STB80NF10 STP80NF10 100 V 100 V < 0.015 Ω < 0.015 Ω 80 A 80 A • ■ ■ ■ TYPICAL RDS(on) = 0.012Ω

P80NF10

Abstract: P80NF b80nf1 b80nf10 P80NF-10
Contextual Info: STB80NF10 STP80NF10 N-channel 100V - 0.012Ω - 80A - TO-220 / D2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID(1) STP80NF10 100V <0.015Ω 80A STB80NF10 100V <0.015Ω 80A • Exceptional dv/dt capability ■ 100% Avalanche tested

80NF03

Abstract: 80NF03L 80nf03l-04 STP80NF03L-04
Contextual Info: STP80NF03L-04 STB80NF03L-04 STB80NF03L-04-1 N-CHANNEL 30V - 0.0035 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE STB80NF03L-04/-1 STP80NF03L-04 • ■ ■ ■ VDSS R DS on ID 30 V 30 V <0.004 Ω <0.004 Ω 80 A 80 A TYPICAL RDS(on) = 0.0035Ω

STP80NF03L-04

Contextual Info: STB80NF03L-04-1 STP80NF03L-04 N-CHANNEL 30V - 0.0035Ω - 80A I2PAK/TO-220 STripFET POWER MOSFET • ■ ■ ■ TYPE VDSS R DS on ID STB80NF03L-04-1 STP80NF03L-04 30 V 30 V <0.004 Ω <0.004 Ω 80 A 80 A TYPICAL RDS(on) = 0.0035Ω EXCEPTIONAL dv/dt CAPABILITY

STB80NF55L-08-1

Contextual Info: STP80NF55L-08 STB80NF55L-08 - STB80NF55L-08-1 N-CHANNEL 55V - 0.0065Ω - 80A - TO-220/D2PAK/I2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID STP80NF55L-08 STB80NF55L-08 STB80NF55L-08-1 55 V 55 V 55 V 0.008Ω 0.008Ω 0.008Ω 80 A

p80nf06

Abstract: JESD97 STB80NF06 STB80NF06T4 STP80NF06 STW80NF06 P80NF
Contextual Info: STP80NF06 - STB80NF06 STW80NF06 N-channel 60V - 0.0065Ω - 80A TO-220/D2PAK/TO-247 STripFET II Power MOSFET Features Type VDSS RDS on ID STB80NF06 60V <0.008Ω 80A STP80NF06 60V <0.008Ω 80A 3 1 STW80NF06 60V • 100% avalanche tested ■ Low threshold drive

STB80NF55-08

Abstract: STB80NF55-08-1 STP80NF55-08 57 -1 80 515 diode
Contextual Info: STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE STB80NF55-08/-1 STP80NF55-08 • ■ VDSS RDS on ID 55 V 55 V <0.008 Ω <0.008 Ω 80 A 80 A TYPICAL RDS(on) = 0.0065Ω LOW THRESHOLD DRIVE

STB80NF10

Contextual Info: STB80NF10 N-CHANNEL 100V - 0.012Ω - 80A D2PAK LOW GATE CHARGE STripFET POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STB80NF10 100 V < 0.015 Ω 80 A TYPICAL RDS(on) = 0.012Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED

P80NF5

Abstract: p80nf55-08 P80NF550 p80nf55 P80NF*55-08 P80NF b80nf55-08 b80nf55 P80NF5508 p80n
Contextual Info: STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET Table 1: General Features TYPE STB80NF55-08/-1 STP80NF55-08 • ■ Figure 1:Package VDSS RDS on ID 55 V 55 V <0.008 Ω <0.008 Ω 80 A

P80NF04

Abstract: STB80NF04 STB80NF04T4 STP80NF04 B80NF04
Contextual Info: STB80NF04 STP80NF04 N-CHANNEL 40V - 0.008 Ω - 80A D²PAK/TO-220 STripFET II POWER MOSFET PRELIMINARY DATA • ■ ■ ■ ■ TYPE VDSS RDS on ID STB80NF04 STP80NF04 40 V 40 V < 0.010 Ω < 0.010 Ω 80 A 80 A TYPICAL RDS(on) = 0.008 Ω EXCEPTIONAL dv/dt CAPABILITY

P80NF06

Abstract: P80NF JESD97 STB80NF06 STB80NF06T4 STP80NF06 STW80NF06
Contextual Info: STP80NF06 - STB80NF06 STW80NF06 N-channel 60V - 0.0065Ω - 80A TO-220/D2PAK/TO-247 STripFET II Power MOSFET General features Type VDSS RDS on ID STB80NF06 60V <0.010Ω 80A STP80NF06 60V <0.010Ω 80A 3 1 STW80NF06 60V • Exceptional dv/dt capability

Contextual Info: STB80NE03L-06 STB80NE03L-06-1 N-CHANNEL 30V - 0.005Ω - 80A D 2PAK / I2PAK STripFET POWER MOSFET TYPE STB80NF03L-06 STB80NF03L-06-1 • ■ ■ ■ VDSS RDS on ID 30 V 30 V < 0.006 Ω < 0.006 Ω 80 A 80 A TYPICAL RDS(on) = 0.005 Ω EXCEPTIONAL dv/dt CAPABILITY

STB80NF03L-04

Contextual Info: STB80NF03L-04  N-CHANNEL 30V - 0.0035 Ω - 80A TO-262/TO-263 STripFET POWER MOSFET PRELIMINARY DATA T YPE V DSS R DS on ID STB80NF03L-04 30 V < 0.004 Ω 80 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.0035 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED

p80nf55-08

Abstract: w80nf55-08 w80nf55 P80NF5 ST MAKE mosfet p80nf55 08 14511 p80nf55 Transistor equivalents b80nf55-08 P80NF*55-08
Contextual Info: STB80NF55-08T4 STP80NF55-08, STW80NF55-08 N-channel 55 V, 0.0065 Ω, 80 A, TO-220, D2PAK, TO-247 STripFET Power MOSFET Features • Type VDSS RDS on max ID STB80NF55-08T4 55 V < 0.008 Ω 80 A STP80NF55-08 55 V < 0.008 Ω 80 A STW80NF55-08 55 V < 0.008 Ω

80NF03

Abstract: 80NF03L 80nf 80NF03L-04 STB80NF03L-04T4
Contextual Info: STB80NF03L-04T4 N-channel 30 V, 0.0035 Ω, 80 A D2PAK STripFET II Power MOSFET Features Type VDSS RDS on max ID STB80NF03L-04T4 30 V < 0.004 Ω 80 A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low threshold drive 3 1 D²PAK Application

STP80N20M5

Abstract: 80N20M5 STB80N20M5 80N20 stb80n20
Contextual Info: STB80N20M5 STP80N20M5 N-channel 200 V, 0.019 Ω, 61 A, TO-220, D2PAK MDmesh V Power MOSFET Features Type STB80N20M5 STP80N20M5 VDSS @ TJmax RDS on max 200 V < 0.023 Ω ID 61 A 61 A 3 3 • Amongst the best RDS(on) * area ■ High dv/dt capability ■