STB8 Search Results

STB85NF55

Abstract: STP85NF55 40AVDD
Contextual Info: STB85NF55 STP85NF55 N-CHANNEL 55V - 0.0062 Ω - 80A D2PAK/TO-220 STripFET II POWER MOSFET • ■ TYPE VDSS RDS on ID STB85NF55 STP85NF55 55 V 55 V <0.008 Ω <0.008 Ω 80 A 80 A TYPICAL RDS(on) = 0.0062 Ω FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE

STB80PF55

Contextual Info: STB80PF55 P-CHANNEL 55V - 0.016 Ω - 80A D2PAK STripFET II POWER MOSFET PRELIMINARY DATA • ■ ■ ■ TYPE VDSS RDS on ID STB80PF55 55 V < 0.018 Ω 80 A TYPICAL RDS(on) = 0.016 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED

p85nf55

Abstract: B85NF55 diode 8405 8405 gc93620 STB85NF55 STI85NF55 STP85NF55 gc93640
Contextual Info: STB85NF55, STI85NF55 STP85NF55 N-channel 55 V, 0.0062 Ω, 80 A, TO-220, D2PAK, I2PAK STripFET II Power MOSFET Features Type VDSS RDS on max ID STB85NF55 55 V < 0.008 Ω 80 A STI85NF55 55 V < 0.008 Ω 80 A STP85NF55 55 V < 0.008 Ω 80 A • Exceptional dv/dt capability

8NC50

Abstract: STB8NC50-1 STP8NC50 STP8NC50FP
Contextual Info: STP8NC50 - STP8NC50FP STB8NC50-1 N-CHANNEL 500V - 0.7Ω - 8A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP(B)8NC50(-1) 500 V < 0.85 Ω 8A STP8NC50FP 500 V < 0.85 Ω 8A TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv/dt CAPABILITY

L9 Zener

Abstract: STB8NC70Z STB8NC70Z-1 STP8NC70Z STP8NC70ZFP
Contextual Info: STP8NC70Z - STP8NC70ZFP STB8NC70Z - STB8NC70Z-1 N-CHANNEL 700V - 0.90Ω - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH III MOSFET TYPE VDSS RDS on ID STP8NC70Z/FP 700V < 1.2 Ω 6.8 A STB8NC70Z/-1 700V < 1.2 Ω 6.8 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.9 Ω

B80NE03L

Abstract: JESD97 STB80NE03L-06 b80ne
Contextual Info: STB80NE03L-06 N-channel 30V - 0.005Ω - 85A - D2PAK STripFET Power MOSFET General features Type VDSS RDS on ID STB80NE03L-06 30V <0.006Ω 80A • Exceptional dv/dt capability ■ Low gate charge 100°C ■ 100% Avalanche tested 3 1 D2PAK Description

B80NE06

Abstract: B80NE06-10 b80ne
Contextual Info: STB80NE06-10 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE ST B80NE06-10 • ■ ■ ■ ■ V DSS R DS on ID 60 V <0.01 Ω 80 A TYPICAL RDS(on) = 0.0085 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED

Contextual Info: STP8NC50 - STP8NC50FP STB8NC50-1 N-CHANNEL 500V - 0.7Ω - 8A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP(B)8NC50(-1) 500 V < 0.85 Ω 8A STP8NC50FP 500 V < 0.85 Ω 8A TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv/dt CAPABILITY

JESD97

Abstract: STB85NS04ZT4
Contextual Info: STB85NS04Z STB85NS04Z-1 N-channel 11mΩ - 80A - D2PAK - I2PAK SAFeFET Power MOSFET General features Type VDSS RDS on ID STB85NS04Z Clamped < 0.015Ω 80A(1) STB85NS04Z-1 Clamped < 0.015Ω 80A(1) 1. Current limited by wire bonding 3 12 • 100% avalanche tested

STB85NF55

Abstract: STP85NF55
Contextual Info: STB85NF55 STP85NF55 N-CHANNEL 55V - 0.0062 Ω - 80A D2PAK/TO-220 STripFET II POWER MOSFET • ■ TYPE VDSS RDS on ID STB85NF55 STP85NF55 55 V 55 V <0.008 Ω <0.008 Ω 80 A 80 A TYPICAL RDS(on) = 0.0062 Ω FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE

STB80NF55-08

Abstract: 0053D
Contextual Info: STB80NF55-08 N-CHANNEL 55V - 0.0065Ω - 80A D2PAK/I2PAK STripFET POWER MOSFET TYPE STB80NF55-08 • ■ ■ ■ VDSS RDS on ID 55 V <0.008 Ω 80 A TYPICAL RDS(on) = 0.0065 Ω LOW THRESHOLD DRIVE THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX “-1”)

Contextual Info: STB80NF55L-06 N - CHANNEL 5 5 V - 0.005 Î2 -8 0 A D2PAK STripFET POWER MOSFET TYPE S T B 8 0 N F 5 5 L -0 6 • . . . V dss 55 V R d S o ii Id < 0 .0 0 6 5 Q. 80 A TYPICAL RDS(on) = 0.005 LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE ADD SUFFIX ”T4” FOR ORDERING IN TAPE

p8nm60fp

Abstract: B8NM60 D5NM60 STD5NM60-1 STB8NM60 STB8NM60T4 STD5NM60 STD5NM60T4 STP8NM60 STP8NM60FP
Contextual Info: STD5NM60 - STD5NM60-1 STB8NM60 - STP8NM60 - STP8NM60FP N-CHANNEL 650V@Tjmax - 0.9Ω - 8A - TO-220 /FP- D2/D/IPAK MDmesh Power MOSFET General features Type VDSS RDS on ID Pw STD5NM60 650V <1Ω 5A 96W 1 STD5NM60-1 650V <1Ω 5A 96W DPAK STB8NM60 650V <1Ω

STB80NF55-06

Contextual Info: STB80NF55-06  N - CHANNEL 55V - 0.005Ω - 80A TO-262/TO-263 STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STB80NF55-06 55 V < 0.0065 Ω 80 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.005 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED

80nf

Abstract: STP80NF55-06 STB80NF55-06-1 STP80NF55-06FP
Contextual Info: STP80NF55-06 - STP80NF55-06FP STB80NF55-06-1 N-CHANNEL 55V - 0.005Ω - 80A TO-220/TO-220FP/I2PAK STripFET POWER MOSFET TYPE • ■ ■ ■ ■ VDSS R DS on ID STP80NF55-06/-1 55 V <0.0065Ω 80 A STP80NF55-06FP 55 V <0.0065Ω 60 A TYPICAL RDS(on) = 0.005Ω

STB8NC50-1

Abstract: STP8NC50 STP8NC50FP
Contextual Info: STP8NC50 - STP8NC50FP STB8NC50-1 N-CHANNEL 500V - 0.7Ω - 8A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP(B)8NC50(-1) 500 V < 0.85 Ω 8A STP8NC50FP 500 V < 0.85 Ω 8A TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv/dt CAPABILITY

p80nf06

Abstract: B80NF06 max 550 transistor W80NF06 P80NF p80n
Contextual Info: STP80NF06 - STB80NF06 STW80NF06 N-CHANNEL 60V - 0.0065Ω - 80A TO-220/D2PAK/TO-247 STripFET II POWER MOSFET TYPE STB80NF06 STP80NF06 STW80NF06 • ■ ■ ■ VDSS RDS on ID 60 V 60 V 60 V < 0.010 Ω < 0.010 Ω < 0.010 Ω 80 A 80 A 80 A TYPICAL RDS(on) = 0.0065Ω

P85NF55

Contextual Info: STB85NF55L STP85NF55L N-CHANNEL 55V - 0.0060 Ω - 80A D2PAK/TO-220 STripFET II POWER MOSFET TYPE STP85NF55L STB85NF55L • ■ ■ VDSS RDS on ID 55 V 55 V <0.008 Ω <0.008 Ω 80 A 80 A TYPICAL RDS(on) = 0.0060 Ω LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE

B85NF55

Abstract: p85nf55
Contextual Info: STB85NF55 STP85NF55 N-CHANNEL 55V - 0.0062 Ω - 80A D2PAK/TO-220 STripFET II POWER MOSFET • ■ TYPE VDSS RDS on ID STB85NF55 STP85NF55 55 V 55 V <0.008 Ω <0.008 Ω 80 A 80 A TYPICAL RDS(on) = 0.0062 Ω FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE

p80nf10

Abstract: b80nf10 P80NF-10
Contextual Info: STP80NF10 STB80NF10 N-CHANNEL 100V - 0.012Ω - 80A - TO-220/D2PAK LOW GATE CHARGE STripFET II MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID STB80NF10 STP80NF10 100 V 100 V < 0.015 Ω < 0.015 Ω 80 A 80 A • ■ ■ ■ TYPICAL RDS(on) = 0.012Ω

P80NF10

Abstract: P80NF b80nf1 b80nf10 P80NF-10
Contextual Info: STB80NF10 STP80NF10 N-channel 100V - 0.012Ω - 80A - TO-220 / D2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID(1) STP80NF10 100V <0.015Ω 80A STB80NF10 100V <0.015Ω 80A • Exceptional dv/dt capability ■ 100% Avalanche tested

80NF03

Abstract: 80NF03L 80nf03l-04 STP80NF03L-04
Contextual Info: STP80NF03L-04 STB80NF03L-04 STB80NF03L-04-1 N-CHANNEL 30V - 0.0035 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE STB80NF03L-04/-1 STP80NF03L-04 • ■ ■ ■ VDSS R DS on ID 30 V 30 V <0.004 Ω <0.004 Ω 80 A 80 A TYPICAL RDS(on) = 0.0035Ω

Contextual Info: STB85NF55 STP85NF55 N-CHANNEL 55V - 0.0062 Ω - 80A D2PAK/TO-220 STripFET II POWER MOSFET • ■ TYPE VDSS RDS on ID STB85NF55 STP85NF55 55 V 55 V <0.008 Ω <0.008 Ω 80 A 80 A TYPICAL RDS(on) = 0.0062 Ω FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE

STP80NF03L-04

Contextual Info: STB80NF03L-04-1 STP80NF03L-04 N-CHANNEL 30V - 0.0035Ω - 80A I2PAK/TO-220 STripFET POWER MOSFET • ■ ■ ■ TYPE VDSS R DS on ID STB80NF03L-04-1 STP80NF03L-04 30 V 30 V <0.004 Ω <0.004 Ω 80 A 80 A TYPICAL RDS(on) = 0.0035Ω EXCEPTIONAL dv/dt CAPABILITY