STB50 Search Results

Contextual Info: S G S -1H 0M S 0N IMOigœiILliera *® STB50NE08 N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE ” POWER MOSFET TYPE STB50NE08 V dss R D S on Id 80 V < 0 .0 2 4 Q. 50 A . . TYPICAL RDS(on) =0.020 EXCEPTIONAL dv/dt CAPABILITY . 100% AVALANCHE TESTED

Contextual Info: STB50N25M5 N-channel 250 V, 0.065 Ω, 28 A, MDmesh V Power MOSFET in D²PAK package Datasheet — production data Features Type VDSS RDS on max ID STB50N25M5 250 V < 0.075 Ω 28 A • Amongst the best RDS(on)* area ■ High dv/dt capability ■ Excellent switching performance

50NF25

Abstract: mosfet 45a 200v JESD97 STB50NF25 STP50NF25
Contextual Info: STB50NF25 STP50NF25 N-channel 250V - 0.055Ω - 45A - D2PAK - TO-220 Low gate charge STripFET Power MOSFET PRELIMINARY DATA Features Type VDSS RDS on ID Pw STP50NF25 250V <0.069Ω 45A 160W STB50NF25 250V <0.069Ω 45A 160W • 100% avalanche tested ■

STB50NE10

Contextual Info: STB50NE10 N-CHANNEL 100V - 0.021 Ω - 50A D2PAK STripFET POWER MOSFET • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STB50NE10 100 V <0.027 Ω 50 A TYPICAL RDS(on) = 0.021 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC

power window motor 12v

Abstract: wiper motor 12v dc PWM generator for IGBT 12v dc driver motor control mosfet ELECTRONIC BALLAST 12v window lift motor rain sensor "rain sensor" 12v dc motor igbt control motor power window hall sensor
Contextual Info: HIGH INTENSITY DISCHARGE H.I.D. LAMPS 100V Power MOSFET: STB50NE10 4 High voltage (breakdown at 500V) power transistor. Switch selection: IGBT: STGD3NB60SD Power MOSFET: STB9NB50 DC/DC Converter 12V 70V 12V B.C.C. 450 Hz / 50% duty cicle Transformer + Clamping

Contextual Info: STB50NE10 N - CHANNEL 100V - 0.021 Q - 50A - D^PAK STripFET POWER MOSFET PRELIMINARY DATA TYPE STB50NE10 Voss R D S o n Id 100 V < 0 .0 2 7 Î2 50 A . TYPICAL R d s ( o ii ) = 0.021 Q m EXCEPTIONAL dv/dt CAPABILITY . . . . 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 °C

STB50NE10

Contextual Info: STB50NE10 N-CHANNEL 100V - 0.021 Ω - 50A D2PAK STripFET POWER MOSFET • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID STB50NE10 100 V <0.027 Ω 50 A TYPICAL RDS(on) = 0.021 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC

STB50NE08

Abstract: airbag
Contextual Info: STB50NE08 N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE " POWER MOSFET TYPE STB50NE08 • ■ ■ ■ ■ ■ V DSS R DS on ID 80 V <0.024 Ω 50 A TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC

b50ne10

Abstract: B50NE1 STB50NE10T4 B50N JESD97 STB50NE10
Contextual Info: STB50NE10 N-channel 100V - 0.021Ω - 50A - D2PAK STripFET Power MOSFET General features Type VDSS RDS on ID STB50NE10 100V <0.027Ω 50A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge at 100 °C ■ Application oriented characterization

Contextual Info: STB50NH02L N-CHANNEL 20V - 0.011 Ω - 50A D PAK STripFET III POWER MOSFET PRELIMINARY DATA TYPE STB50NH02L • ■ ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.0135 Ω 50 A TYPICAL RDS(on) = 0.011 Ω @ 10 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED

STB50NE10L

Contextual Info: STB50NE10L N - CHANNEL 100V - 0.020Ω - 50A - D2PAK STripFET POWER MOSFET PRELIMINARY DATA TYPE STB50NE10L • ■ ■ ■ ■ ■ V DSS R DS on ID 100 V <0.025 Ω 50 A TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED

B50NE10

Abstract: STB50NE10T4 JESD97 STB50NE10 47S25
Contextual Info: STB50NE10 N-channel 100V - 0.021Ω - 50A - D2PAK STripFET Power MOSFET General features Type VDSS RDS on ID STB50NE10 100V <0.027Ω 50A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Low gate charge at 100 °C ■ Application oriented characterization

STB50NE10

Contextual Info: STB50NE10  N - CHANNEL 100V - 0.021Ω - 50A - D2PAK STripFET POWER MOSFET TYPE STB50NE10 • ■ ■ ■ ■ ■ V DSS R DS on ID 100 V <0.027 Ω 50 A TYPICAL RDS(on) = 0.021 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC

Contextual Info: STB50NE10L N-CHANNEL 100V - 0.020 Ω - 50A D2PAK STripFET POWER MOSFET TYPE STB50NE10L • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.025 Ω 50 A TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC

STB50N25M5

Abstract: 50N25M5 350mJ
Contextual Info: STB50N25M5 N-channel 250 V, 0.055 Ω, 28 A, D2PAK MDmesh V Power MOSFET Features Type VDSS RDS on max ID STB50N25M5 250 V < 0.065 Ω 28 A • Amongst the best RDS(on)* area ■ High dv/dt capability ■ Excellent switching performance ■ Easy to drive

STB50NE10L

Abstract: 0315E airbag
Contextual Info: STB50NE10L N-CHANNEL 100V - 0.020 Ω - 50A D2PAK STripFET POWER MOSFET TYPE STB50NE10L • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.025 Ω 50 A TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC

STB50NH02LT4

Abstract: STB50NH02L B50N
Contextual Info: STB50NH02L N-CHANNEL 24V - 0.011 Ω - 50A D²PAK STripFET III POWER MOSFET TYPE STB50NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.0135 Ω 50 A TYPICAL RDS(on) = 0.011 Ω @ 10 V TYPICAL RDS(on) = 0.015 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

STB50NH02L

Contextual Info: STB50NH02L N-CHANNEL 24V - 0.011 Ω - 50A D²PAK STripFET III POWER MOSFET TYPE STB50NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.0135 Ω 50 A TYPICAL RDS(on) = 0.011 Ω @ 10 V TYPICAL RDS(on) = 0.015 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

Contextual Info: STB50NH02L N-CHANNEL 24V - 0.011 Ω - 50A D²PAK STripFET III POWER MOSFET TYPE STB50NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.0135 Ω 50 A TYPICAL RDS(on) = 0.011 Ω @ 10 V TYPICAL RDS(on) = 0.015 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

Contextual Info: STB50NE08 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE ST B50NE08 • ■ ■ ■ ■ ■ V DSS R DS on ID 80 V <0.024 Ω 50 A TYPICAL RDS(on) = 0.020 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC

STB50NH02L

Abstract: STB50NH02LT4
Contextual Info: STB50NH02L N-CHANNEL 24V - 0.011 Ω - 50A D²PAK STripFET III POWER MOSFET TYPE STB50NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.0135 Ω 50 A TYPICAL RDS(on) = 0.011 Ω @ 10 V TYPICAL RDS(on) = 0.015 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

Contextual Info: STB50NE10 N - CHANNEL 100V - 0.021Î2 - 50A - D2PAK STripFET POWER MOSFET TYPE S T B 50 N E 1 0 V dss 100 V R D S o n Id < 0 .0 2 7 Q. 50 A . . . . . TYPICAL R D S (o n ) = 0.021 £2 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 °C

Contextual Info: STB50NE10 N - CHANNEL 100V - 0.021 £2 - 50A - D^PAK _ STripFET POWER MOSFET PRELIM IN ARY DATA TYPE S T B 50N E 10 V dss RDS on Id 100 V <0.027 a 50 A . TYPICAL RDs(on) = 0.021 £2 . EXCEPTIONAL dv/dt CAPABILITY . 100% AVALANCHE TESTED . LOW GATE CHARGE AT 100°C

50n25

Contextual Info: STB50N25M5 N-channel 250 V, 0.065 Ω, 28 A, MDmesh V Power MOSFET in D²PAK package Datasheet — production data Features Type VDSS RDS on max ID STB50N25M5 250 V < 0.075 Ω 28 A • Amongst the best RDS(on)* area ■ High dv/dt capability ■ Excellent switching performance